MOSFET CAPACITANCE Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

Contextual Info: BLV4N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 2.2Ω Ω • Simple Drive Requirements ID 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Contextual Info: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain

UPS 380v

Abstract: 20n60c power switching
Contextual Info: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

Contextual Info: FDS4685 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

Contextual Info: Formosa MS SMD MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

ufn1130

Contextual Info: POWER MOSFET TRANSISTORS 700 Volt, 3.5 Ohm N-Channel UFNU3° FEATU RES DESCRIPTION • • • • • • This new U nitrode power MOSFET utilizes the latest high voR&ge advanced technology The efficient design achieves a very low Rosion. a n d a & ig ti tranSe^rvductance.

Contextual Info: Si4836DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 D TrenchFETr Power MOSFET D PWM Optimized rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 APPLICATIONS 0.004 @ VGS = 2.5 V 22 0.005 @ VGS = 1.8 V 19 D Low Voltage Synchronous Rectfication

Contextual Info: 2SK3474-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=23A High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 20 IAV [A] EAV [mJ] Features 25 200 150 100 N-CHANNEL SILICON POWER MOSFET

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

balun transformer 75 ohm

Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH
Contextual Info: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS

Contextual Info: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM60 VDSS RDS on ID 600V < 0.055Ω 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

pulse transformer bv 070

Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation

Contextual Info: ECH8652 Ordering number : ENA0935 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8652 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.

Contextual Info: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize

GS 069 pwm

Abstract: fan5018 AN-6003 FAN5009 FAN5009M FAN5009MP FAN5019 FDD6696 VR10
Contextual Info: www.fairchildsemi.com FAN5009 Dual Bootstrapped 12V MOSFET Driver Features General Description • Drives N-channel High-Side and Low-Side MOSFETs in a synchronous buck configuration • 12V High-Side and 12V Low-Side Drive • Internal Adaptive “Shoot-Through” Protection

IXUC200N055

Abstract: 123B16
Contextual Info: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC200N055 VDSS = 55 V ID25 = 200 A Ω RDS on = 5.1 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous

Z 728

Abstract: 15N80Q IXFH15N80Q 15N80
Contextual Info: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings

D 1666

Abstract: NSFJ340
Contextual Info: Technical Data NSFJ340 POWER MOSFET N CHANNEL 10 AMPERE 400 VOLTS 0.55 Ω • REPETITIVE AVALANCHE RATINGS • LOW RDS ON • LOW DRIVE REQUIREMENT • DYNAMIC TO-66 dv/dt RATING ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters / Test Conditions