MOSFET 75V 120A Search Results

P140NF75

Abstract: STP140NF75 STB140NF75T4 B140NF75 STB140NF75 STB140NF75-1 p140nf
Contextual Info: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)

Contextual Info: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)

p140nf

Abstract: p140n P140NF75
Contextual Info: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET Power MOSFET Features Type VDSS RDS on (max.) ID STB160N75F3 75V 3.7 mΩ 120 A(1) 1 STP160N75F3 75V 4 mΩ 120 A(1) STW160N75F3 75V 4 mΩ 120 A(1)

STW160N75F3

Abstract: STP160N75F3 160N75F3 JESD97 STB160N75F3 VDD-375
Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET Power MOSFET Features Type VDSS RDS on (max.) ID STB160N75F3 75V 3.7 mΩ 120 A(1) 3 1 STP160N75F3 75V 4 mΩ 120 A(1) STW160N75F3 75V 4 mΩ 120 A(1)

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

160N75F3

Abstract: STP160N75F3 JESD97 STB160N75F3 STW160N75F3 m 0409 STP160
Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

STW220NF75

Abstract: Mosfet 75V 120A
Contextual Info: STW220NF75 N-CHANNEL 75V - 0.004 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW220NF75 • ■ ■ VDSS RDS on ID 75V <0.0044Ω 120A(*) TYPICAL RDS(on) = 0.004Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of

Power Mosfet 75V 120A

Abstract: STW220NF75
Contextual Info: STW220NF75 N-CHANNEL 75V - 0.004 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW220NF75 VDSS RDS on ID 75V <0.0044Ω 120A(*) TYPICAL RDS(on) = 0.004Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED • ■ ■ DESCRIPTION This Power MOSFET is the latest development of

Mosfet

Abstract: SSPL7508
Contextual Info: SSPL7508 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 6.25mohm(typ.) ID 120A ① TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and

FDP023N08

Abstract: FDP023N08B
Contextual Info: FDP023N08B_F102 N-Channel PowerTrench MOSFET 75V, 242A, 2.35mΩ Features Description • RDS on = 1.96mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored

Contextual Info: FDB031N08 N-Channel PowerTrench tm MOSFET 75V, 235A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast switching speed

fda032n08

Abstract: Power Mosfet 75V 120A
Contextual Info: FDA032N08 tm N-Channel PowerTrench MOSFET 75V, 235A, 3.2mΩ Features Description • RDS on = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed

Contextual Info: FDP032N08 N-Channel PowerTrench tm MOSFET 75V, 235A, 3.2mΩ Features Description • RDS on = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast switching speed

FDB08

Abstract: FDB088N08
Contextual Info: FDB088N08 N-Channel PowerTrench MOSFET 75V, 85A, 8.8mΩ Features Description • RDS on = 7.3 mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed

FDB031N08

Contextual Info: FDB031N08 N-Channel PowerTrench tm MOSFET 75V, 235A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast switching speed

FDP032N08

Contextual Info: FDP032N08 N-Channel PowerTrench MOSFET 75V, 235A, 3.2mΩ Features Description • RDS on = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench® process that has been espe- • Fast switching speed

Contextual Info: AP96T07GS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D 75V RDS ON Lower On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 4.5m 120A S Description

Contextual Info: AP96T07GP-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 75V 4.2m 120A S Description

Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N075T2 IXTP120N075T2 VDSS ID25 = 75V = 120A Ω ≤ 7.7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75

IXTP120N075T2

Abstract: Power Mosfet 75V 120A IXTA120N075T2 to220 3 lead plastic package to220 DS100051
Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N075T2 IXTP120N075T2 VDSS ID25 = 75V = 120A Ω ≤ 7.7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75

Contextual Info: STW220NF75 N-CHANNEL 75V - 0.004 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW220NF75 VDSS RDS on ID 75V <0.0044Ω 120A(*) ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s

Contextual Info: FDP032N08 N-Channel PowerTrench tm MOSFET 75V, 235A, 3.2mΩ Features Description • RDS on = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on)