MOSFET 800V 50A Search Results
MOSFET 800V 50A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
MOSFET 800V 50A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SK3529-01Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3529-01 800V/1.9Ω/7A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current |
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2SK3529-01 00V/1 O-220 25unless Tch150 MT5F12594 2SK3529-01 | |
2SK3530
Abstract: 2SK3530-01MR
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2SK3530-01MR 00V/1 O-220F 25unless Tch150 MT5F12296 2SK3530 2SK3530-01MR | |
Contextual Info: Advanced SSF6N80A Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = 2 . 0 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.472 £1 (Typ.) |
OCR Scan |
SSF6N80A | |
ssh6n80a
Abstract: SSH6N80AS SSH6N80
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OCR Scan |
SSH6N80AS ssh6n80a SSH6N80AS SSH6N80 | |
Contextual Info: Advanced SSS6N80A Power MOSFET FEATURES - 800 V ^DS on = 2.0 Q. Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.472 £1 (Typ.) |
OCR Scan |
SSS6N80A | |
sic mosfet
Abstract: Microsemi MOSFET 1200V
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APTMC120HRM40CT3G sic mosfet Microsemi MOSFET 1200V | |
3 phase pfc
Abstract: CCS050M12CM2 Cree SiC MOSFET
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CCS050M12CM2 CCS050M12CM2 3 phase pfc Cree SiC MOSFET | |
Contextual Info: CCS050M12CM2 VDS 1.2 kV 1.2kV, 50A Silicon Carbide Six-Pack Three Phase Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 25 mΩ EOFF (TJ = 150˚C) 0.6 mJ Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current |
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CCS050M12CM2 CCS050M12CM2 | |
APTM120U20D
Abstract: APTM120A20D
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APTM120A20D APTM120U20D APTM120A20D | |
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
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100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter | |
Contextual Info: APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 VDSS = 1200V RDSon = 200mΩ typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies |
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APTM120A20SG APTM120A20SG | |
Contextual Info: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET |
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QJD1210011 Amperes/1200 QJD1210011 | |
Contextual Info: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP) |
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QJD1210006 Amperes/1200 QJD1210006 | |
Contextual Info: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP) |
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QJD1210007 Amperes/1200 QJD1210007 | |
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Contextual Info: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET |
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QJD1210011 Amperes/1200 QJD1210011 | |
Contextual Info: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET |
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QJD1210010 Amperes/1200 QJD1210010 | |
Contextual Info: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET |
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QJD1210011 Amperes/1200 QJD1210011 | |
1000 watts ups circuit diagram with detail
Abstract: high frequency induction welder
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QJD1210011 Amperes/1200 QJD1210011 1000 watts ups circuit diagram with detail high frequency induction welder | |
Contextual Info: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 10 11 12 X B M N E G DETAIL "B" |
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QJD1210011 Amperes/1200 | |
Contextual Info: QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET |
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QJD1210011 Amperes/1200 QJD1210011 | |
Contextual Info: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET |
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QJD1210010 Amperes/1200 QJD1210010 | |
Contextual Info: QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET |
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QJD1210010 Amperes/1200 QJD1210010 | |
QJD1210006
Abstract: DIAGRAM OF 5000 volts power inverter
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QJD1210006 Amperes/1200 simplif25 DIAGRAM OF 5000 volts power inverter | |
c 103 mosfet
Abstract: silicon carbide 1200-VOLT QJD1210006
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QJD1210006 Amperes/1200 c 103 mosfet silicon carbide 1200-VOLT |