MOSFET 800 V Search Results

P4NK80Zfp

Abstract: p4nk80z d4nk80z p4nk80 d4nk8 STP4NK80ZFP STD4NK80Z-1 STD4NK80Z STD4NK80ZT4 STP4NK80Z
Contextual Info: STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < 3.5 < 3.5

f11nm80

Abstract: p11nm80 B11NM80 STP11NM80 W11NM80 f11n STB11NM80 STB11NM80T4 STF11NM80 STW11NM80
Contextual Info: STP11NM80 - STB11NM80 STF11NM80 - STW11NM80 N-CHANNEL 800V - 0.35Ω - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET TARGET DATA TYPE STP11NM80 STF11NM80 STB11NM80 STW11NM80 VDSS RDS on Rds(on)*Qg 800 800 800 800 < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω

p7nc80zf

Abstract: p7nc80 P7NC80Zfp p7nc80z B2 Zener P7NC L9 Zener STB7NC80Z STB7NC80Z-1 STB7NC80ZT4
Contextual Info: STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 • ■ ■ ■ ■ VDSS RDS on 800 800 800 800 < < < < V V V V 1.5 Ω

P7NK80

Abstract: p7nk80zfp P7NK80Z p7nk80zf STP7NK80ZFP b7nk80z p7nk STP7NK80Z STB7NK80Z STB7NK80Z-1
Contextual Info: STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I2PAK/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 800 800 800 < 1.8 Ω

f3nk80z

Abstract: p3nk80z D3NK80Z f3nk80z DATA D3NK8 f3nk80 STD3NK80ZT4 STF3NK80Z STP3NK80Z STD3NK80Z
Contextual Info: STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 800 800 800 800

Contextual Info: FQA7N80C_F109 N-Channel QFET MOSFET 800 V, 7 A, 1.9 Ω Features Description • 7.0 A, 800 V, RDS on = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar

p7nk80zfp

Abstract: P7NK80Z P7NK80 B7NK80Z STP7NK80ZFP p7nk80zf STB7NK80Z-1
Contextual Info: STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I2PAK/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 • ■ ■ ■ ■ ■ VDSS R DS on ID Pw 800 800 800 800 < 1.8 Ω

Contextual Info: FQP7N80C / FQPF7N80C N-Channel QFET MOSFET 800 V, 6.6 A, 1.9 Ω Description Features • 6.6 A, 800 V, RDS on = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar

Contextual Info: FQA10N80C_F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Ω Features Description • 10 A, 800 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe

Contextual Info: FQP6N80C / FQPF6N80C N-Channel QFET MOSFET 800 V, 5.5 A, 2.5 Ω Description Features • 5.5 A, 800 V, RDS on = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar

Contextual Info: FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET 800 V, 8.0 A, 1.55 Ω Description Features • 8.0 A, 800 V, RDS on = 1.55 Ω (Max.) @ VGS = 10 V, ID = 4.0 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar

CMAC

Contextual Info: PRELIMINARY SPECIFICATION CM2002-800 Product Description High Linearity MOSFET Quad Mixer For GSM800 and Cellular BTS The CM2002-800 is a high linearity, passive MOSFET Quad Mixer Features for GSM800 and Cellular Base Station Receivers, exhibiting high •

18NM80

Abstract: W18NM80 STW18NM80 STB18NM80 STP18NM80 15421 stf18nm80
Contextual Info: STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB18NM80 800 V < 0.295 Ω 17 A STF18NM80 800 V < 0.295 Ω 17 A STP18NM80 800 V < 0.295 Ω

F7NM80

Abstract: D7NM8 D7NM80 P7NM80 STD7NM80 TO-251 footprint STD7NM80-1 STP7NM80 STF7NM80
Contextual Info: STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh Power MOSFET Features Type VDSS RDS on ID STD7NM80 800 V < 1.05 Ω 6.5 A STD7NM80-1 800 V < 1.05 Ω 6.5 A STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80

6N80

Contextual Info: Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A VDSS ID25 RDS on 800 V 800 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS

Contextual Info: FQB9N50C N-Channel QFET MOSFET 500 V, 9 A, 800 mΩ Features Description • 9 A, 500 V, RDS on = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced

P8NK80ZFP

Abstract: w8nk80z P8NK80 p8nk80z p8nk p8nk8 L9 Zener STW8NK80Z STP8NK80Z STP8NK80ZFP
Contextual Info: STP8NK80Z - STP8NK80ZFP STW8NK80Z N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP8NK80Z STP8NK80ZFP STW8NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V 800 V < 1.5 Ω < 1.5 Ω < 1.5 Ω

Contextual Info: FQA10N80C_F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Ω Features Description • 10 A, 800 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 44 nC) produced using Fairchild Semiconductor’s proprietary planar

p10nk80zfp

Abstract: P10NK80 p10nk80z w10nk80z p10nk80zfp equivalent w10nk80 mosfet P10NK80Z STW10NK80Z STP10NK80ZFP p10nk
Contextual Info: STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP10NK80Z STP10NK80ZFP STW10NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω

F3NK80Z

Abstract: 9565 p3nk80z D3NK8 D3NK80Z STD3NK80Z STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z
Contextual Info: STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z

6N80

Abstract: 6N80A JM24A JM-24 N80A JM-24A
Contextual Info: VDSS Standard Power MOSFET IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS on 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS

f3nk80z

Abstract: D3NK8
Contextual Info: STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z

Contextual Info: FQP3N80C / FQPF3N80C N-Channel QFET MOSFET 800 V, 3.0 A, 4.8 mΩ Features Description • 3.0 A, 800 V, RDS on = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 13 nC) planar stripe and DMOS technology. This advanced

Contextual Info: Product Specification PE4124 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4124 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range