MOSFET 50 V, 30 A Search Results

SUD45N05-20L

Contextual Info: SUD45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.018 @ VGS = 10 V 30 0.020 @ VGS = 4.5 V 30 VDS (V) 50 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested

Contextual Info: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V

Contextual Info: New Product SiR818ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0025 at VGS = 10 V 50 0.0030 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 39 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

Contextual Info: SiRA66DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0023 at VGS = 10 V 50 0.0031 at VGS = 4.5 V 50 Qg (Typ.) 19.2 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 S 6.15 mm

Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Si7748DP-T1-GE3

Abstract: Si7748DP si7748
Contextual Info: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET

Contextual Info: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET

D47F

Abstract: IRFH8311 PQFN footprint d020d
Contextual Info: PD - 97735C IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters

Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode MOSFET SI9435DY • Features ● 5.3 A, -30 V. RDS ON = 50 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON)

3654A

Contextual Info: PD - 97651B IRFH8324PbF VDS Vgs max RDS on max 30 V ± 20 V 4.1 (@VGS = 10V) (@VGS = 4.5V) 6.3 Qg typ. 14 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters

3654A

Abstract: IRFH8324
Contextual Info: PD - 97651A IRFH8324PbF VDS Vgs max RDS on max 30 V ± 20 V 4.1 (@VGS = 10V) (@VGS = 4.5V) 6.3 Qg typ. 14 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

Contextual Info: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits

IRFH5300TRPBF

Abstract: IRFH5300PBF irfh5300 IRFH5300TR2PBF PQFN footprint AN-1154
Contextual Info: PD -97410 IRFH5300PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.4 m 50 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) : : h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

Contextual Info: TDA7850A 4 x 50 W MOSFET quad bridge power amplifier Datasheet  production data Features • High output power capability: – 4 x 50 W/4  max. – 4 x 30 W/4  @ 14.4 V, 1 kHz, 10 % – 4 x 80 W/2  max. – 4 x 55 W/2  @ 14.4 V, 1 kHz, 10 %

060N03L

Abstract: 060n03 PG-TO251-3-1 IPD060N03L IPU060N03L IPD060N03 25 34 SMD
Contextual Info: Type OptiMOS 3 Power-Transistor IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 6 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications

4823N

Abstract: NTTFS4823N NTTFS4823NTAG NTTFS4823NTWG
Contextual Info: NTTFS4823N Power MOSFET 30 V, 50 A, Single N−Channel, m8FL Features • • • • Small Footprint 3.3 x 3.3 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses This is a Pb−Free Device http://onsemi.com

IAf630

Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p

Contextual Info: SSG4403 P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS ON 50 mΩ Ω Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION B The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and

N-Channel, 30V, 4.0A, Power MOSFET SOT-23

Contextual Info: SSS3402 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max D 30 @VGS = 10V 4.6A 30V SOT-23 G 50 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

quad N-Channel MOSFET dip package

Contextual Info: SHORT FORM CATALOG ADVANCED LINEAR DEVICES, INC. precision analog semiconductors Nano-Power • Standard & Unique Functions • User-Specified Options Small Signal MOSFET Arrays Operational Amplifiers EPAD Voltage Comparators Analog Switches CMOS Analog Timers

c 70795

Contextual Info: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A

EZ1016A

Contextual Info: FSEZ1016A Primary-Side-Regulation PWM Integrated Power MOSFET Features Description ̇ Constant-Voltage CV and Constant-Current (CC) Control without Secondary-Feedback Circuitry ̇ Accurate Constant Current Achieved by Fairchild’s Proprietary TRUECURRENT Technique

1N4007 marking CD

Contextual Info: FSEZ1216 — Primary-Side-Regulation PWM Integrated Power MOSFET Features Description ̇ Constant-Voltage CV and Constant-Current (CC) Control without Secondary-Feedback Circuitry ̇ ̇ Green Mode: Frequency Reduction at Light-Load ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇

100khz driver transformer for smps

Contextual Info: FSEZ1317A Primary-Side-Regulation PWM with POWER MOSFET Integrated Features Description • •   Low Standby Power Under 30mW   Green-Mode: Linearly Decreasing PWM Frequency This third-generation Primary-Side-Regulation PSR and highly integrated PWM controller provides several