MOSFET MARKING CODE INV Search Results

SSN2N7002A

Contextual Info: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A

2N AND 2P-CHANNEL ENHANCEMENT

Abstract: LCD Monitor Inverter marking p2s PMOS-2 NMOS-2 DEVICE MARKING p1g code n1d marking code p1S 2 CHANNEL N-CHANNEL MOSFET marking code P1D
Contextual Info: AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer

NMOS2

Abstract: transistor marking code N1G NMOS-2 2N AND 2P-CHANNEL ENHANCEMENT DEVICE MARKING p1g AF9902M Anachip f 1 p2s P1D mosfet LCD Monitor Inverter
Contextual Info: AF9902M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer

Contextual Info: PD - 97565A IRLHM620PbF HEXFET Power MOSFET VDS 20 V VGS max ±12 V RDS on max 2.5 mΩ (@VGS = 4.5V) RDS(on) max 3.5 mΩ Qg (typical) 52 nC ID 40h A (@VGS = 2.5V) (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN Applications • Battery Operated DC Motor Inverter MOSFET

irlhm620

Abstract: 13002 l 33x33 AN-1154
Contextual Info: PD - 97565A IRLHM620PbF VDS 20 V VGS max ±12 V RDS on max 2.5 mΩ (@VGS = 4.5V) RDS(on) max 3.5 mΩ Qg (typical) 52 nC ID 40h A (@VGS = 2.5V) (@Tc(Bottom) = 25°C) HEXFET Power MOSFET D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN Applications • Battery Operated DC Motor Inverter MOSFET

irlhm620

Abstract: AN-1154
Contextual Info: PD - 97565 IRLHM620PbF VDS 20 V VGS max ±12 V RDS on max 2.5 mΩ (@VGS = 4.5V) RDS(on) max 3.5 mΩ Qg (typical) 52 nC ID 40h A (@VGS = 2.5V) (@Tc(Bottom) = 25°C) HEXFET Power MOSFET D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN Applications • Battery Operated DC Motor Inverter MOSFET

IRFH5300TRPBF

Abstract: IRFH5300PBF irfh5300 IRFH5300TR2PBF PQFN footprint AN-1154
Contextual Info: PD -97410 IRFH5300PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.4 m 50 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) : : h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

irfh5300

Contextual Info: PD -97410A IRFH5300PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.4 m 50 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) : : h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

IRFH5250TRPBF

Abstract: irfh5250 IRFH5250TR2PBF AN-1154 IRFH5250PBF
Contextual Info: PD -96265 IRFH5250PbF HEXFET Power MOSFET VDS 25 RDS on max 1.15 m 52 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) V : : h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

AN-1154

Abstract: IRFH5250TR2PBF IRFH5250TRPBF
Contextual Info: PD -96265A IRFH5250PbF HEXFET Power MOSFET VDS 25 RDS on max 1.15 m 52 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) V : : h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

irlhm630

Abstract: AN-1154 J-STD-020D 13002 l JESD47
Contextual Info: PD - 97567 IRLHM630PbF HEXFET Power MOSFET VDS VGS max RDS on max 30 V ±12 V 3.5 mΩ 4.5 mΩ Qg (typical) 41 nC ID 40h A (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN Applications • Battery Operated DC Motor Inverter MOSFET

AN-1154

Abstract: IRFH5300TR2PBF IRFH5300TRPBF PQFN footprint IRFH5300
Contextual Info: PD -97410A IRFH5300PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.4 m 50 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) : : h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

st 13001 TRANSISTOR

Abstract: transistor x 13001 IRS2016 diagram transistor 13001 "Common rail" AEC-Q100 AEC-Q100-002 AUIRS2016S free circuit diagram for 13001 tr 13001
Contextual Info: January 26 2009 Automotive Grade AUIRS2016S TR Features • • • • • • • Leadfree, RoHS compliant Automotive qualified* One high side output and internal low side Vs recharge. CMOS Schmitt trigger inverted input with pull up resistor CMOS Schmitt trigger inverted reset with pull

Contextual Info: IRLHM620PbF VDS 20 V VGS max ±12 V RDS on max 2.5 mΩ (@VGS = 4.5V) RDS(on) max 3.5 mΩ Qg (typical) 52 nC ID 40h A (@VGS = 2.5V) (@Tc(Bottom) = 25°C) HEXFET Power MOSFET D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN Applications • Battery Operated DC Motor Inverter MOSFET

IRFH5250

Abstract: IRFH5250TRPBF
Contextual Info: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

Contextual Info: StrongIRFET™ IRFH8202PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@TC(Bottom) = 25°C) 25 V 1.05 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

Contextual Info: IRFH8202TRPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@TC(Bottom) = 25°C) 25 V 1.05 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

Contextual Info: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

Contextual Info: IRLHM620PbF HEXFET Power MOSFET VDS VGS max RDS on max 20 ±12 V V 2.5 mΩ 3.5 mΩ 52 nC 40h A (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Q g (typical) ID (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN Applications • Battery Operated DC Motor Inverter MOSFET

Contextual Info: IRLHM630PbF HEXFET Power MOSFET VDS VGS max RDS on max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Q g (typical) ID (@Tc(Bottom) = 25°C) 30 ±12 V V 3.5 mΩ 4.5 mΩ 41 nC 40h A D 5 4 G D 6 3 S D 7 2 S D 8 1 S PQFN 3.3mm x 3.3mm Applications • Battery Operated DC Motor Inverter MOSFET

Contextual Info: IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

full bridge mosfet smps

Abstract: Full bridge SMPS full-bridge SMPS motor driver full bridge 10A 100V Full-bridge inverter IRF P CHANNEL MOSFET 100v 5M MARKING CODE DIODE 5A 100V half bridge smps smps half bridge AN1001
Contextual Info: PD - 95378 IRFB59N10DPbF IRFS59N10DPbF IRFSL59N10DPbF SMPS MOSFET Applications l High frequency DC-DC converters l UPS / Motor Control Inverters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 100V 0.025Ω 59A Benefits l Low Gate-to-Drain Charge to Reduce

AF9901M

Abstract: NMOS-2 LCD Monitor Inverter 2N AND 2P-CHANNEL ENHANCEMENT P2d MARKING CODE NMOS-1 N and P MOSFET
Contextual Info: AF9901M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer

Contextual Info: PD - 95378 IRFB59N10DPbF IRFS59N10DPbF IRFSL59N10DPbF SMPS MOSFET Applications l High frequency DC-DC converters l UPS / Motor Control Inverters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 100V 0.025Ω 59A Benefits l Low Gate-to-Drain Charge to Reduce