MOSFET GHZ Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device

80 watt hf mosfet

Abstract: MRF185
Contextual Info: MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET

MRF185

Contextual Info: MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET

J239

Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Contextual Info: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET

MRF185

Contextual Info: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device

Contextual Info: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device

Power MOSFET TT 2146

Abstract: transistor TT 2146 mosfet TT 2146 MOTOROLA N-Channel MOSFET
Contextual Info: MOTOROLA O rder this docum ent by M RF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET

j718

Abstract: VK200/10-3B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

905-170

Abstract: MRF3010 VK200 VK20019-4B
Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

Contextual Info: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance

quad mosfet array

Abstract: 731 MOSFET PE84140 PE84140-EK 8 mosfet array F617
Contextual Info: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance

PE4140

Abstract: PE4140-02 617DB-1024 ETC1-1-13 PE4140-00 PE4140-01 PE4140-EK
Contextual Info: PRODUCT SPECIFICATION PE4140 Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE4140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array

PE84140

Abstract: PE84140-EK peregrine cmos mixer 3v quad MOSFET ARRAY
Contextual Info: Advanced Information PE84140 Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array

mosfet 6 ghz

Abstract: 2.4 ghz mosfet mosfet ghz
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF183 Advance Information The RF MOSFET Line M otorola Preferred Device RF Power Field Effect Transistors 45 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs

Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description The PE4140 is an ultra-high linearity, UltraCMOS™ passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad

J133 mosfet transistor

Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2

617DB-1024

Abstract: PE4140G-06DFN balun diode mixer ETC1,6-4-2-3 ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK 4239 mosfet
Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

mosfet ghz

Abstract: mrf182
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF182 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect TVansistors 30 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device

617DB-1024

Abstract: ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK PE4140G-06DFN
Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

Mixers

Abstract: PE4140
Contextual Info: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with

"RF MOSFET"

Abstract: MRF185 MOTOROLA MRF185 375B-04 NI-860
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF185 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz

PE4246

Abstract: PE4246-EK
Contextual Info: PRODUCT SPECIFICATION PE4246 SPST High-Isolation, 50Ω Absorptive MOSFET RF Switch Product Description The PE4246 is a high-isolation MOSFET RF Switch designed to cover a broad range of applications from DC to 5.0 GHz, and is non-reflective at both RF1 and