MOSFET 600V 7A N-CHANNEL TO Search Results

b9nk60zd

Abstract: p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1
Contextual Info: STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET General features Type VDSS RDS on ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W

p9nk60zfdfp

Abstract: p9nk60zfd p9nk60z STB9NK60ZFD STB9NK60ZFDT4 STP9NK60ZFD STP9NK60ZFDFP p9nk60
Contextual Info: STP9NK60ZFD - STP9NK60ZFDFP STB9NK60ZFD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET TARGET DATA TYPE VDSS RDS on ID Pw STP9NK60ZFD STP9NK60ZFDFP STB9NK60ZFD 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω < 0.95 Ω 7A 7A 7A

P8NM60N

Abstract: F8NM60N STD8NM60 STP8NM60N
Contextual Info: STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N N-channel 600V - 0.56Ω - 7A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD8NM60N 650V <0.65Ω 7A STD8NM60N-1 650V <0.65Ω 7A STF8NM60N

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching

7A600V

Abstract: DB-186 195mH
Contextual Info: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

Contextual Info: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state

mosfet 600V 7A N-CHANNEL

Abstract: DB-199 DB199
Contextual Info: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

STP8NC60

Abstract: STP8NC60FP
Contextual Info: STP8NC60 STP8NC60FP N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh II MOSFET TYPE STP8NC60 STP8NC60FP • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 1.0 Ω < 1.0 Ω 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP8NC60

Abstract: STP8NC60FP
Contextual Info: STP8NC60 STP8NC60FP N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh II MOSFET TYPE STP8NC60 STP8NC60FP • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 1.0 Ω < 1.0 Ω 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP8NC60

Abstract: STP8NC60FP S1060
Contextual Info: STP8NC60 STP8NC60FP N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh II MOSFET TYPE STP8NC60 STP8NC60FP • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 1.0 Ω < 1.0 Ω 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

SVD7N60F

Abstract: TO-220F-3L
Contextual Info: SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

AOT7N60

Abstract: mosfet 600V 7A N-CHANNEL AOT12N60 AOTF12N60 AOTF7N60
Contextual Info: AOT7N60/AOTF7N60 600V, 7A N-Channel MOSFET General Description Features The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTF7N60L

Abstract: AOTF7N60 AOT7N60
Contextual Info: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

mosfet 600V 7A N-CHANNEL

Abstract: AOT4N60 AOT7N60 AOTF7N60
Contextual Info: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

F9NK60ZD

Abstract: P9NK60 P9NK60ZD STP9NK60ZD STF9NK60ZD p9nk60z B9NK60Z 150 W HID ballast DIAGRAM STB9NK60ZD
Contextual Info: STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω < 0.95 Ω 7A

p7n60

Abstract: F7N60 m2828 n60p ga 132
Contextual Info: PJP7N60 / PJF7N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 600V, RDS ON =1.2Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

N-Channel mosfet 600v 7A

Abstract: mosfet 600V 7A N-CHANNEL BLV7N60
Contextual Info: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Contextual Info: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.