MOSFET 400V 16A Search Results

Contextual Info: IRFP350 S e m iconductor July 1999 Data Sheet 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET • 16A ,400V Ordering Information IRFP350 TO-247 • r DS ON = 0.300i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRF360

Abstract: IRF3601 mosfet irf360
Contextual Info: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: IRFP350 Data Sheet Title FP3 bt A, 0V, 00 m, 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFD310 Semiconductor D ata S h eet Ju ly 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 0.4A, 400V • r DS ON = 3 .6 0 0 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω

IRF350LC

Abstract: IRFP350LC IRFPE30
Contextual Info: PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.30 Ω

IRFP350

Contextual Info: PD-9.445C International Ik?r1Rectifier IRFP350 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n -

IRFB17N50L

Contextual Info: PD - 94084A IRFB17N50L SMPS MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS HEXFET Power MOSFET RDS(on) typ. ID 0.28Ω 16A 500V Benefits

Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

Contextual Info: PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.28Ω 500V 170ns 16A • Motor Control applications

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

2SK3013

Abstract: FP16W60VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK3013 FP16W60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 600V 16A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

APT15F60B

Abstract: APT15F60S MIC4452
Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

Contextual Info: AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

7905 voltage regulator

Abstract: 7905 datasheet irf 540 mosfet IRF 810 7905 7905 regulator 7905 regulator datasheet AN-994 IRFPS37N50A pcb mounted transformer 400v
Contextual Info: PD- 95142 IRFPS37N50APbF SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

AP16N50I

Abstract: marking codes transistors SSs 16N50I TO220C
Contextual Info: AP16N50I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 500V RDS ON 0.4Ω ID G 16A S Description Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC8-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE „ DESCRIPTION The UTC BYC8-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC8-600 is generally applied in continuous current

IRF igbt gate driver

Abstract: MOSFET IRF 630 SMD-247 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603
Contextual Info: PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS RDS(on) typ. Trr ID 500V 0.28Ω 170ns

BYC8-600

Abstract: BYC8600
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC8-600 DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE „ DESCRIPTION The UTC BYC8-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC8-600 is generally applied in continuous current

STU16NC50

Contextual Info: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STU16NC50

Contextual Info: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFPS37N50A

Abstract: ST 7905 and application notes 7905 regulator AN-994 MJ30001 Pulse-10 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD- 91822C SMPS MOSFET IRFPS37N50A HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

IRFP17N50L

Contextual Info: PD - 94322 IRFP17N50L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS Zero Voltage Switching (ZVS) and High Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters l l l l VDSS 500V RDS(on) typ.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET  DESCRIPTION 1 The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state