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    MOSFET 7124 Search Results

    MOSFET 7124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet

    MOSFET 7124 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LF PA K 56 BUK7Y12-40E N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		BUK7Y12-40E LFPAK56 PDF

    code marking 40E

    Contextual Info: LF PA K 56 BUK7Y12-40E N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		BUK7Y12-40E LFPAK56 code marking 40E PDF

    Si4404DY

    Abstract: Si4404DY-T1-E3
    Contextual Info: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4404DY Si4404DY-T1-E3 Si4404DY-T1-GE3 18-Jul-08 PDF

    Contextual Info: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4404DY Si4404DY-T1-E3 Si4404DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SUB85N03-04P

    Abstract: SUP85N03-04P S-40101 S40101
    Contextual Info: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested


    Original     		SUP/SUB85N03-04P O-263 O-220AB SUB85N03-04P SUP85N03-04P O-220AB) O-263, SUB85N03-04P SUP85N03-04P S-40101 S40101 PDF

    SUB85N03-04P

    Abstract: SUP85N03-04P S4010 s40101
    Contextual Info: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested


    Original     		SUP/SUB85N03-04P O-263 O-220AB SUB85N03-04P SUP85N03-04P O-220AB) O-263, SUB85N03-04P SUP85N03-04P S4010 s40101 PDF

    driver IC for IRF540 MOSFET

    Abstract: MOSFET 7121 mosfet 7124 12v incandescent lamp driver
    Contextual Info: MIC5020 IMCaSL Current-Sensing Low-Side MOSFET Driver General Description Features The MIC5020 low-side MOSFET driver is designed to oper­ ate at frequencies greater than 100kHz 5kHz PWM tor 2% to 100% duty cycle and is an ideal choice for high-speed applications such as motor control, SMPS (switch mode


    OCR Scan     		MIC5020 100kHz TheMIC5020 2000pF 175ns. driver IC for IRF540 MOSFET MOSFET 7121 mosfet 7124 12v incandescent lamp driver PDF

    s40101

    Abstract: SUB85N03-04P SUP85N03-04P
    Contextual Info: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested


    Original     		SUP/SUB85N03-04P O-263 O-220AB SUB85N03-04P SUP85N03-04P O-220AB) O-263, s40101 SUB85N03-04P SUP85N03-04P PDF

    Contextual Info: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4404DY Si4404DY-T1-E3 Si4404DY-T1-GE3 11-Mar-11 PDF

    Contextual Info: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4404DY Si4404DY-T1-E3 Si4404DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D


    Original     		Si4404DY Si4404DY-T1 Si4404DY-T1--E3 18-Jul-08 PDF

    Si1302DL

    Abstract: Si1302DL-T1-GE3 S83040
    Contextual Info: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = - 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET SOT-323 SC-70 (3-LEADS)


    Original     		Si1302DL OT-323 SC-70 Si1302DL-T1-E3 Si1302DL-T1-GE3 18-Jul-08 S83040 PDF

    71247

    Abstract: SI4404DY
    Contextual Info: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D


    Original     		Si4404DY Si4404DY-T1 Si4404DY-T1--E3 S-50694--Rev. 18-Apr-05 71247 PDF

    Si4404DY

    Abstract: Si4404DY-T1
    Contextual Info: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 23 0.008 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant D SO-8 S 1 8 D


    Original     		Si4404DY Si4404DY-T1 Si4404DY-T1--E3 08-Apr-05 PDF

    Contextual Info: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si1302DL 2002/95/EC SC-70 Si1302DL-T1-E3 Si1302DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Si1302DL

    Abstract: diode 2140
    Contextual Info: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si1302DL 2002/95/EC SC-70 Si1302DL-T1-E3 Si1302DL-T1-GE3 18-Jul-08 diode 2140 PDF

    AN813

    Abstract: Si1302DL sc70-3 PCB PAD
    Contextual Info: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si1302DL 2002/95/EC SC-70 Si1302DL-T1-E3 Si1302DL-T1-GE3 11-Mar-11 AN813 sc70-3 PCB PAD PDF

    Si1302DL

    Abstract: SI1302DL-T1-E3 marking code
    Contextual Info: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = - 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si1302DL 2002/95/EC SC-70 Si1302DL-T1-E3 Si1302DL-T1-GE3 18-Jul-08 SI1302DL-T1-E3 marking code PDF

    SI1302DL-T1-E3 marking code

    Abstract: si1302 F MARKING 6PIN
    Contextual Info: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si1302DL 2002/95/EC SC-70 Si1302DL-T1-E3 Si1302DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI1302DL-T1-E3 marking code si1302 F MARKING 6PIN PDF

    Contextual Info: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES RDS(on) () ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		Si1302DL 2002/95/EC SC-70 Si1302DL-T1-E3 Si1302DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4488DY

    Abstract: S3036
    Contextual Info: Si4488DY New Product Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 150 0.050 @ VGS = 10 V 5.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si4488DY S-01284--Rev. 12-Jun-00 S3036 PDF

    Contextual Info: Si4488DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 150 0.050 @ VGS = 10 V 5.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4488DY Si4488DY-T1 (with Tape and Reel) N-Channel MOSFET


    Original     		Si4488DY Si4488DY-T1 18-Jul-08 PDF

    Si4488DY

    Abstract: Si4488DY-T1
    Contextual Info: Si4488DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 150 0.050 @ VGS = 10 V 5.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4488DY Si4488DY-T1 (with Tape and Reel) N-Channel MOSFET


    Original     		Si4488DY Si4488DY-T1 08-Apr-05 PDF

    Si4488DY

    Abstract: Si4488DY-T1
    Contextual Info: Si4488DY Vishay Siliconix N-Channel 150-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 150 0.050 @ VGS = 10 V 5.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4488DY Si4488DY-T1 (with Tape and Reel) N-Channel MOSFET


    Original     		Si4488DY Si4488DY-T1 S-03951--Rev. 26-May-03 PDF