MOSFET GATE DRIVERS Search Results
MOSFET GATE DRIVERS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
MOSFET GATE DRIVERS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LM5112MY
Abstract: LM5112
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LM5112 LM5112 SNVS234B LM5112MY | |
D6563Contextual Info: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Two-Channel/Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6562FV-LB, BD6563FV-LB ●General Description These products guarantee long term operation and supply for industrial instrument market. |
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BD6562FV-LB, BD6563FV-LB 380ns 345ns BD6562FV-LB/BD6563FV-LB D6563 | |
Contextual Info: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Two-Channel/Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6562FV-LB, BD6563FV-LB ●General Description These products guarantee long term operation and supply for industrial instrument market. |
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BD6562FV-LB, BD6563FV-LB 380ns 345ns BD6562FV-LB/BD6563FV-LB | |
Contextual Info: EMB1412 www.ti.com SNOSB66A – AUGUST 2011 – REVISED MAY 2013 EMB1412 MOSFET Gate Driver Check for Samples: EMB1412 FEATURES DESCRIPTION • The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-Lead exposed-pad VSSOP package, with improved power dissipation |
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EMB1412 SNOSB66A EMB1412 | |
Contextual Info: EMB1412 www.ti.com SNOSB66A – AUGUST 2011 – REVISED MAY 2013 EMB1412 MOSFET Gate Driver Check for Samples: EMB1412 FEATURES DESCRIPTION • The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-Lead exposed-pad VSSOP package, with improved power dissipation |
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EMB1412 SNOSB66A EMB1412 | |
Contextual Info: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Two-Channel/Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6562FV-LB, BD6563FV-LB ●General Description These products guarantee long time support in Industrial market. These products are the most suitable to use as these |
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BD6562FV-LB, BD6563FV-LB 380ns 345ns BD6562FV-LB/BD6563FV-LB | |
irf510 switch
Abstract: irf840 mosfet drive circuit diagram MOSFET IRF740 as switch irf520 switch IRFZ44 mosfet IRFZ44 IRF540 IRF510 application note gate drive for mosfet irfz44 power MOSFET IRF740 driver circuit
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Contextual Info: UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off |
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UT2N10 UT2N10 QW-R502-511 | |
7404 not gate ic
Abstract: 7404 not gate 14 pin ic 7404 datasheet 14 pin ic 7404 not gate datasheet ic 7404 datasheet data sheet IC 7404 SLMA002 ic 7404 not gate datasheet PIC mosfet driver IC 7404 datasheets
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A120905 SLUB005A 7404 not gate ic 7404 not gate 14 pin ic 7404 datasheet 14 pin ic 7404 not gate datasheet ic 7404 datasheet data sheet IC 7404 SLMA002 ic 7404 not gate datasheet PIC mosfet driver IC 7404 datasheets | |
Application Note 91
Abstract: 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp
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24-Oct-11 Application Note 91 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp | |
DRF200G
Abstract: DRF100 DRF200 ultrasound transducer
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DRF200G 30MHz DRF200 15MHz. DRF200 15MHz 30MHz DRF200G DRF100 ultrasound transducer | |
bg markingContextual Info: NCP5351 Product Preview Synchronous Power MOSFET Driver The NCP5351 is a dual MOSFET gate driver optimized to drive the gates of both high and low side Power MOSFETs in a Synchronous Buck converter. The NCP5351 is an excellent companion to multiphase controllers that do not have integrated gate drivers, such as |
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NCP5351 CS5323, CS5305 CS5307. NCP5351 CS5201 bg marking | |
LM5112MY
Abstract: LM5112 LM5112MYX LM5112SD LM5112SDX MTD6N15 Q100 SDE06A LM5112 equivalent IC MOSFET QG 6 PIN
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LM5112 LM5112 CSP-9-111S2) CSP-9-111S2. LM5112MY LM5112MYX LM5112SD LM5112SDX MTD6N15 Q100 SDE06A LM5112 equivalent IC MOSFET QG 6 PIN | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off |
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UT2N10 UT2N10 QW-R502-511 | |
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620 tg diode
Abstract: NTD80N02 BAS16HT1 BAT54HT1 NCP5306 NCP5314 NCP5316 NCP5351 NCP5355 NCP5355D
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NCP5355 NCP5355 NCP5306, NCP5314 NCP5316. NCP5355/D 620 tg diode NTD80N02 BAS16HT1 BAT54HT1 NCP5306 NCP5316 NCP5351 NCP5355D | |
80NO2
Abstract: mosfet 80NO2 NCP5314 SC1205 BAT54 CS5305 CS5307 CS5323 NCP5351 NCP5351D
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NCP5351 NCP5351 CS5323, CS5305 CS5307. r14525 NCP5351/D 80NO2 mosfet 80NO2 NCP5314 SC1205 BAT54 CS5307 CS5323 NCP5351D | |
hf amplifier 100w
Abstract: DFR100 high speed mosfet driver 3NF 06 drf100 for low power output power ultrasound transducer circuit driver ultrasound transducer high power driver DRF100
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DRF100 30MHz DRF100 30MHz. 300oC hf amplifier 100w DFR100 high speed mosfet driver 3NF 06 drf100 for low power output power ultrasound transducer circuit driver ultrasound transducer high power driver | |
Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds |
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TC7320 TC7320 32-lead DSFP-TC7320 C122208 | |
Contextual Info: Freescale Semiconductor Advance Information Document order number: MC33816 Rev. 2.0, 11/2012 Automotive Engine Control IC with Smart Gate Control The 33816 is a 12 channel gate driver IC for automotive engine control applications. The IC consist of five external MOSFET high side predrivers and seven external MOSFET low side pre-drivers. The 33816 |
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MC33816 STR0326182960 | |
AN705
Abstract: schematic diagram reverse forward motor Si9910DJ Si9910 Si9910DY VN50300 VN50300T motordrive circuits fast recovering diodes for spike protection application note gate driver with bootstrap capac
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AN705 Si9910 Si9910 15-Feb-94 Si9910DJ AN705 schematic diagram reverse forward motor Si9910DY VN50300 VN50300T motordrive circuits fast recovering diodes for spike protection application note gate driver with bootstrap capac | |
drf100Contextual Info: DRF100 15V, 8A, 30MHz MOSFET Driver Hybrid The DRF100 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 30MHz. It can produce output currents ≥8A RMS, while dissipating 60W. The Driver |
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DRF100 30MHz DRF100 30MHz. DRF10 | |
7404 not gate ic
Abstract: 7404 not gate ttl cmos advantages disadvantages TC1426 ic 7404 not gate datasheet IC 7404 14 pin ic 7404 not gate datasheet data sheet IC 7404 not gate ic 7404 ic 7404 datasheet
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B010203 SLUB005 7404 not gate ic 7404 not gate ttl cmos advantages disadvantages TC1426 ic 7404 not gate datasheet IC 7404 14 pin ic 7404 not gate datasheet data sheet IC 7404 not gate ic 7404 ic 7404 datasheet | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and |
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UF830Z O-220F UF830ZL-TF3-T UF830ZG-TF3-T O-220F QW-R502-612 | |
S1-M10Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay |
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UF830 O-220 O-220F O-220F1 O-262 O-263 O-251 O-252 QW-R502-046 S1-M10 |