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    MOSFET 4446 Search Results

    MOSFET 4446 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet

    MOSFET 4446 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ZXMP2120E5

    Abstract: ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC
    Contextual Info: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmp2120g4-200v200maot23-5+4zxmp2120e5ot223zxmp2120g4tazxmp2120g4tc PDF

    ZXMN0545G4TA

    Abstract: ZXMN0545G4 ZXMN0545G4TC
    Contextual Info: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmn0545g4140maot223zxmn0545g4ta+1zxmn0545g4tc PDF

    Contextual Info: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmn0545g4140maot223 PDF

    Contextual Info: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmp2120e5-200v-122maot223+2zxmp2120g4ot23-5 PDF

    ZXMP2120G4TA

    Abstract: ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4
    Contextual Info: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmp2120g4-200v200maot23-5+4zxmp2120e5ot223zxmp2120g4tazxmp2120g4tc PDF

    Contextual Info: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmp2120e5-200v-122maot223+2zxmp2120g4ot23-5 PDF

    P120

    Abstract: ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D
    Contextual Info: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmp2120e5-200v-122maot223+5zxmp2120g4ot23-5p120zxmp2120e5tafs50d PDF

    sot23-5 marking ha

    Abstract: SOT23-5 TBA
    Contextual Info: ZXMP2120E5 ADVANCE INFORMATION 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = 150mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmp2120e5-200v150maot223+4zxmp2120g4ot23-5sot23-5 marking hasot23-5 tba PDF

    Contextual Info: ZXMP2120G4 ADVANCE INFORMATION 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmp2120g4-200v200maot23-5+2zxmp2120e5ot223 PDF

    TBA 611

    Contextual Info: ZXMN0545G4 ADVANCE INFORMATION 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		zxmn0545g4140maot223zxmn0545g4ta+1tba 611 PDF

    522BS

    Abstract: BSP75GTA
    Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		bsp75g550mjot223522-bsp75gta+2bsp75gta522bs PDF

    Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		bsp75g550mjot223 PDF

    Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		bsp75n550mjot223 PDF

    BSP75N

    Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		bsp75n550mjot223 PDF

    BSP75G

    Abstract: BSP75GTA BSP75GTC
    Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		bsp75g550mjot223bsp75gta+1bsp75gtc PDF

    Contextual Info: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,


    Original     		zxmp2120ffot23f48mbhd-81541 PDF

    Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		bsp75g550mjot223 PDF

    TS16949

    Abstract: ZXMN3F30FH ZXMN3F30FHTA
    Contextual Info: ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features


    Original     		zxmn3f30fhzxmn3f30fhtad-81541ts16949 PDF

    diode marking 226

    Abstract: TS16949 ZXMN2F30FH ZXMN2F30FHTA
    Contextual Info: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		zxmn2f30fhzxmn2f30fhtad-81541diode marking 226+1ts16949 PDF

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Contextual Info: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		zxms6002g550mjd-81541ts16949+1zxms6002gta PDF

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Contextual Info: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		zxms6002g550mjd-81541ts16949+1zxms6002gta PDF

    3G32D

    Abstract: TS16949 ZXMN3G32DN8 ZXMN3G32DN8TA
    Contextual Info: ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.028 @ VGS= 10V 7.1 0.045 @ VGS= 4.5V 5.6 Description This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed. Features


    Original     		zxmn3g32dn8zxmn3g32dn8ta3g32dd-81541+1ts16949 PDF

    ZXMN2F34FHTA

    Abstract: TS16949 ZXMN2F34FH
    Contextual Info: ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		zxmn2f34fhzxmn2f34fhtad-81541ts16949 PDF

    BSP75G

    Contextual Info: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over


    Original     		bsp75g550mjot223scbsp75gdsc PDF