MOSFET IR 250 N Search Results

k3226

Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
Contextual Info: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

Contextual Info: IR F M 2 1 4 A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jjA M a x. @ VDS= 250V

IRFS244A

Contextual Info: IR FS244A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 0 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10^iA (Max.) @ V DS = 250V

IRFS244

Contextual Info: IR FS244 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 0 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10^iA (Max.) @ V DS = 250V

IRF644S

Contextual Info: IR F644S A dvanced Power MOSFET FEATURES B V dss = 250 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -2 8 ÌÌ 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

IRFS244

Abstract: 5BA DIODE
Contextual Info: IR FS244 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 0 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10^iA (Max.) @ V DS = 250V

E5CC

Abstract: 108D IRFS254A erij
Contextual Info: IR FS254A A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Rugged Gate Oxide Technology ^DS on = 0.1 4Q ♦ Lower Input Capacitance lD = 16 A ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO -3PF ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

OM803

Abstract: OM9007SC OM9008SC OM9009SC OM9010SC static characteristics of mosfet
Contextual Info: OM9007SC OM9008SC OM9009SC OM9010SC POWER MOSFETS & FAST RECOVERY RECTIFIER IN HERMETIC ISOLATED JEDEC MO-078 PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET And Fast Recovery Power Rectifier FEATURES • • • • • Uncommitted MOSFET And Rectifier In One Package

Contextual Info: A d van ced Power MOSFET IR L R /U 1 3 0 A FEATURES B V DSS - 100 V ^D S o n = 0 .1 2 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 13 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK

Contextual Info: IRL640 A d van ced Power MOSFET FEATURES BV DSS = 200 V ♦ Logic-Level Gate Drive - 0.1 8 fl ♦ Avalanche Rugged Technology ^D S o n ♦ Rugged Gate Oxide Technology In = 1 8 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area

Contextual Info: IRLW/I640A A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S o n = 0 .1 8 f l ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K

OM9001SS

Abstract: OM9002SS OM9003SS OM9004SS 2 Amp zener diode
Contextual Info: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier

Contextual Info: IRL640S A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S o n = 0 .1 8 f l ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ 150°C Operating Temperature

Contextual Info: IRLR/U210A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V

Contextual Info: IRL620S A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology cn ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature

Contextual Info: IRLW/I620A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology cn ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature

IRF624

Contextual Info: IR F624 A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 .1 Q 4 .1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10nA(M ax.) @ V DS = 250V

Contextual Info: IR L R /U 110A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .4 4 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK

Contextual Info: IRLR220 A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V

Contextual Info: IRLR/U220A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V

Contextual Info: IR L W /I510A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .4 4 Ì2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD LO Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: IRL630 A d van ced Power MOSFET FEATURES BVDSS - ♦ Logic-Level Gate Drive 0.4Î2 > CD o ♦ Rugged Gate Oxide Technology II ^ D S o n = ♦ Avalanche Rugged Technology 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area

Contextual Info: IRL610S A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . o ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology CO CO ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature

Contextual Info: IRLW/I610A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . o ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology CO CO ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature