MOSFET VGS 1.2V VDS 5V Search Results

A1767

Abstract: MCH3481
Contextual Info: MCH3481 Ordering number : ENA1767 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3481 Low Votage Drive Switching Device Applications Features • • ON-resistance RDS on 1=80mΩ (typ.) Halogen free compliance • • 1.2V drive Protection diode in

A1766

Contextual Info: MCH3382 Ordering number : ENA1766 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3382 Low Votage Drive Switching Device Applications Features • • • ON-resistance RDS on 1=152mΩ (typ.) 1.2V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block copackages two pairs of high performance control and synchronous MOSFETs and is ideal for use in highdensity two-phase synchronous buck converters. It is optimized internally for PCB layout, heat transfer and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3310 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3310 is a P-channel enhancement mode Power MOSFET. The UTC UT3310 uses advanced technology to provide customers with fast switching, low on-resistance and

SOT963

Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0mΩ @ VGS= 4.5V 240mA 6.0mΩ @ VGS= 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

20C1D

Abstract: GP2030S
Contextual Info: Pb Free Plating Product ISSUED DATE :2005/08/10 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 60m N-CH ID 2.6A P-CH BVDSS -20V N-CH RDS(ON) 80m N-CH ID -2.3A GP2030S N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low

CSD86330

Abstract: SLPS264C
Contextual Info: CSD86330Q3D SLPS264C – OCTOBER 2010 – REVISED OCTOBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • The CSD86330Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

IXTH16N10D2

Abstract: depletion mode mosfet 16N10D2 T16N1 ixtt16N10D2 DS100258A
Contextual Info: Preliminary Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: WTK9431 DRAIN SOURCE VOLTAGE 6 5 D 4 G -3.5 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -20 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<130mΩ@V GS = -4.5V * RDS(ON)<180mΩ@V GS = -2.5V

GTC9926E

Abstract: GTS9926E 1225B
Contextual Info: ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTS9926E BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 4.6A Description The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

1225B

Abstract: GTC9926E GTC9926
Contextual Info: ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTC9926E BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 28m 4.6A Description The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

GTC220E

Contextual Info: ISSUED DATE :2006/09/13 REVISED DATE : GTC220E BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 30m 5A Description The GTC220E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

GC2301

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/05/24 REVISED DATE : GC2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID -20V 130m -2.6A Description The GC2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

GM2301

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE : GM2301 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 130m -2.6A Description The GM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

WTC2302

Contextual Info: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive

GI9912

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/01/31 REVISED DATE : GI9912 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 85m 10A Description The GI9912 provide the designer with the best combination of fast switching, ruggedized device design, low

GJ3310

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GJ3310 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 150m -10A Description The GJ3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Contextual Info: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3.2 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive

GSS4936

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/10/31 REVISED DATE : GSS4936 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 37m 5.8A Description The GSS4936 provide the designer with the best combination of fast switching, ruggedized device design, ultra

GM2501

Abstract: p-channel mosfet sot89 5V
Contextual Info: Pb Free Plating Product ISSUED DATE :2005/12/16 REVISED DATE : GM2501 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 200m -2.6A Description The GM2501 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Contextual Info: MIC94030/94031 TinyFET P-Channel MOSFET General Description Features The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is

GSC9620

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/04/20 REVISED DATE : GSC9620 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 20m -9.5A Description The GSC9620 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: Ordering number : ENA1353B MCH3478 N-Channel Power MOSFET http://onsemi.com 30V, 2A, 165mΩ, Single MCPH3 Features • • • Low ON-resistance 1.8V drive Protection diode in • • Ultrahigh speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents