MOSFET D 476 Search Results

IRLR3705Z

Abstract: IRLU3705Z irlru3705z
Contextual Info: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET l l Description D VDSS = 55V

IRLR3705Z

Abstract: IRLU3705Z irlru3705z
Contextual Info: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET l l Description D VDSS = 55V

CA3130

Abstract: pin diagram of IC ca3130 IC1 CA3130 CA3130A CA3130AS CA3130T IC CA3130 application pin diagram of ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER 200-microampere
Contextual Info: H A R R IS SE H IC O N D ff H A R b lE SECTOR R I M3Q5S71 D TflM IHAS CA3130 S SEMICONDUCTOR BiMOS Operational Amplifier with MOSFET Input/CMOS Output April 1993 Features • 004bE77 Description MOSFET Input Stage Provides: - Very High Z| * 1.5 TO 1 3 x 1012fi) lyp .

TH 2190 mosfet

Abstract: IRFu2307z IRFR2307Z
Contextual Info: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D RDS on = 16mΩ G Description

TH 2190 mosfet

Abstract: th 2190 IRFR2307Z IRFU2307Z
Contextual Info: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D RDS on = 16mΩ G Description

Contextual Info: PD - 95090 IRLR3915PbF IRLU3915PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D

AN-1005

Abstract: D-PAK package
Contextual Info: PD - 95090A IRLR3915PbF IRLU3915PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

U3114

Abstract: IRLR3114Z AN-1005 IRLU3114ZPBF IRLR3114ZPBF
Contextual Info: PD - 97284 AUTOMOTIVE MOSFET Features l l l l l l IRLR3114ZPbF IRLU3114ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Logic Level D VDSS = 40V

IRFR3504

Abstract: IRFU3504
Contextual Info: PD - 95315A IRFR3504PbF IRFU3504PbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V

AN-994

Abstract: EIA-541 IRFR120 IRFR3710Z IRFU120 IRFU3710Z
Contextual Info: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

Contextual Info: PD - 94728 IRFR4104 IRFU4104 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 5.5m!

IRFR1010Z

Contextual Info: PD - 96897 AUTOMOTIVE MOSFET IRFR1010Z IRFU1010Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 7.5mΩ G

P916A

Abstract: FET marking code FET MARKING QG
Contextual Info: PD- 95095 IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D

IRFR540Z

Abstract: IRFU540Z P916A
Contextual Info: APPROVED PD - TBD AUTOMOTIVE MOSFET IRFR540Z IRFU540Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 100V RDS on = 28.5mΩ

IRF FET

Abstract: FET MARKING QG MOSFET LOSSES SYNC BUCK fet data book free download 10BQ040 EIA-541 IRFR120 IRFU120 IRLR8103V IRLR8503
Contextual Info: PD- 95095A IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D

IRFR4104

Abstract: IRFU4104
Contextual Info: PD - 95425A IRFR4104PbF IRFU4104PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V

U3710

Abstract: IRFR3710Z IRFU3710Z IRFR3710
Contextual Info: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

Contextual Info: PD - 95521 IRFR3504ZPbF IRFU3504ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V

Contextual Info: PD - 95315 IRFR3504PbF IRFU3504PbF AUTOMOTIVE MOSFET Features O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description D

Contextual Info: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

IRLR2905Z

Abstract: IRLU2905Z
Contextual Info: PD - 95848 IRLR2905Z IRLU2905Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● ● Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V

AN-1005

Abstract: IRFR540ZPBF
Contextual Info: PD - 96141 AUTOMOTIVE MOSFET IRFR540ZPbF IRFU540ZPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

IRFR1010Z

Abstract: IRf 48 MOSFET IRFU1010Z
Contextual Info: PD - 96897 AUTOMOTIVE MOSFET IRFR1010Z IRFU1010Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 7.5mΩ G

AN-1005

Abstract: TO-251AA
Contextual Info: PD - 97284 AUTOMOTIVE MOSFET Features l l l l l l IRLR3114ZPbF IRLU3114ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Logic Level D VDSS = 40V