MOSFET MARKING BC Search Results

marking code 11s

Abstract: MARKING CODE 21S BF543
Contextual Info: BF543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration

BF999

Abstract: triode sot23
Contextual Info: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S

BF999

Abstract: triode sot23
Contextual Info: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S - - Package

marking code BC

Contextual Info: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability

2 a diode

Abstract: Si5445DC Si5445DC-T1 71063 marking code BC
Contextual Info: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability

VISHAY BC 047

Abstract: Si5445DC Si5445DC-T1
Contextual Info: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability

marking code BC

Abstract: Si5445DC
Contextual Info: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BC XX

marking code BC

Contextual Info: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BC XX S

Contextual Info: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage

a/TDA 8309

Abstract: CMZ5928B CMZ5920B CMZ5915B
Contextual Info: LT8309 Secondary-Side Synchronous Rectifier Driver Features Description Works with DCM and BCM/CrCM Conduction Mode Flyback Topologies n V : 4.5V to 40V CC n Supports Up to 150V MOSFETs n 26ns Turn-Off Propagation Delay n Accurate Minimum On and Off Timers for Reliable

K2057

Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Contextual Info: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series

Contextual Info: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

ss8050 equivalent

Abstract: hfc0100 flyback converter DC/DC 400V
Contextual Info: MP4700 High-Brightness, BCM, Low Side Buck White LED Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP4700 is a high-efficiency step-down converter designed to drive high-brightness light emitting diodes. •    The MP4700 drives an external MOSFET in

Mosfet

Contextual Info: SSF3056C 30V Complementary MOSFET Preliminary Main Product Characteristics NMOS PMOS D1 S1 NMOS VDSS 30V -30V D1 G1 D2 S2 PMOS RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A D2 G2 -4.5A Schematic Diagram DFN2X3-8L Features and Benefits   Advanced trench MOSFET process technology

Contextual Info: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver

Contextual Info: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver

Diodes Incorporated 17-33

Abstract: DS-33010 complementary MOSFET sot89 BCX6825TA
Contextual Info: A Product Line of Diodes Incorporated BCX6825 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 20V High current capability Maximum Continuous Current IC = 1A Low saturation voltage VCE sat < 500mV @ 1A

Contextual Info: A Product Line of Diodes Incorporated BCX6825 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 20V High current capability Maximum Continuous Current IC = 1A Low saturation voltage VCE sat < 500mV @ 1A

SMD Marking Code 43a

Abstract: BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF
Contextual Info: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA

Contextual Info: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver

marking code BC

Contextual Info: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver

em 234 stepper

Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

Contextual Info: SO T4 57 PMN40UPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.