MOSFET NOTES Search Results

FULLY PROTECTED MOSFET

Abstract: mosfet driver in battery applications MAX1614 diode reverse voltage protection 6v battery APP2012 10mor power-switch protection mosfet
Contextual Info: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: MOSFET driver, reverse battery protection, mosfet, reverse battery protected, power switch drivers, diode protection May 11, 2003 APPLICATION NOTE 2012 MOSFET Driver Is Reverse-Battery Protected

Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.

20V P-Channel Power MOSFET

Abstract: US6M2
Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).

Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).

QS6M4

Contextual Info: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.

EM6M1

Abstract: MOSFET IGSS 100A
Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).

Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.

Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm EMT6 Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.

Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.

QS6M4

Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions Unit : mm Structure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.

fet_11100.0

Contextual Info: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Basic MOSFET / EPAD Schematic no. fet_11100.0 MOSFET Inverter Circuit Description This circuit shows a basic MOSFET or EPAD MOSFET inverter circuit. The drain terminal is the output and the gate terminal is the input. The output voltage VO is determined by the input voltage

QS6M4

Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.

TSMT6

Abstract: voltage source inverter z source inverter QS6M4
Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.

MOSFET NOTEBOOK

Abstract: an667 APP667 FDS6680 IRF7801 MAX1636 Si4420 MOSFET Parameters
Contextual Info: Maxim > App Notes > BATTERY MANAGEMENT Keywords: Power Efficiency in Next-Generation CPUs Tied to MOSFET Choice Jan 26, 2001 APPLICATION NOTE 667 Power Efficiency in Next-Generation CPUs Tied to MOSFET Choice The need for ultra-low on-resistance and low switching losses can make notebook MOSFET choice difficult.

Contextual Info: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input

2N7225U

Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
Contextual Info: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry

2n7224U

Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
Contextual Info: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry

Contextual Info: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

210T2S

Contextual Info: GU PhotoMOS AQS210TS, 210T2S TESTING GU PhotoMOS (AQS210TS, 210T2S) 3-channel (MOSFET & 2 optocoupler) or (2 MOSFET & optocoupler) SOP 16-pin type. 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type

FDA70N20

Contextual Info: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to