MOSFET 4232 Search Results

irf730

Contextual Info: IRF730 Semiconductor D ata S h eet Ju ly 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified

Contextual Info: AP4232GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement RDS ON D2 D1 D1 Dual N MOSFET Package 30V 22m ID 7.8A G2 S2 RoHS Compliant SO-8 S1 G1 Description

AP4232AGM

Abstract: 4232AGM
Contextual Info: AP4232AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 23mΩ ID 7.8A G2 S2 SO-8 S1 G1 Description

4232gm

Abstract: ap4232gm-hf 20V n-Channel Power MOSFET
Contextual Info: AP4232GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 22mΩ ID 7.8A G2 S2 ▼ RoHS Compliant SO-8

IRF730

Abstract: TA17414 TB334
Contextual Info: IRF730 Data Sheet July 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of

Contextual Info: AP4232AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement RDS ON D2 D1 D1 Dual N MOSFET Package 30V 23m ID 7.8A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the

4232gm

Contextual Info: AP4232GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement RDS ON D2 D1 D1 Dual N MOSFET Package 30V 22m ID 7.8A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the

4232gm

Abstract: AP4232GM DSA002950
Contextual Info: AP4232GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 22mΩ ID 7.8A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP4232GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 22mΩ ID SO-8 S1 G1 7.8A G2 S2 Description Advanced Power MOSFETs from APEC provide the

2SJ256

Abstract: EN4232
Contextual Info: Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ256]

EN4232

Abstract: 2SJ256
Contextual Info: Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ256]

mosfet 4232

Abstract: 12v dc to 115v aC CIRCUIT DIAGRAM
Contextual Info: LTC4232 5A Integrated Hot Swap Controller Features Description Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs n Overtemperature Protection

circuit diagram of delay timer on delay off

Contextual Info: LTC4232 5A Integrated Hot Swap Controller Features Description Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs n Overtemperature Protection

transistor c 4236

Abstract: S3P02 MMSF3P02Z
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M M SF3P02Z Medium Power Surface Mount Products TMOS Single P-Channel w ith M onolithic Zener ESD Protected G ate M otorola Preferred Device SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.060 OHM

Contextual Info: LTC4232-1 5A Integrated Hot Swap Controller FEATURES DESCRIPTION Reduced 16ms Turn-On Delay n Small Footprint n 33mΩ MOSFET with R SENSE n Wide Operating Voltage Range: 2.9V to 15V n Adjustable, 10% Accurate Current Limit n Current and Temperature Monitor Outputs

Contextual Info: LTC4232 5A Integrated Hot Swap Controller FEATURES n n n n n n n n n n n DESCRIPTION Small Footprint 33mΩ MOSFET with RSENSE Wide Operating Voltage Range: 2.9V to 15V Adjustable, 10% Accurate Current Limit Current and Temperature Monitor Outputs Overtemperature Protection

PE4232

Abstract: PE4232-EK
Contextual Info: PRODUCT SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • Integrated 0.25 watt terminations • CTB performance of 100dBc • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at

tc4422 ic

Abstract: tc4422ca
Contextual Info: ~ Semiconductor, Inc. TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially Immune to any form of upset except direct overvoltage or over-dissipation — they can­

PE4232

Abstract: PE4232-EK mosfet 4232
Contextual Info: PRELIMINARY SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at 5 MHz, 0.75 dB at 1 GHz • High 1 dB compression: +30 dBm

BNC T connectors INSERTION LOSS

Abstract: PE4232 PE4232-EK mosfet 4232
Contextual Info: PRODUCT SPECIFICATION PE4232 SPST CATV MOSFET Switch Product Description Features • Non-reflective 75-ohm switch • Integrated 75-ohm 0.25 watt terminations • High isolation: 90 dB at 5 MHz, 53 dB at 1 GHz • Low insertion loss: 0.5 dB at 5 MHz, 0.75 dB at 1 GHz

Contextual Info: ” Semiconductor, Inc. TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation — they can­

cn/A/U 237 BG

Abstract: LTC1436 LTC1436CGN LTC1436CGN-PLL LTC1436IGN LTC1436IGN-PLL LTC1436-PLL LTC1437 LTC143XC LTC143XI
Contextual Info: u r m TECHNOLOGY LTC1436/LTC1436-PLL/LTC1437 High Efficiency Low Noise Synchronous Step-Down Switching Regulators F€fflUR€S D C S C M C T IO n • Maintains Constant Frequency at Low Output Currents ■ Dual l\l-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency PLL Lockable

rs 24v

Abstract: transistor Cd 18 p
Contextual Info: U f l f i A B . TECHNO LO G Y LTC1436/LTC1436-PLL/LTC1437 High Efficiency Low Noise Synchronous Step-Down Sw itching Regulators F€OTUR€S D C S C R IP T IO n • Maintains Constant Frequency at Low Output Currents ■ Dual l\l-Channel MOSFET Synchronous Drive

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.