MOSFET SSF1010 Search Results

MOSFET SSF1010 Result Highlights (5)

Part	Manufacturer	Description	Download
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet

MOSFET SSF1010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Mosfet Abstract: SSF1010 Contextual Info: SSF1010 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 9.5mohm(typ.) ID 100A TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and	Original	SSF1010 O-220 Mosfet SSF1010	PDF
Mosfet ssf1010 Abstract: p channel mosfet 100v 100V 60A Mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V SSF1010 Advanced Power Technology Avalanche Energy Contextual Info: SSF1010 Feathers: ID =130A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=7.5mΩ Typ.） Fully characterized avalanche voltage and current Description: The SSF1010 is a new generation of high voltage and low current N–Channel enhancement mode trench power	Original	SSF1010 SSF1010 T0-220) 30rcuit: O-220 Mosfet ssf1010 p channel mosfet 100v 100V 60A Mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V Advanced Power Technology Avalanche Energy	PDF

Catalog Datasheet

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Mosfet

Abstract: SSF1010
Contextual Info: SSF1010 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 9.5mohm(typ.) ID 100A TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and

Original

SSF1010 O-220 Mosfet SSF1010

PDF

Mosfet ssf1010

Abstract: p channel mosfet 100v 100V 60A Mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V SSF1010 Advanced Power Technology Avalanche Energy
Contextual Info: SSF1010 Feathers: ID =130A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=7.5mΩ Typ.） Fully characterized avalanche voltage and current Description: The SSF1010 is a new generation of high voltage and low current N–Channel enhancement mode trench power

Original

SSF1010 SSF1010 T0-220) 30rcuit: O-220 Mosfet ssf1010 p channel mosfet 100v 100V 60A Mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V Advanced Power Technology Avalanche Energy

PDF