MOSFET N60 Search Results

irf7n60

Abstract: n60 equivalent POWER MOSFET Rise Time 1 ns IRF7 p channel mosfet 100v 7A, 100v fast recovery diode CMT07N60 J 115 mosfet single HIGH SPEED POWER MOSFET mosfet nA idss
Contextual Info: IRF7N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this

N60S5

Abstract: triac ansteuerung 3.5kw pfc smps 450W 2kw mosfet mos sot223, 300v SPN-25 mosfet 1000v smps 5kw 2kw pfc welding
Contextual Info: COOLMOS TM COOLMOSTM von SIEMENS* Ein Quantensprung in der Hochvolt MOSFET-Technologie macht Anwenderträume wahr Lorenz L., März M., Deboy G. Power-MOSFET zählen seit nunmehr 20 Jahren zu den bedeutendsten Komponenten in der Transistorwelt. Mit einem Marktvolumen von 1.4 Mrd. US$ in 1997 und einem prognostizierten

N6040

Contextual Info: DMN6040SK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 60V 40mΩ @ V GS = 10V 50mΩ @ V GS = 4.5V ID T C = +25°C 20A 16A Description This new generation MOSFET has been designed to minimize the on- • • • Low Input Capacitance

Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production  Low on-resistance 68m @ VGS= 10V 5.6A 

Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production  Low on-resistance 68mΩ @ VGS= 10V 5.6A 

Contextual Info: DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A • applications

Contextual Info: DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A • applications

DMN6068

Abstract: DMN6068SE DMN6068SE-13
Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance

N6068

Abstract: DMN6068 n606
Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance

01N60

Abstract: BFR 965 01N6 dpak 369C NDD01N60
Contextual Info: NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Drain−to−Source Voltage

Contextual Info: DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A  applications

DMN6068

Abstract: N6068 DMN6068SE DMN6068SE-13 diode Marking code A2
Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance

DMN6068LK3

Contextual Info: DMN6068LK3 Green Product Summary V BR DSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ID RDS(on) TA = +25°C 68mΩ @ VGS = 10V 8.5A 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance

NDD01N60

Contextual Info: NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Drain−to−Source Voltage

DMN6069SE

Contextual Info: DMN6069SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS 60V Features • 100% Unclamped Inductive Switch (UIS) test in production RDS(ON) max ID TA = +25°C  Fast switching speed  Low on-resistance 69mΩ @ VGS = 10V

DMN6068LK3

Abstract: DMN6068LK3-13 DMN6068
Contextual Info: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 8.5A 60V 100mΩ @ VGS= 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production

N6066SD

Contextual Info: A Product Line of Diodes Incorporated DMN6066SSD ADVANCE INFORMATION 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C • Low on-resistance • Fast switching speed • 100% Unclamped Inductive Switch (UIS) test in production

DMN6066SSD

Abstract: N6066SD DMN6066SSD-13 1E-32
Contextual Info: A Product Line of Diodes Incorporated DMN6066SSD ADVANCE INFORMATION 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) TA = 25°C 66mΩ @ VGS= 10V 4.4A 97mΩ @ VGS= 4.5V 3.6A 60V Low on-resistance •

DMN6068LK3

Contextual Info: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS ID RDS(on) TA = 25°C 68mΩ @ VGS = 10V 8.5A 60V 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production

Contextual Info: A Product Line of Diodes Incorporated DMN6066SSD ADVANCE INFORMATION 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) TA = 25°C 66mΩ @ VGS = 10V 4.4A 97mΩ @ VGS = 4.5V 3.6A 60V Low on-resistance •

DS3205

Abstract: DMN6068LK3
Contextual Info: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS = 10V 8.5A 60V 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production

N6068L

Abstract: DMN6068LK3-13 DMN6068LK3 J-STD-020D DMN6068
Contextual Info: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 8.5A 100mΩ @ VGS= 4.5V

dt6001

Abstract: mosfet n60a
Contextual Info: SSW/I1N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ I B V DSS - 6 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 p A Max. @ Vw = 600V

N6040SD

Abstract: d2 marking N6040 N6040s
Contextual Info: DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) max TA = 25°C 40mΩ @ VGS = 10V 5.0A 55mΩ @ VGS = 4.5V 4.4A 60V Low Input Capacitance Low On-Resistance