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    MOSFET TRANSISTORS LOW VOLTAGE Search Results

    MOSFET TRANSISTORS LOW VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPL226R0G5D
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    NFMJMPC156R0G3D
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    NFM31PC276D0E3L
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    MG800FXF1JMS3
    Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Datasheet
    TK5R1A08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet

    MOSFET TRANSISTORS LOW VOLTAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: US6J2 Transistors 2.5V Drive Pch+Pch MOSFET US6J2 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.


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    Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).


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    EM6M1

    Abstract: MOSFET IGSS 100A
    Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).


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    Contextual Info: 1.5V Drive Pch+Pch MOSFET QS6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (1.5V).


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    QS6J11 R0039A PDF

    TUMT6

    Abstract: RZL025P01 12a50
    Contextual Info: RZL025P01 Transistors 1.5V Drive Pch MOSFET RZL025P01 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YC zApplication Switching


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    RZL025P01 TUMT6 RZL025P01 12a50 PDF

    Contextual Info: RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). zApplications


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    RUL035N02 PDF

    Contextual Info: RUL035N02 Transistors 2.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). zApplications


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    RUL035N02 RUL035N02 PDF

    tumt3

    Abstract: Z diode RTF025N03
    Contextual Info: RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate


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    RTF025N03 tumt3 Z diode RTF025N03 PDF

    RUF015N02

    Abstract: tumt3
    Contextual Info: RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate


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    RUF015N02 RUF015N02 tumt3 PDF

    RUF025N02

    Contextual Info: RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate


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    RUF025N02 RUF025N02 PDF

    AYWW marking code IC

    Abstract: NUS3116MT NUS3116MTR2G OF BJT 547
    Contextual Info: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


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    NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547 PDF

    NUS3116MT

    Contextual Info: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


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    NUS3116MT NUS3116MT/D NUS3116MT PDF

    Contextual Info: RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Silicon N-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM


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    RTL035N03 PDF

    TUMT6

    Abstract: Rl86 n-channel 2.5v mosfet Z diode RTL035N03
    Contextual Info: RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM


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    RTL035N03 TUMT6 Rl86 n-channel 2.5v mosfet Z diode RTL035N03 PDF

    Contextual Info: 1.5V Drive Pch+Pch MOSFET US6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (1.5V) makes this device


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    US6J11 R0039A PDF

    RTF010P02

    Contextual Info: RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate


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    RTF010P02 RTF010P02 PDF

    RTF020P02

    Contextual Info: RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (120mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate


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    RTF020P02 RTF020P02 PDF

    Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


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    TUMT6

    Abstract: us6k Z diode
    Contextual Info: US6K1 Transistors 2.5V Drive Nch+Nch MOSFET US6K1 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : K01


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    Contextual Info: RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source


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    RTF025N03 PDF

    20V P-Channel Power MOSFET

    Abstract: US6M2
    Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


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    RTF015P02

    Contextual Info: RTF015P02 Transistors 2.5V Drive Pch MOSFET RTF015P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (180mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate


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    RTF015P02 RTF015P02 PDF

    Contextual Info: RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate


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    RTF010P02 R1102A PDF

    Contextual Info: RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate (2) Source


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    RUF015N02 PDF