MOSFET 50A 25V TO 252 Search Results

H50N03J

Abstract: MOSFET N 30V 30A 252
Contextual Info: HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H50N03J H50N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 50A 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate

APM2510N

Abstract: apm2510 apm2510n mosfet apm*2510n APM2510NU ANPEC APM2510N TO252 tr2113 A102 APM2510N equivalent APM2510NU -wk22m
Contextual Info: APM2510NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =8.5mΩ (typ.) @ VGS=10V G RDS(ON)=15mΩ (typ.) @ VGS=4.5V • • • • D Super High Dense Cell Design S Avalanche Rated Top View of TO-252 Reliable and Rugged D

APM2509NU

Abstract: STD-020C APM2509N APM2509
Contextual Info: APM2509NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A , RDS ON =7.5mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)

APM2509N

Abstract: APM2509NU
Contextual Info: APM2509NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A , RDS ON =7.5mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)

APM2510N

Abstract: apm2510 apm2510n mosfet apm*2510n APM2510NU ANPEC APM2510N TO252 STD-020C
Contextual Info: APM2510NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =8.5mΩ (typ.) @ VGS=10V RDS(ON)=15mΩ (typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)

APM2509NU

Abstract: APM2509N
Contextual Info: APM2509NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A , RDS ON =7.5mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)

Contextual Info: APM2509NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A , RDS ON =7.5mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant)

diode marking code 7

Abstract: A102 APM2505N APM2505NU STD-020C
Contextual Info: APM2505NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =4mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

apm2518n

Abstract: APM2518 TO-252 N-channel MOSFET apm2518nu APM2510N apm25 code diode transient APM251oN
Contextual Info: APM2518NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/50A, RDS ON =8mΩ (Typ.) @ VGS=10V G RDS(ON)=15mΩ (Typ.) @ VGS=4.5V • • • • Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Avalanche Rated D Lead Free and Green Devices Available

ap60l02gj

Contextual Info: AP60L02GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 25V RDS ON 12mΩ ID G 50A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

CHM6056PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM6056PAGP CURRENT  Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

Contextual Info: FU JI 2SK2689-01MR N-channel MOS-FET s t y M E i T U G a jK FAP-IIIB Series 30V > Features 50A 40W > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated T O -2 2 0 F 1 5 > Applications 2.7 3» £

Contextual Info: FUJI 2SK2688-01L,S N-channel MOS-FET IS U jM O J llä U G FAP-IIIB Series 30V > Features - 0,0IQ 50 A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier

Contextual Info: PD - 97227 IRFB4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

irfp4228pbf

Contextual Info: PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Contextual Info: PD - 97229 IRFP4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

irfb4228

Contextual Info: PD - 97227 IRFB4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Contextual Info: PD - 97229 IRFP4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

n fet 60v 50a

Abstract: 4441 mosfet 4441 equivalent
Contextual Info: F U JI 2SK2809-01 MR N -c h a n n e l M O S -F E T tM L lM E l/U G ilK F A P -IIIB S e r ie s 60 V 0 ,0 1 Q 50A 50W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier

AN-994

Contextual Info: PD - 97231A IRFS4228PbF IRFSL4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

AN-994

Contextual Info: PD - 97231 IRFS4228PbF IRFSL4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

AN-994

Abstract: IRFS4228PBF
Contextual Info: PD - 97231 IRFS4228PbF IRFSL4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

ISO 8015

Abstract: KF 520 2SK2688-01 US50A
Contextual Info: FUJI 2SK2688-01 L,S N-channel MOS-FET 30V 0,0 IQ 5 0 A 6 0 W FAP-IIIB Series > Features Outline Drawing - High Current - Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated T-PACK L T-PACK S 105 4.5 Ü -JL2. _08. > Applications -

Contextual Info: PD - 94965A IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description