MOSFET P-CHANNEL 2A Search Results
MOSFET P-CHANNEL 2A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TK5R1A08QM |
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MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS | Datasheet | ||
| TK155E65Z |
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N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ | Datasheet | ||
| TK155U65Z |
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MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL | Datasheet | ||
| TK6R9P08QM |
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MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK | Datasheet | ||
| XPW4R10ANB |
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N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L | Datasheet |
MOSFET P-CHANNEL 2A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
VEC2605Contextual Info: VEC2605 Ordering number : ENN8197 P-Channel and N-Channel Silicon MOSFET VEC2605 General-Purpose Switching Device Applications Features • • • • Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance |
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VEC2605 ENN8197 VEC2605 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2P06 Power MOSFET -2A, 60V D-S P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. |
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UT2P06 UT2P06 UT2P06G-AE3-R OT-23 2P06G QW-R502-B01 | |
MCH3314
Abstract: SCH2805
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SCH2805 ENN7760 MCH3314) SB0105) MCH3314 SCH2805 | |
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Contextual Info: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105) |
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SCH2805 ENN7760 MCH3314) SB0105) SCH2805/D | |
CPH5802Contextual Info: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004) |
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ENN6899 CPH5802 CH3306) SBS004) CPH5802] | |
ENN8206
Abstract: CPH5810 MCH3312
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CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312 | |
EMH2603Contextual Info: EMH2603 Ordering number : ENA0657 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2603 General-Purpose Switching Device Applications Features • • • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and |
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EMH2603 ENA0657 EMH2603 A0657-7/7 | |
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Contextual Info: EMH2602 Ordering number : EN8732 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and |
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EMH2602 EN8732 EMH2602 | |
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Contextual Info: ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8660 General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and |
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ECH8660 ENA1358B ECH8660 A1358-8/8 | |
EMH2601
Abstract: EN8731 it10408
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EMH2601 EN8731 EMH2601 EN8731 it10408 | |
a1358
Abstract: ECH8660
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ECH8660 ENA1358 ECH8660 PW10s, A1358-6/6 a1358 | |
W360
Abstract: FW360
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ENN7556 FW360 FW360 FW360] W360 | |
ECH8620Contextual Info: ECH8620 Ordering number : ENA0659 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8620 General-Purpose Switching Device Applications Features • • The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and |
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ECH8620 ENA0659 ECH8620 A0659-6/6 | |
EMH2602Contextual Info: EMH2602 Ordering number : EN8732A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and |
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EMH2602 EN8732A EMH2602 | |
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Contextual Info: FW356 FW356 Ordering number : ENN7743 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • For motor drives, inverters. The FW356 in corporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, |
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FW356 ENN7743 FW356 FW356/D | |
ECH8668
Abstract: ECH8660 a15102
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ECH8668 ENA1510 ECH8660 A1510-6/6 ECH8668 a15102 | |
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Contextual Info: ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8660 General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and |
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ECH8660 ENA1358B ECH8660 A1358-8/8 | |
ECH8619
Abstract: ech8 sanyo
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ECH8619 ENA0658 ECH8619 A0658-6/6 ech8 sanyo | |
w343
Abstract: 7555 7555 ID D1003 FW343 7555-1 EN755
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FW343 EN7555A PW10s) PW100ms) w343 7555 7555 ID D1003 FW343 7555-1 EN755 | |
W356
Abstract: FW356
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FW356 ENN7743 FW356 W356 | |
a1358
Abstract: a-1358
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ENA1358A ECH8660 ECH8660 PW10s, 1200mm2 A1358-6/6 a1358 a-1358 | |
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Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171 |
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ENN6980 CPH5804 MCH3312) SBS006M) CPH5804] | |
TA 8403 A
Abstract: w507 FW507 MCH3312 SB1003M
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FW507 ENN8403 FW507 MCH3312 SB1003M TA 8403 A w507 | |
MCH3312
Abstract: CPH5854 SB1003M3 A05166 marking YG
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CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG | |