MOSFET MARKING LY Search Results

S10V siemens

Contextual Info: SIPMOS P Channel MOSFET BSS84 • SIPMOS - enhancement mode • Drain-source voltage Ifc* = -50V • Continuous drain current l B = -0.13A • Drain-source on-resistance • Total power dissipation «• .} = 1 0 .0 0 PD = 0.36W Type Marking Ordering cod e for

K2094

Abstract: marking 82T 0014b34 2SK2094 2SK2094F5
Contextual Info: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm • available in C P T F5 package • p ackage marking: K2094-A-Q, w here ★ is hFE code and □ is lot num ber • low on-resistance 2SK2094 (C PT F5) • fast switching speed • w ide S O A (S a fe O perating A rea)

TRANSISTOR mosfet BF998

Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
Contextual Info: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

PHILIPS MOSFET MARKING

Abstract: BF998R UBB087
Contextual Info: 00E3tM3 474 • Philips Semiconductors Data sheet status Product specification date of issue O ctob e r 1990 FEATURES • Short channel transistor with high ratio lYfs |/C S. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

bf998 Mop

Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Contextual Info: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

Contextual Info: Si3402 F U L LY - I N T E G R A T E D 8 0 2 . 3 - C O M P LI A N T P O E P D I N T E R F A C E AND LOW-EMI SWITCHING REGULATOR Features  IEEE 802.3 standard-compliant solution, including pre-standard legacy PoE support  Highly-integrated IC enables

FS12KM4A

Abstract: FS12KM FS12UM-4A FS12KM-4A T70 N03 412 igbt 200V 4A r70 sop marking code mp SOT-89 mosfet marking l FS16KM-4
Contextual Info: K W E R E X StlOrt FONTI Ddtd Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V and 2.5V SOP-8 n-channel and p-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics

KEYPAD 4X3

Abstract: 4x3 matrix keypad KEYPAD 4X3 SWITCH 3x4 Keypad keypad 3x4 3x4 matrix keypad 4x3 keypad KEYPAD 5x4 keypad 3x4 matrix datasheet keypad 3x4
Contextual Info: SERIES 37F CUSTOM PIEZO K E Y PA D S AND PUSHBUTTONS V A N D A L R V I R T U A L LY E S I S T A N T I A N D N D E S T R U C T A B L E Function Section View Advantages Technology The switch function is based on the the physical principal of the Piezo effect. The external push force increase or

B1470

Abstract: K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 • V d s s . 2 .8 ± 0 . 2 250V • rDS ON (MAX) . 0 .1 9 Q

Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching

FS12KM

Abstract: FS12KM-5
Contextual Info: MITSUBISHI Neh POWER MOSFET FS12KM-5 HIGH-SPEED SWITCHING USE FS12KM-5 OUTLINE DRAWING • V dss . Dimensions in mm 250V 0.40Q • rDS ON (MAX) . • I d . 12A

B1470

Abstract: FS20KM-5 K775 M-1510 MAX240 FS 8201 mitsubishi fs20km-5
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 • V dss . 2.8 ± 0 .2 250V • rDS ON (MAX) . 0 .1 9Q • Id

FS16UM-5

Abstract: FS16UM5 k775 MAX240
Contextual Info: MITSUBISHI Neh POWER MOSFET FS16UM-5 HIGH-SPEED SWITCHING USE • V ds s .250V • rDS ON (M AX) .0.25Í2 • Id . 16A

FS16KM-5

Abstract: FS16KM5 diode 3005 2 XK power 220
Contextual Info: MITSUBISHI Neh POWER MOSFET FS16KM-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ±0.3 • V dss . 2.8 ±0.2 -250V • rDS ON (MAX) . 0.25Í2 • Id . 16A

FS10UM-5

Abstract: 3DG5 FS10UM5 K775 MAX240 3d fs 45 1.5A 150V power mosfet
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 OUTLINE DRAWING Dimensions in mm 0@ © © D © • V d s s . GATE DRAIN SOURCE DRAIN 250V • rDS (ON (MAX) .0 .5 2 Í2

FS12KM-5

Abstract: FS12KM FS12KM5 K775 N channel mosfet TO220 MAX240 14Ml M-1510 3020H
Contextual Info: MITSUBISHI Neh POWER MOSFET FS12KM-5 HIGH-SPEED SWITCHING USE FS12KM-5 OUTLINE DRAWING • V dss . Dimensions in mm 250V 0.40Q • rDS ON (MAX) . • I d . 12A

IRL3103L

Abstract: IRL3715Z IRL3715ZL IRL3715ZS
Contextual Info: PD - 95581 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF

Contextual Info: PD - 95581 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF

FET marking code

Abstract: IRF Power MOSFET code marking IRL3103L IRL3715Z IRL3715ZL IRL3715ZS
Contextual Info: PD - 95581 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF

IRL3103L

Abstract: IRL3714Z IRL3714ZL IRL3714ZS
Contextual Info: PD - 95661 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF

Contextual Info: FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 mΩ Features General Description „ Max rDS on = 75 mΩ at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process,

Contextual Info: PD - 95661 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF

B1470

Abstract: FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ±0.2 4» • V d s s . -2 5 0 V • rDS ON (MAX) . 0.52Q

K775

Abstract: B1470 FS20UM-5 sk 3005 FS20UM MAX240 mitsubishi marking diode ct 2405
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20UM-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING FS20UM-5 Dimensions in mm 4.5 1.3 0.5 2.6 ffi o@ © © GATE © DRAIN © SOURCE ® DRAIN • Vd s s •2 5 0 V . • rDS ON (MAX) 0 . 1 9 Í2 • I D .