MOSFET TRANSISTORS LOW VOLTAGE Search Results
MOSFET TRANSISTORS LOW VOLTAGE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
MG800FXF1JMS3 |
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET | Datasheet | ||
TK5R1A08QM |
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MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS | Datasheet |
MOSFET TRANSISTORS LOW VOLTAGE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: US6J2 Transistors 2.5V Drive Pch+Pch MOSFET US6J2 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. |
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Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive). |
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EM6M1
Abstract: MOSFET IGSS 100A
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Contextual Info: 1.5V Drive Pch+Pch MOSFET QS6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (1.5V). |
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QS6J11 R0039A | |
TUMT6
Abstract: RZL025P01 12a50
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RZL025P01 TUMT6 RZL025P01 12a50 | |
Contextual Info: RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). zApplications |
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RUL035N02 | |
Contextual Info: RUL035N02 Transistors 2.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). zApplications |
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RUL035N02 RUL035N02 | |
tumt3
Abstract: Z diode RTF025N03
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RTF025N03 tumt3 Z diode RTF025N03 | |
RUF015N02
Abstract: tumt3
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RUF015N02 RUF015N02 tumt3 | |
RUF025N02Contextual Info: RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate |
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RUF025N02 RUF025N02 | |
AYWW marking code IC
Abstract: NUS3116MT NUS3116MTR2G OF BJT 547
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NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547 | |
NUS3116MTContextual Info: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and |
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NUS3116MT NUS3116MT/D NUS3116MT | |
Contextual Info: RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Silicon N-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM |
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RTL035N03 | |
TUMT6
Abstract: Rl86 n-channel 2.5v mosfet Z diode RTL035N03
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RTL035N03 TUMT6 Rl86 n-channel 2.5v mosfet Z diode RTL035N03 | |
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Contextual Info: 1.5V Drive Pch+Pch MOSFET US6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (1.5V) makes this device |
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US6J11 R0039A | |
RTF010P02Contextual Info: RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate |
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RTF010P02 RTF010P02 | |
RTF020P02Contextual Info: RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (120mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate |
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RTF020P02 RTF020P02 | |
Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. |
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TUMT6
Abstract: us6k Z diode
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Contextual Info: RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source |
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RTF025N03 | |
20V P-Channel Power MOSFET
Abstract: US6M2
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RTF015P02Contextual Info: RTF015P02 Transistors 2.5V Drive Pch MOSFET RTF015P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (180mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate |
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RTF015P02 RTF015P02 | |
Contextual Info: RTF010P02 Transistors 2.5V Drive Pch MOSFET RTF010P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Gate |
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RTF010P02 R1102A | |
Contextual Info: RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate (2) Source |
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RUF015N02 |