MOSFET 9926 Search Results

FDW9926NZ

Abstract: C3245
Contextual Info: FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power

9926n

Abstract: FDW9926NZ
Contextual Info: FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power

9926N

Abstract: 9926 mosfet VGS-12V AF9926N
Contextual Info: AF9926N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching,

9926N

Abstract: 9926 SO-8 9926 mosfet AF9926N mosfet 9926 MOSFET SO-8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Contextual Info: AF9926N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching,

9926a

Abstract: FDW9926A Dual N-Channel 2.5V
Contextual Info: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

9926A

Abstract: FDW9926A
Contextual Info: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

9926A

Abstract: FDW9926A
Contextual Info: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

9926A

Abstract: FDW9926A
Contextual Info: FDW9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: MOSFET SMD Type Dual N-Channel MOSFET SI9926DY • Features TSSOP-8 ● RDS on ≤ 0.032 Ω @ VGS = 4.5 V Unit: mm ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2

9926b

Contextual Info: MOSFET SMD Type Dual N-Channel MOSFET SI9926BDY • Features SOP-8 ● RDS on = 0.027 Ω @ VGS = 4.5 V ● RDS(on) = 0.036 Ω @ VGS = 2.5 V. D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G2 G1 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol

9926 mosfet

Abstract: F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926
Contextual Info: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 FHK9926 DESCRIPTION & FEATURES 概述及特點 SOT-26 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻

0805 footprint

Abstract: AN-1356 GRM216R61E105KA12B LM2743 TSSOP14 9926b DIODE footprint
Contextual Info: National Semiconductor Application Note 1356 Ricardo Capetillo October 2005 Introduction due to the lower forward drop than the low side MOSFET body diode conducting during the anti-shoot through period. Select a Schottky diode that maintains a forward drop

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJ9926 N-Channel Enhancement-Mode MOSFET SOP8 FEATURE z z Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance z High Power and Current handing capability

9926 mosfet

Abstract: OZ 9926 9926 BATTERY Si9926DY 9926 SO-8 F 9926 MOSFET
Contextual Info: Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ9926 N-Channel Enhancement-Mode MOSFET SOT-23 FEATURE z Advanced trench process technology z High Density Cell Design for Ultra Low On-Resistance z High Power and Current handing capability

Contextual Info: Advanced Power Electronics Corp. AP9926GEO-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Supports 2.5V Gate Drive D1 Low On-resistance G1 D2 BV DSS 20V R DS ON G2 28mΩ ID RoHS-compliant, halogen-free S1 4.6A S2

9926gm

Abstract: AP9926GM
Contextual Info: AP9926GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 BVDSS 20V RDS ON 30mΩ D2 ▼ Capable of 2.5V gate drive D1 D1 ▼ Surface mount package ID G2 SO-8 S1 G1 6A S2 Description D2

9926A

Abstract: APM9926A
Contextual Info: APM9926A Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely S1 1 8 D D 1 8 D G1 2 7 D S1 2 7 S2 S2 3 6 D S1 3 6 S2 G2 4

9926a

Abstract: APM9926A 8A330 G1 5C 22 330
Contextual Info: APM9926A Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=34mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely S1 1 8 D D1 1 8 G1 2 7 D S1 2 7 S2 S2 3 6 D S1 3 6 S2 G2 4

2n3904 application

Abstract: overcharge protection circuit nimh overcharge protection circuit nimh 10 cell 9926 mosfet 9 VOLT HIGH POWER BATTERY 9926 transistor 9926 BATTERY AIC1801 2N3904 bth 100
Contextual Info: AN98-BM01EN May 1998 Battery Charging Protection Design Using AIC1801 Jacob Wu Abstract In recent years, the Li-ion battery is getting more and more popular in applications of rechargeable power systems. For cellular phones, one-cell Li-ion battery power system is most widely used. Although

9926b

Abstract: 6TPD470 LM2746 AN-1385 GRM216R61E105KA12B TSSOP14
Contextual Info: National Semiconductor Application Note 1385 Thatcher Klumpp May 2005 Introduction Additional Footprints This application note describes the LM2746 printed circuit board PCB design and provides an example typical application circuit. The demo board allows component design

9926b

Abstract: AN-1379 GRM216R61E105KA12B TSSOP14
Contextual Info: National Semiconductor Application Note 1379 Maurice Eaglin April 2006 Introduction Additional Footprints This application notes describes the LM2745/8 printed circuit board PCB design and provides an example typical application circuit. The demo board allows component design

9926b

Abstract: AN-1449 GRM216R61E105KA12B LM2747 TSSOP14 Capacitor MLCC 1210 10uF 25V AN1449 C12and 9926BDY
Contextual Info: National Semiconductor Application Note 1449 Maurice Eaglin April 2006 Introduction Additional Footprints This application notes describes the LM2747 printed circuit board PCB design and provides an example typical application circuit. The demo board allows component design