MOSFET SBT Search Results
MOSFET SBT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
TCK424G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
![]() |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
MOSFET SBT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
relay array driver
Abstract: Photovoltaic mosfet driver photovoltaic driver
|
OCR Scan |
LH1262BB/BAC LH1262BB/BAC fiS3b32b LH1262BB LH1262BAC 1000-piece fl23b32fc. relay array driver Photovoltaic mosfet driver photovoltaic driver | |
irfip250
Abstract: rectifier 802
|
OCR Scan |
001531b IRFIP250 O-247 rectifier 802 | |
FILM CAPACITOR 0.1/10/100
Abstract: kze capacitor matsushita film capacitor ECQ 10s100 switching regulator 12v sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor Nippon Chemi-Con kze capacitor
|
Original |
TN5D51A ENA1031 A1031-11/11 FILM CAPACITOR 0.1/10/100 kze capacitor matsushita film capacitor ECQ 10s100 switching regulator 12v sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor Nippon Chemi-Con kze capacitor | |
Contextual Info: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). |
Original |
TN5D41A ENA1029 A1029-11/11 | |
HK-12S120-1010
Abstract: kze capacitor HK-12S120 A1060-11 A1060 thyristor control circuit diagram variable capacitor A106011
|
Original |
TN8D41A ENA1060 A1060-11/11 HK-12S120-1010 kze capacitor HK-12S120 A1060-11 A1060 thyristor control circuit diagram variable capacitor A106011 | |
A1029
Abstract: kze capacitor sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor
|
Original |
TN5D41A ENA1029 A1029-11/11 A1029 kze capacitor sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor | |
Contextual Info: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET). |
Original |
TN8D51A ENA0985 A0985-11/11 | |
tn8d51a
Abstract: HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326
|
Original |
TN8D51A ENA0985 A0985-11/11 tn8d51a HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326 | |
kze capacitor
Abstract: thyristor 5a THYRISTOR PRODUCT CATALOG TN5D61A FILM CAPACITOR 0.1/10/100 sanyo electrolytic capacitor Schottky Diode 40V 5A thyristor control circuit diagram
|
Original |
TN5D61A ENA1240 A1240-11/11 kze capacitor thyristor 5a THYRISTOR PRODUCT CATALOG TN5D61A FILM CAPACITOR 0.1/10/100 sanyo electrolytic capacitor Schottky Diode 40V 5A thyristor control circuit diagram | |
matsushita resistor networkContextual Info: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (Variable Output Type) TN5D01A Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). |
Original |
TN5D01A ENA1446 A1446-11/11 matsushita resistor network | |
Contextual Info: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). |
Original |
TN5D51A ENA1031 A1031-11/11 | |
Contextual Info: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). |
Original |
TN5D41A ENA1029 A1029-11/11 | |
matsushita resistor networkContextual Info: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN5D01A Separately-Excited Step-Down Switching Regulator (Variable Output Type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). |
Original |
TN5D01A ENA1446 A1446-11/11 matsushita resistor network | |
kze capacitor
Abstract: ELECTROLYTIC capacitor 3000 barrier network fuse Chemi-Con KZE thyristor regulator matsushita resistor network
|
Original |
TN5D01A ENA1446 A1446-11/11 kze capacitor ELECTROLYTIC capacitor 3000 barrier network fuse Chemi-Con KZE thyristor regulator matsushita resistor network | |
|
|||
717 MOSFET
Abstract: bvn mosfet MOSFET SBT
|
OCR Scan |
IRLW/I640A 134fi 71b4142 717 MOSFET bvn mosfet MOSFET SBT | |
Contextual Info: htemational ^Rectifier PD -9.1227 IRFD420 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V qss = 500V ^ D S o n = 3 - 0 ^ |
OCR Scan |
IRFD420 S54S2 | |
Contextual Info: International j “R Rectifier HEXFET Power MOSFET • • • • • • • " MÔSS4S5 üül4ô3b 03T • INR ru-s.»io IRF9520S INTERNATIONAL RECTIFIER LSE D Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel |
OCR Scan |
IRF9520S SMD-220 | |
Contextual Info: International Bag Rectifier HEXFET Power MOSFET • • • • • • 465S45S 001S2b2 b22 ■ INR PD-9.854 IRFIBE30G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating |
OCR Scan |
465S45S 001S2b2 IRFIBE30G O-220 | |
Contextual Info: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T his P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize |
OCR Scan |
FDS6675 | |
Contextual Info: l e l u o m Semiconductor, Inc. TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current ver sions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428 |
OCR Scan |
TC4423 TC4424 TC4425 TC4423/4424/4425 TC4426/4427/4428 TC426/427/428 TC4423/ 6T17bD2 | |
10S100
Abstract: HK-10S100-1010 2wl1 mosfet protect power mosfet 5a 20v
|
Original |
TN5D01A A1446-8/10 A1446-9/10 3000F A1446-10/10 10S100 HK-10S100-1010 2wl1 mosfet protect power mosfet 5a 20v | |
A1029
Abstract: mosfet 452 TC-00001253
|
Original |
TN5D41A 22708IQ TC-00001253 A1029-1/10 IT12635 IT12636 A1029-8/10 A1029 mosfet 452 | |
A1060
Abstract: A8AI A1060-10 A10602 R312
|
Original |
TN8D41A O2908IQ TC-00001657 A1060-1/10 IT13345 IT13346 A1060-8/10 A1060 A8AI A1060-10 A10602 R312 | |
HK-12S120-1010
Abstract: tn8d51a 4 FB TN8D51 IT1326
|
Original |
TN8D51A 90308IQ TC-00001590 A0985-1/10 IT12701 IT12702 A0985-8/10 HK-12S120-1010 tn8d51a 4 FB TN8D51 IT1326 |