MOSFET 9452 Search Results
MOSFET 9452 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
| TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
MOSFET 9452 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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irf1010 applicationsContextual Info: PD-94526 IRF1503 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature |
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PD-94526 IRF1503 O-220AB. O-220AB IRF1010 O-220AB irf1010 applications | |
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Contextual Info: PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax |
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IRF1302S IRF1302L AN-994. | |
PD-94526A
Abstract: IRF1503
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PD-94526A IRF1503 O-220AB IRF1010 O-220AB PD-94526A IRF1503 | |
IRF1302L
Abstract: IRF1302S
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IRF1302S IRF1302L AN-994. IRF1302L IRF1302S | |
IRF1302L
Abstract: IRF1302S
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IRF1302S IRF1302L AN-994. IRF1302L IRF1302S | |
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Contextual Info: PD-94526A IRF1503 AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET 14V Automotive Electrical Systems 14V Electronic Power Steering D VDSS = 30V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature |
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PD-94526A IRF1503 IRF1010 O-220AB | |
IRF1503
Abstract: irf150
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PD-94526A IRF1503 IRF1010 O-220AB IRF1503 irf150 | |
IRFI840G
Abstract: IRFIB5N50L
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4522A IRFIB5N50L O-220 IRFI840G O-220AB IRFI840G IRFIB5N50L | |
U38-15
Abstract: IRLR3815 IRLU3815 MOSFET IRF 635
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IRLR3815 IRLU3815 AN-994. U38-15 IRLR3815 IRLU3815 MOSFET IRF 635 | |
IRFIB5N50LContextual Info: PD - 94522B IRFIB5N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.67Ω 500V Features and Benefits |
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94522B IRFIB5N50L O-220 12-Mar-07 IRFIB5N50L | |
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Contextual Info: PD - 94522B IRFIB5N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.67Ω 500V Features and Benefits |
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94522B IRFIB5N50L O-220 08-Mar-07 | |
IRFIB5N50LContextual Info: PD - 94522B IRFIB5N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.67Ω 500V Features and Benefits |
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94522B IRFIB5N50L O-220 I840G O-220AB IRFIB5N50L | |
B1370
Abstract: b1370 e mosfet marking l R B1370
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IRFIB5N50L IRFI840G O-220 B1370 b1370 e mosfet marking l R B1370 | |
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
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SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 | |
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irfr3518
Abstract: AN1001 EIA-541 IRFU3518
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IRFR3518 IRFU3518 AN1001) AN-994. irfr3518 AN1001 EIA-541 IRFU3518 | |
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Contextual Info: PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See |
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IRFR3518 IRFU3518 AN1001) AN-994. | |
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Contextual Info: PD - 94524 Automotive Die IRLC2908 HEXFET Power MOSFET Die in Wafer Form l l l 100% Tested at Probe Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack Ultra Low On-Resistance Key Electrical Characteristics D-Pak package Parameter V(BR)DSS |
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IRLC2908 | |
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Contextual Info: AP9452GG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower gate charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G ▼ RoHS Compliant 4A S Description D |
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AP9452GG-HF OT-89 | |
9452 sot-89
Abstract: mosfet 9452 gs 9452 9452 marking code CODE 9452 SOT-89 9452 mosfet AP9452GG-HF
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AP9452GG-HF OT-89 9452 sot-89 mosfet 9452 gs 9452 9452 marking code CODE 9452 SOT-89 9452 mosfet AP9452GG-HF | |
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Contextual Info: AP9452GG RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower gate charge BVDSS D 20V RDS ON Capable of 2.5V gate drive Single Drive Requirement 50m ID G 4A S Description D Advanced Power MOSFETs from APEC provide the |
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AP9452GG OT-89 | |
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Contextual Info: AP9452GG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower gate charge BVDSS D 20V RDS ON Capable of 2.5V gate drive Single Drive Requirement 50m ID G RoHS Compliant 4A S Description D Advanced Power MOSFETs from APEC provide the |
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AP9452GG-HF OT-89 | |
mosfet 9452
Abstract: 9452 sot-89 gs 9452 sot-89 MARKING CODE 4A sot-89 9452 9452 mosfet AP9452GG 4A SOT89
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AP9452GG OT-89 mosfet 9452 9452 sot-89 gs 9452 sot-89 MARKING CODE 4A sot-89 9452 9452 mosfet AP9452GG 4A SOT89 | |
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Contextual Info: □ 1XYS IXFH 22N55 ’reliminary Data HiPerFET“Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low t„ Symbol Test Conditions V*D SS ^ = 25°C to 150°C 550 V VDGR ^ = 25°C to 150°C; RGS = 1 M£2 550 V V GS Continuous ±20 V vw GSM |
OCR Scan |
22N55 | |
22N55Contextual Info: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW |
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