MOSFET MARKING LY Search Results

FS12KM

Abstract: FS12KM-5
Contextual Info: MITSUBISHI Neh POWER MOSFET FS12KM-5 HIGH-SPEED SWITCHING USE FS12KM-5 OUTLINE DRAWING • V dss . Dimensions in mm 250V 0.40Q • rDS ON (MAX) . • I d . 12A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS12UM-5 HIGH-SPEED SWITCHING USE FS12UM-5 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 >3.6 1.0 2.54 2.54 UJ U 0.5 2.6 LU OP ® 9<D iH —1 \ 0 w h i* i in i— • V dss .

IRF3707Z

Abstract: IRF3707ZL IRF3707ZS
Contextual Info: PD - 95333 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Qg 9.7nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance

IRF3707Z

Abstract: IRF3707ZL IRF3707ZS
Contextual Info: PD - 95333 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Qg 9.7nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance

IRF3706

Abstract: IRF3706L IRF3706S IRF530S IRL3103L ED marking code diode to262 pcb footprint
Contextual Info: PD - 93936C IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS

SEC IRF 640

Abstract: IRFP1405 95A 640 95A Marking
Contextual Info: PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 5.3mΩ

6N303

Abstract: 3P303 MMDFS3P303 MMDFS3P303R2
Contextual Info: MMDFS3P303 Power MOSFET 3 Amps, 30 Volts P–Channel SO–8, FETKYt The FETKY product family incorporates low RDS on , MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a

BATERY protection

Abstract: FDY3000NZ SC89
Contextual Info: January 2007 FDY3000NZ tm DualN-Channel2.5V Specified PowerTrench“ MOSFET GeneralDescription Features Thi s Dual N-Channel MOSFET has been desi gned usi ng Fai rchi l d Semi conductor’ s advanced Power Trench process to opti mi ze the RDS ON @ VGS = 2.5v.

e1220

Abstract: 2SK2437
Contextual Info: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.

25N03

Abstract: TSM25N03
Contextual Info: TAIW AN % TSM25N03 SEMICONDUCTOR 25V N-Channel MOSFET pbj RoHS CO M PLÌAN C E TO -252 PRODUCT SUMMARY Pin D efinition; 1. Gate 2. Drain Vos (V 3. S o u rc e €' * j r »m R D S (on)(m Q ) Id (A) 14 @ Vcs = 10V 25 19 @ V « » = 4 .5 V 25 25 i ì 23 Features

AN-994

Abstract: IRF2807Z IRF2807ZL IRF2807ZS
Contextual Info: PD - 95488 AUTOMOTIVE MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF

AN-994

Abstract: IRF2807Z IRF2807ZL IRF2807ZS
Contextual Info: PD - 95488 AUTOMOTIVE MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF

irf 920a

Abstract: AN-994 IRFZ48Z IRFZ48ZL IRFZ48ZS
Contextual Info: PD - 95574 IRFZ48ZPbF IRFZ48ZSPbF IRFZ48ZLPbF AUTOMOTIVE MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

IRL3705Z

Abstract: IRL3705ZL IRL3705ZS
Contextual Info: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

Contextual Info: TAIW AN s TSM3424 SEMICONDUCTOR 30V N-Channei MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCTS ÜMMARY P in D e fin itio n : VDS{V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on){lTlÛ) Id (A) 30 @ VGS= 10V 6.7 42 @ V gs = 4.5V 5.7 30 1 23 Features

43a 504 pcb mounted

Contextual Info: PD - 95407 AUTOMOTIVE MOSFET IRF1302SPbF IRF1302LPbF Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

IRL3103L

Abstract: IRL3716 IRL3716L IRL3716S ED 72A
Contextual Info: PD - 94403A IRL3716 IRL3716S IRL3716L SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring Benefits l Ultra-Low Gate Impedance

8521L

Contextual Info: FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to

ac power adapter for notebook schematic

Abstract: ISL6256AEVAL2Z ISL6251HAZ 10A PWM Charger charger IC NiMh 4 ch DIODE smd marking R12 6256HAZ 2010 smd resistor 3 pin preset resistor 10k dc adaptor 30v
Contextual Info: ISL6256AEVAL2Z Evaluation Board Setup Procedure Application Note October 25, 2007 AN1364.0 Low Cost Multi-Chemistry Battery Charger Controller Features The ISL6256AEVAL2Z Evaluation kit includes all the circuitry needed to demonstrate the capabilities of the ISL6256

AN-994

Abstract: IRF3007L IRF3007S
Contextual Info: PD - 95494 IRF3007SPbF AUTOMOTIVE MOSFET IRF3007LPbF Typical Applications l l HEXFET Power MOSFET 42 Volts Automotive Electrical Systems Lead-Free D VDSS = 75V Features l l l l Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

TE SSOT-6

Abstract: FDZ201N C5512
Contextual Info: FDZ201N N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a

Contextual Info: LTC1155 TECHNOLOGY Dual High Side M ic ro p o w e r MOSFET Driver F€RTUR€S DCSCRIPTIOn • Fully Enhances N-Channel Power MOSFETs ■ 8uA Standby Current ■ 85uA ON Current ■ Short-Circuit Protection ■ Wide Power Supply Range: 4.5V to 18V ■ Controlled Switching ON and OFF Times

AN-994

Abstract: IRF820A IRF820AL IRF820AS
Contextual Info: PD - 95533 IRF820ASPbF IRF820ALPbF SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

8 PIN RELAY 6V dc pla circuit diagram

Contextual Info: LinÇAB_ ¡ss Dual High Side TECHNOLOGY M icropow er MOSFET Driver F€flTUft€S D CSC RIPTIOfl • Fully Enhances N-Channel Power MOSFETs The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications.