MOSFET IDM 200A Search Results

Contextual Info: AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM

Contextual Info: AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max

Contextual Info: AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 40A RDS(ON),max

Contextual Info: AOTF7T60P 600V,7A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 28A RDS(ON),max < 1.1Ω

Contextual Info: AOWF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max < 0.52Ω

Contextual Info: BUK454-200A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)30 I(D) Max. (A)9.2 I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)3.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)

Mosfet

Abstract: SSF1006A
Contextual Info: SSF1006A 100V N-Channel MOSFET FEATURES ID =200A  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product BV=100V RDS ON =4.7mΩ（Typ.） DESCRIPTION The SSF1006A is a new generation of high voltage and low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Preliminary Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

SSF4004

Abstract: 25Starting pn junction diode N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V BV40V
Contextual Info: SSF4004 Feathers: ID=200A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=40V

IRF150 MOSFET AMP circuit

Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
Contextual Info: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given

Contextual Info: 6- H-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices

48v 150A mosfet switch

Contextual Info: 8- Three-Phase Full-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/AC switch mode power supplies. Both the

Q0011

Contextual Info: 9- Three-Phase Full-Bridge MOSFET Module With Gate Driver: Features: Description: •Low R ds M OSFET s . •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/AC switch mode power supplies. Both the

DIODE T25

Abstract: N mosfet 100v 200A "MOSFET Module" E80276 FM400TU-2A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated

"MOSFET Module"

Abstract: E80276 FM400TU-07A 48V battery forklift
Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated

Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated

Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated

MOSFET 200A 24V

Abstract: E80276 FM400TU-2A mitsubishi MOSFET N mosfet 100v 200A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated

Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated

"MOSFET Module"

Abstract: E80276 FM400TU-3A mitsubishi MOSFET
Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated

DIODE T25 4

Abstract: DIODE T25 FM400TU E80276 FM400TU-3A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated

DIODE T25

Abstract: DIODE T25 4 DIODE T25 4 do E80276 FM400TU-07A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated

Module

Abstract: FM200HB1D5B
Contextual Info: SEMICONDUCTOR FM200HB1D5B TECHNICAL DATA 150V / 200A 2 - PACK MOSFET MODULE Half - Bridge FEATURES ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Motor control ・Battery management system OUTLINE DRAWING