MOSFET 700V 4A Search Results

4N70F

Contextual Info: HY4N70T / HY4N70FT 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70K-MK Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

8n70

Abstract: PIN DIODE DRIVER CIRCUITS MOSFET 700V 10A 700v 4A mosfet 8N70L-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

700v 4A mosfet

Abstract: IDM32
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N70 Preliminary Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N70K-MT Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N70K-MT is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N70ZL Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N70ZL is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N70Z Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

8n70

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N70 Preliminary Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand

AOTF11N70L

Abstract: AOTF11N70 800V15 AOT11N70L AOT11N70
Contextual Info: AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-E Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N70-CB Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This

Contextual Info: AOWF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOWF11N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: AOWF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOWF11N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

diode b10

Abstract: MOSFET 700V 10A TSM8N70 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A
Contextual Info: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.9 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

MOSFET 700V 10A

Abstract: MOSFET 700V TO 220 TSM8N70CI MOSFET 700V 4A ITO-220 700v 4A mosfet 700v 10A mosfet
Contextual Info: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.85 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)( )(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: AP04N60H-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ Fast Switching Characteristic RDS ON 2.8Ω ▼ Simple Drive Requirement ID D 4A G ▼ RoHS Compliant & Halogen-Free