MOSFET TEST Search Results

210T2S

Contextual Info: GU PhotoMOS AQS210TS, 210T2S TESTING GU PhotoMOS (AQS210TS, 210T2S) 3-channel (MOSFET & 2 optocoupler) or (2 MOSFET & optocoupler) SOP 16-pin type. 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type

AN002

Abstract: "curve tracer" ZERO VOLTAGE SWITCH
Contextual Info: SYNC POWER CORP. Technical Review of N-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN002 1 Measuring N-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3

power BJT PNP

Abstract: BJT pnp 45V vertical mosfet
Contextual Info: SYNC POWER CORP. Technical Review of P-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN001 1 Measuring P-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3

rf power mosfet

Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Contextual Info: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings

Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).

EM6M1

Abstract: MOSFET IGSS 100A
Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).

IXZ316N60

Abstract: mosfet 50V
Contextual Info: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V

IXZ308N120

Abstract: ixzh ixzh08n120
Contextual Info: IXZH08N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200

ixzr08n120a

Contextual Info: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on

IXZ318N50

Contextual Info: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V

"RF MOSFETs"

Abstract: 1 RF s 640 a 931 "RF MOSFET" transistor tl 187 IXZ308N120 ixzr08n120a IXYS RF IXZR08N120 5-486 731 MOSFET
Contextual Info: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

ixzr18n50

Contextual Info: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on

Relay Matsua 12 volt

Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch

AQS210T2S

Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ
Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch

AQS210T2S

Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ
Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch

IXZ318N50

Contextual Info: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on ≤ 0.34 Ω VDSS

Contextual Info: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOT Plust Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V

Si4837DY

Abstract: Si4837DY-T1
Contextual Info: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V

AQS210T2S

Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ
Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch

10BQ040

Abstract: EIA-541 IRF7807V MS-012AA
Contextual Info: PD-94018A IRF7807V • • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented

AQS210T2S

Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ
Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch

Si4837DY

Abstract: Si4837DY-T1
Contextual Info: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V

IXZ211N50

Abstract: IXZ2211N50 DSAE0059430
Contextual Info: IXZ2211N50 Z-MOS RF Power MOSFET Dual N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings Per Device VDSS TJ = 25°C to 150°C

FDD8N50NZ

Abstract: FDD8N50 FDD8N50NZTM
Contextual Info: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and