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    MOSFET 4446 Search Results

    MOSFET 4446 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    AM9513ADIB
    		Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    MOSFET 4446 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ZXMP2120E5

    Abstract: ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC
    Contextual Info: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120G4 -200V; 200mA OT23-5 ZXMP2120E5) OT223 OT223 ZXMP2120E5 ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC PDF

    ZXMN0545G4TA

    Abstract: ZXMN0545G4 ZXMN0545G4TC
    Contextual Info: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMN0545G4 140mA OT223 OT223 ZXMN0545G4TA ZXMN0545G4 ZXMN0545G4TC PDF

    ZXMP2120G4TA

    Abstract: ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4
    Contextual Info: ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120G4 -200V; 200mA OT23-5 ZXMP2120E5) OT223 OT223 ZXMP2120G4TA ZXMP2120G4TC ZXMP2120E5 ZXMP2120G4 PDF

    P120

    Abstract: ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D
    Contextual Info: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high


    Original     		ZXMP2120E5 -200V; -122mA OT223 ZXMP2120G4) OT23-5 OT23-5 P120 ZXMP2120E5 ZXMP2120E5TA ZXMP2120G4 FS50D PDF

    522BS

    Abstract: BSP75GTA
    Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		BSP75G 550mJ OT223 522-BSP75GTA BSP75GTA 522BS BSP75GTA PDF

    ZXMP2120FFTA

    Contextual Info: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,


    Original     		ZXMP2120FF OT23F D-81541 ZXMP2120FFTA PDF

    BSP75G

    Abstract: BSP75GTA BSP75GTC
    Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		BSP75G 550mJ OT223 BSP75G BSP75GTA BSP75GTC PDF

    TS16949

    Abstract: ZXMN3F30FH ZXMN3F30FHTA
    Contextual Info: ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features


    Original     		ZXMN3F30FH ZXMN3F30FHTA D-81541 TS16949 ZXMN3F30FH ZXMN3F30FHTA PDF

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Contextual Info: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		ZXMS6002G 550mJ D-81541 TS16949 ZXMS6002G ZXMS6002GTA PDF

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Contextual Info: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		ZXMS6002G 550mJ D-81541 TS16949 ZXMS6002G ZXMS6002GTA PDF

    BSP75G

    Contextual Info: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over


    Original     		BSP75G 550mJ OT223 SCBSP75GDSC BSP75G PDF

    D8154

    Abstract: ZXMN2F30FH
    Contextual Info: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		ZXMN2F30FH ZXMN2F30FHTA ZXMN2F30FH 522-ZXMN2F30FHTA ZXMN2F30FHTA D8154 PDF

    TS16949

    Abstract: ZXMN3F30FH ZXMN3F30FHTA
    Contextual Info: ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features


    Original     		ZXMN3F30FH ZXMN3F30FHTA ZXMN3F30ex D-81541 TS16949 ZXMN3F30FH ZXMN3F30FHTA PDF

    design ideas

    Abstract: TS16949 ZXMN2F34FH ZXMN2F34FHTA
    Contextual Info: ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


    Original     		ZXMN2F34FH ZXMN2F34FHTA D-81541 design ideas TS16949 ZXMN2F34FH ZXMN2F34FHTA PDF

    ZXGD3002E6

    Abstract: ZXGD3002 ZETEX GATE DRIVER ZXGD3002E6TA MOSFET 4446 320 sot236 design ideas igbt display plasma marking E1 sot236 TS16949
    Contextual Info: ZXGD3002E6 9A peak Gate driver in SOT23-6 General description The ZXGD3002E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation


    Original     		ZXGD3002E6 OT23-6 ZXGD3002E6 D-81541 ZXGD3002 ZETEX GATE DRIVER ZXGD3002E6TA MOSFET 4446 320 sot236 design ideas igbt display plasma marking E1 sot236 TS16949 PDF

    TS16949

    Abstract: ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC 6A25D
    Contextual Info: ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.050 @ VGS = 10V 5 0.070 @ VGS = 4.5V 4.2 Description D1 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of


    Original     		ZXMN6A25DN8 D-81541 TS16949 ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC 6A25D PDF

    ZXGD3001E6

    Abstract: ZXGD3001 ZXGD3001E6TA design ideas igbt display plasma TS16949 ZETEX GATE DRIVER
    Contextual Info: ZXGD3001E6 9A peak Gate driver in SOT23-6 General description The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation


    Original     		ZXGD3001E6 OT23-6 ZXGD3001E6 D-81541 ZXGD3001 ZXGD3001E6TA design ideas igbt display plasma TS16949 ZETEX GATE DRIVER PDF

    ZXGD3003E6

    Abstract: ZXGD3003 ZXGD3003E6TA ZETEX GATE DRIVER design ideas igbt display plasma sot23 6 device Marking TS16949
    Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation


    Original     		ZXGD3003E6 OT23-6 ZXGD3003E6 D-81541 ZXGD3003 ZXGD3003E6TA ZETEX GATE DRIVER design ideas igbt display plasma sot23 6 device Marking TS16949 PDF

    2N7002 SOT23

    Abstract: marking 702 sot23 2N7002 MARKING design ideas 2N7002 TS16949 MARKING 702
    Contextual Info: 2N7002 60V SOT23 N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 7.5 @ VGS= 10V 0.5 7.5 @ VGS= 5V 0.05 V(BR)DSS 60 Description A small signal MOSFET for general purpose switching applications. Features D • Fast switching speed • Low gate drive capability


    Original     		2N7002 D-81541 2N7002 SOT23 marking 702 sot23 2N7002 MARKING design ideas 2N7002 TS16949 MARKING 702 PDF

    ZXMN10A25K

    Abstract: ZXMN10A25KTC
    Contextual Info: ZXMN10A25K 100V DPAK N-channel enhancement mode MOSFET Summary RDS on (V) ID (A) 0.125 @ VGS= 10V 6.4 0.150 @ VGS= 6V 5.8 V(BR)DSS 100 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast


    Original     		ZXMN10A25K ZXMN10A25KTC ZXMN10A25K ZXMN10A25KTC PDF

    TS16949

    Abstract: ZXMN6A25K ZXMN6A25KTC
    Contextual Info: ZXMN6A25K 60V DPAK N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (A) 0.050 @ VGS= 10V 10.7 0.070 @ VGS= 4.5V 9 60 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast


    Original     		ZXMN6A25K D-81541 TS16949 ZXMN6A25K ZXMN6A25KTC PDF

    ZXMN10A25

    Contextual Info: ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.125 @ VGS= 10V 4 0.150 @ VGS= 6V 3.7 V(BR)DSS 100 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast


    Original     		ZXMN10A25G OT223 ZXMN10A25GTA 10A25 522-ZXMN10A25GTA ZXMN10A25GTA ZXMN10A25 PDF

    p52 sot89

    Abstract: marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V
    Contextual Info: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		ZVP4525Z -250V; -205mA OT223 OT23-6 ZVN4525Z D-81673 p52 sot89 marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V PDF

    MARKING TR SOT23-6 P MOSFET

    Abstract: ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC
    Contextual Info: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		ZVP4525G -250V; -265mA OT23-6 OT223 ZVN4525G OT223 hoo26100 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC PDF