MOSFET 6993 Search Results

MOSFET 6993 Result Highlights (5)

Part	Manufacturer	Description	Download
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet

MOSFET 6993 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®	Original	Si7611DN Si7611DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®	Original	Si7611DN Si7611DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®	Original	Si7611DN Si7611DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si7611DN-T1-GE3 Contextual Info: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®	Original	Si7611DN Si7611DN-T1-GE3 11-Mar-11	PDF
Contextual Info: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®	Original	Si7611DN Si7611DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4104 Abstract: SI4104DY Contextual Info: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • TrenchET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT	Original	Si4104DY Si4104DY-T1-E3 18-Jul-08 Si4104	PDF
SI7611dn-T1-gE3 Contextual Info: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®	Original	Si7611DN Si7611DN-T1-GE3 18-Jul-08	PDF
Contextual Info: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®	Original	Si7611DN Si7611DN-T1-GE3 11-Mar-11	PDF
Si4104DY Abstract: si4104 Contextual Info: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • TrenchET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT	Original	Si4104DY Si4104DY-T1-E3 08-Apr-05 si4104	PDF
Si7611DN-T1-GE3 Contextual Info: New Product Si7611DN Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.025 at VGS = - 10 V - 18e 0.033 at VGS = - 4.5V - 18e • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®	Original	Si7611DN Si7611DN-T1-GE3 08-Apr-05	PDF
Si3456CDV Abstract: Si3456CDV-T1-E3 Contextual Info: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch	Original	Si3456CDV Si3456CDV-T1-E3 18-Jul-08	PDF
SI3456CDV Contextual Info: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch	Original	Si3456CDV Si3456CDV-T1-E3 08-Apr-05	PDF
Si4626ADY Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	Si4626ADY Si4626ADY-T1-E3 Si4626ADY-T1-GE3 18-Jul-08	PDF
Si4626ADY Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT	Original	Si4626ADY Si4626ADY-T1-E3 08-Apr-05	PDF

Si4626ADY Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT	Original	Si4626ADY Si4626ADY-T1-E3 18-Jul-08	PDF
Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	Si4626ADY Si4626ADY-T1-E3 Si4626ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 11-Mar-11	PDF
SUP90N15-18P Abstract: SUP90N15-18P-E3 Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 11-Mar-11 SUP90N15-18P SUP90N15-18P-E3	PDF
Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	Si4626ADY Si4626ADY-T1-E3 Si4626ADY-T1-GE3 11-Mar-11	PDF
SUP90N15-18P Abstract: SUP90N15-18P-E3 Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 08-Apr-05 SUP90N15-18P SUP90N15-18P-E3	PDF
SUP90N15-18P Abstract: SUP90N15-18P-E3 Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 18-Jul-08 SUP90N15-18P SUP90N15-18P-E3	PDF
Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

MOSFET 6993 Search Results

MOSFET 6993 Result Highlights (5)

MOSFET 6993 Datasheets Context Search

Si7611DN-T1-GE3

Si4104

SI7611dn-T1-gE3

Si4104DY

Si7611DN-T1-GE3

Si3456CDV

SI3456CDV

Si4626ADY

Si4626ADY

Si4626ADY

SUP90N15-18P

SUP90N15-18P

SUP90N15-18P