MOSFET POPWER Search Results

MOSFET POPWER Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TCK424G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet
TCK420G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK425G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet

MOSFET POPWER Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UF2805B Abstract: 1000 MHz transistor 5W Contextual Info: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	UF2805B UF2805B 1000 MHz transistor 5W	PDF
UF2840P Contextual Info: UF2840P RF Power MOSFET Transistor 40W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	UF2840P UF2840P	PDF
Contextual Info: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	UF28100M 25-j1	PDF
UF28100M Abstract: UF28100 transistor 200mhz 100w Contextual Info: UF28100M RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	UF28100M UF28100M UF28100 transistor 200mhz 100w	PDF
UF2820P Contextual Info: UF2820P RF Power MOSFET Transistor 20W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	UF2820P UF2820P	PDF
UF28100H Contextual Info: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	UF28100H 25-j1 UF28100H	PDF
UF2815B Abstract: k 815 MOSFET Contextual Info: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	UF2815B UF2815B k 815 MOSFET	PDF
UF28100H Abstract: 75J10 power supply 100w UF28100 transistor 200mhz 100w Contextual Info: UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Features • • • • • • PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	UF28100H UF28100H 75J10 power supply 100w UF28100 transistor 200mhz 100w	PDF
Contextual Info: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	UF2815B	PDF
Contextual Info: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices	Original	UF28100V 25-j1	PDF
UF28100V Abstract: UF28100 mosfet popwer Contextual Info: UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices	Original	UF28100V UF28100V UF28100 mosfet popwer	PDF
UF2805B Contextual Info: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Released; RoHS Compliant 20 Jan 11 Package Outline Features •      N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration	Original	UF2805B UF2805B	PDF