MOSFET P55 Search Results

55NF06

Abstract: P55NF06 P55nf*06 Mosfet P55NF06
Contextual Info: 55NF06 Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low

ELM34804AA

Contextual Info: 双 N 沟道 MOSFET ELM34804AA-N •概要 ■特点 ELM34804AA-N 是 N 沟道低输入电容低工作电压、 •Vds=60V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=4.5A ·Rds on < 55mΩ (Vgs=10V) ·Rds(on) < 75mΩ (Vgs=4.5V) ■绝对最大额定值

ELM34405AA

Contextual Info: 单 P 沟道 MOSFET ELM34405AA-N •概要 ■特点 ELM34405AA-N 是 P 沟道低输入电容，低工作电 •Vds=-40V 压，低导通电阻的大电流 MOSFET。 ·Id=-5.5A ·Rds on < 55mΩ (Vgs=-10V) ·Rds(on) < 94mΩ (Vgs=-4.5V) ■绝对最大额定值

ELM32403LA

Contextual Info: 单 P 沟道 MOSFET ELM32403LA-S •概要 ■特点 ELM32403LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-40V ·Id=-8A ·Rds on < 55mΩ (Vgs=-10V) ·Rds(on) < 94mΩ (Vgs=-4.5V) ■绝对最大额定值

ELM34404AA

Contextual Info: 单 N 沟道 MOSFET ELM34404AA-N •概要 ■特点 ELM34404AA-N 是 N 沟道低输入电容，低工作电压， •Vds=60V 低导通电阻的大电流 MOSFET。 ·Id=5.5A ·Rds on < 55mΩ (Vgs=10V) ·Rds(on) < 75mΩ (Vgs=4.5V) ■绝对最大额定值 项目

Contextual Info: デュアルパワー N チャンネル MOSFET ELM34804AA-N •概要 ■特長 ELM34804AA-N は低入力容量 低電圧駆動、 低 オン抵抗という特性を備えた大電流デュアルパワー ・ Vds=60V ・ Id=4.5A MOSFET です。 ・ Rds on < 55mΩ (Vgs=10V)

STP55NE06

Abstract: P55NE06 P55NE morocco P55NE06 p55ne0 P55NE06FP STP55NE06FP
Contextual Info: STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID ST P55NE06 ST P55NE06FP 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY

mother board intel block diagram

Abstract: PC MOTHERBOARD ibm rev 1.2 US2075 US2075CM IRL3103S IRL3303 P54C P55C US2075CT pc MOTHERBOARD intel circuit diagram
Contextual Info: US2075 PWM SWITCHER CONTROLLER & 7.5A LOW DROPOUT REGULATOR COMBO PATENT PENDING FEATURES DESCRIPTION The US2075 eliminates the need for a seperate switching controller IC Minimum part count allows lower system cost Fixed 3.30V/7.5A LDO on board On board MOSFET driver

P55 MOSFET

Abstract: MIC94062BC6 MIC94062YC6 MIC94060BC6 MIC94063YMT MIC94060YC6 MIC94061YC6 MIC94061YMT free pdf download P55 MOSFET MIC94060
Contextual Info: MIC94060/61/62/63 High Side Power Switches General Description Features The MIC94060-63 are high-side load switches designed for operation between 1.7V to 5.5V. The devices contain a low on-resistance P-channel MOSFET that supports over 2A of continuous current. The MIC94061and

STB55NF06

Abstract: p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp
Contextual Info: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB55NF06 60V <0.018Ω 50A STB55NF06-1 60V <0.018Ω 50A STP55NF06 60V <0.018Ω

Contextual Info: MIC94060/61/62/63 High Side Power Switches General Description Features The MIC94060-63 are high-side load switches designed for operation between 1.7V to 5.5V. The devices contain a low on-resistance P-channel MOSFET that supports over 2A of continuous current. The MIC94061and

P55 MOSFET

Abstract: MIC94060YML marking P55 free pdf download P55 MOSFET MIC94060 MIC94060BC6 MIC94061 MIC94061BC6 MIC94063
Contextual Info: MIC94060/61/62/63 High Side Power Switches General Description The MIC94060-63 are high-side load switches designed for operation between 1.7V to 5.5V. The devices contain a low on-resistance P-channel MOSFET that supports over 2A of continuous current. The MIC94061and

P55NF06

Abstract: p55nf06fp P55nf*06 for p55nf06 b55nf
Contextual Info: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-CHANNEL 60V -0.015Ω - 50A TO-220/FP/D²/I²PAK STripFET II MOSFET Table 1: General Features TYPE VDSS STB55NF06 STB55NF06-1 STP55NF06FP STP55NF06 60 V 60 V 60 V 60 V Figure 1: Package RDS on <0.018 <0.018

p5506hvg

Contextual Info: Dual N-channel MOSFET ELM34804AA-N •General description ■Features ELM34804AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=4.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)

Contextual Info: Single N-channel MOSFET ELM34404AA-N •General description ■Features ELM34404AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=5.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)

Contextual Info: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)

P5504EDG

Contextual Info: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)

transistor 123 DL

Contextual Info: Single P-channel MOSFET ELM34405AA-N •General description ■Features ELM34405AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-5.5A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)

p55nf06

Abstract: Mosfet P55NF06 B55NF06 P55NF06FP for p55nf06 OF P55NF06 "p55nf06" P55nf06 MOSFET P55nf b55nf
Contextual Info: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-CHANNEL 60V -0.015Ω - 50A TO-220/FP/D²/I²PAK STripFET II MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STB55NF06 STB55NF06-1 STP55NF06FP STP55NF06 60V 60V 60V 60V <0.018Ω <0.018Ω

P5506BDG

Contextual Info: Single N-channel MOSFET ELM32400LA-S •General description ■Features ELM32400LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=10A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)

Contextual Info: Dual N-channel MOSFET ELM34804AA-N •General description ■Features ELM34804AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=4.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)

free P55 MOSFET

Abstract: P55 MOSFET free pdf download P55 MOSFET MIC94061YMT marking P55 transistor MIC94060BC6 MIC94060YC6 MIC94060YMt MIC94062BC6 MIC94061YC6
Contextual Info: MIC94060/61/62/63 High Side Power Switches General Description Features The MIC94060-63 are high-side load switches designed for operation between 1.7V to 5.5V. The devices contain a low on-resistance P-channel MOSFET that supports over 2A of continuous current. The MIC94061 and

p5504

Contextual Info: Single P-channel MOSFET ELM34405AA-N •General description ■Features ELM34405AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-5.5A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)

P55NE

Abstract: p55ne0 P55NE06 P55NE06FP STP55NE06 P55n STP55NE06FP C3921 stp55ne
Contextual Info: STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 Ω - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP55NE06 60 V < 0.022 Ω 55 A STP55NE06FP 60 V < 0.022 Ω 30 A FEATURES SUMMARY