MOSFET BA 95 S Search Results

ut3055

Abstract: diode BA 158 mosfet BA 95 S
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. „ SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source „ ORDERING INFORMATION

MAX1640ESE

Abstract: N and P MOSFET
Contextual Info: ADVANCE INFORMATION JWÆXAJVK All information in this data sheet is preliminary and subject to change. High-Efficiency, Switch-Mode Current Source 10/96 The MAX1640/MAX 1641 are high-efficiency switch­ mode current sources intended for microprocessorco n tro lle d ba ttery ch a rg e rs and va ria b le -lo a d

Contextual Info: SKHI 21A R . Absolute Maximum Ratings Symbol Conditions R^954&5 R^9KK4&5 b9H1M?HB)( /9? ,H?BI '9B1@J( ?%&4O E5?H1 )&J5@B '9B1O 8D&J2: +H1?H1 ?(@L >H%%(51 +H1?H1 @'(%@J( >H%%(51 4@YO )0&1>2&5J K%([H(5>I G9BB(>19% (4&11(% '9B1@J( )(5)( @>%9) 12( E^_/ R@1( 9K %&)( @5$ K@BB 9K '9B1@J( )(>95$@%I

IRF7506

Abstract: marking code EA SMD MOSFET
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching

utd454

Abstract: on47
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD454 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTD454 is an N-channel enhancement MOSFET providing perfect RDS ON and low gate charge with UTC advanced technology. The UTC UTD454 is intended for being used in PWM, load

10mhz mosfet

Abstract: IRF7534D1 3A 300V Schottky Diode
Contextual Info: PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode HEXFET Co-packaged power MOSFET and Schottky diode ● Ultra Low On-Resistance MOSFET ● Trench technology TM Footprint ● Micro8 ● Available in Tape & Reel Description ● 1 8 K A 2 7 K S 3 6 D G 4 5

IXDN602

Abstract: IXDI602 IXDN602PI IXDN602SIA IXDF602 recommended land pattern for soic 8pin ixdn602si IXDI602PI IXDN602SIATR
Contextual Info: IXD_602 2-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 2A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

diode schottky 117c

Abstract: IRF7101 IRF7421D1
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode

Contextual Info: International k?r Rectifier PD-9.613A IRFBE30 HHXFET Power MOSFET • • • • • IINR 4Ö554S2 0014=174 623 INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

IRF7311

Abstract: IRF7101 DIODE smd marking 82a
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1435 IRF7311 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 30V

IRF7504

Abstract: rce marking
Contextual Info: PD - 9.1267G IRF7504 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2 VDSS = -20V

ir*526

Abstract: smd diode schottky code marking 2F
Contextual Info: P D - 9.1649 International IGR Rectifier IRF7526D1 PRELIMINARY FETKY • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint Description MOSFET and Schottky Diode

Si5441DC

Abstract: Si5441DC-T1-E3
Contextual Info: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21

Contextual Info: SiP12101 Vishay Siliconix High Performance Step-Down DC-DC Converter With Adjustable Output Voltage DESCRIPTION FEATURES The SiP12101 is a high efficiency 600 mA step down converter with internal low on resistance power MOSFET switch and synchronous rectifier transistors. It is designed to

smd diode S6 66a

Abstract: REGULATOR SMD MARKING CODE ASC
Contextual Info: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

71055

Abstract: MAX 71055 D 71055 Si5441DC Si5441DC-T1
Contextual Info: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free

D 71055

Abstract: Si5441DC MAX 71055 71055
Contextual Info: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 –20 20 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BA XX

230v ac dc smps circuit

Abstract: EF20 TRANSFORMER FSEZ2037 A114 C101 FSEZ2037NY JESD22 smps cordless charger 12v 50 A battery charger smps schematic 12v 5 A battery charger smps schematic
Contextual Info: FSEZ2037 Low-Power Green-Mode PWM with Power MOSFET Integrated without Secondary Feedback CC Features Description ƒ Linearly Decreasing PWM Frequency ƒ Green Mode Under Light-load and Zero-load This highly integrated PWM controller provides several features to enhance the performance of low-power

EE16 bobbin

Abstract: A114 C101 EE16 FSEZ2007 FSEZ2007NY JESD22 230v ac dc smps circuit
Contextual Info: FSEZ2007 Low-Power Green-Mode PWM with Power MOSFET Integrated without Secondary Feedback CC Features Description ƒ Linearly Decreasing PWM Frequency ƒ Green Mode Under Light-Load and Zero-Load This highly integrated PWM controller provides several features to enhance the performance of low-power

ansi-y14.5m-1994

Abstract: dg9233dy-t1-e3
Contextual Info: DG9232, DG9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch DESCRIPTION The DG9232, 9233 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low on-resistance (RDS(on):

Contextual Info: DG9232, DG9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch DESCRIPTION The DG9232, 9233 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low on-resistance (RDS(on):

ansi-y14.5m-1994

Contextual Info: DG9262, DG9263 Vishay Siliconix Low-Voltage Dual SPST Analog Switch DESCRIPTION FEATURES The DG9262, DG9263 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low

SG6961SZ

Abstract: SG6961 FAN6961 ZCD pwm controller JESD22-A114 JESD22-A115 SG6961DZ
Contextual Info: SG6961 Critical Conduction Mode PFC Controller Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Description Boundary Mode PFC Controller Low Input Current THD Controlled On-Time PWM Zero-Current Detection Cycle-by-cycle Current Limiting Leading-Edge Blanking Instead of RC Filtering