MOSFET 400A Search Results

Infineon technology roadmap for mosfet

Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Contextual Info: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial

AN1001

Abstract: AN-994 TO-262 Package
Contextual Info: PD - 97002 PROVISIONAL IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free l Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits

IRFB52N15D

Abstract: AN1001 IRF1010 IRF530S IRFS52N15D IRFSL52N15D
Contextual Info: PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

100A 1000V mosfet

Abstract: mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A
Contextual Info: MOSFET MODULE SF100CB100 UL;E76102 M SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.

AN1001

Abstract: IRF1010 IRF530S IRFB52N15D IRFS52N15D IRFSL52N15D ir 119 e
Contextual Info: PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

AN1001

Abstract: AN-994 IRFB52N15
Contextual Info: PD - 97002 PROVISIONAL IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Plasma Display Panel l Lead-Free l Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits

IRLR2908

Abstract: IRLU2908 IRLR2908PbF
Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

AN-994

Abstract: EIA-541 IRFR120 IRFU120 IRLR2908 IRLU2908 marking 23A Mosfet IRLR2908PbF
Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRLR2908PbF

Contextual Info: PD - 95552 IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRLR2908

Abstract: IRLU2908
Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V

Contextual Info: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

IRLR2908

Abstract: IRLU2908 MOSFET IRF 380
Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V

IRHM7250SE

Contextual Info: PD - 91779A IRHM7250SE 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A International Rectifier’s RADHardTM HEXFET® MOSFET

IRHM7450SE

Abstract: 400V to 12V DC Regulator
Contextual Info: PD - 91223D IRHM7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET

Ultrasonic humidifier circuit

Abstract: 2SK962 equivalent ups manufacturing transformer diagram 200w dc to ac inverter Circuit diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91
Contextual Info: POWER MOSFET APPLICATION NOTES Typical power MOSFET applications 50, I, • A u tom otive: Pow er steering, au to m o tive DC/DC converters 12V DC , electric motor driven tools, and switch replacement • Battery operated fork lifts: Power steering, running, and

IRH7450SE

Contextual Info: PD - 91390B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7450SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7450SE Radiation Level 100K Rads (Si) RDS(on) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET

IRH7250SE

Contextual Info: PD - 91778A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7250SE 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A International Rectifier’s RADHardTM HEXFET® MOSFET

IRHN7250SE

Contextual Info: PD - 91780B IRHN7250SE 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A SMD-1 International Rectifier’s RADHardTM HEXFET® MOSFET

DIODE MARKING B4

Abstract: P1 marking code dpak STD30NF03LTT4 D30NF03LT JESD97 STD30NF03LT
Contextual Info: STD30NF03LT N-channel 30V - 0.017Ω - 30A - DPAK STripFET II Power MOSFET General features • Type VDSS RDS on ID STD30NF03LT 30V < 0.025Ω 30A Low threshold drive 3 1 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature

SF100CB100

Contextual Info: MOSFET MODULE SF100CB100 UL;E76102 （M） SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode（trr≦300ns）reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for

SF100CB100

Abstract: fast recovery diode trr Pt mosfet 4805
Contextual Info: MOSFET MODULE SF100CB100 UL;E76102 （M） SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode（trr≦300ns）reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for

IRFH4201

Abstract: International Rectifier 326
Contextual Info: IRFH4201PbF HEXFET Power MOSFET VDSS 25 RDS on max (@ VGS = 10V) (@ VGS = 4.5V) V 0.95 m 1.25 Qg (typical) 46.0 nC ID (@TC (Bottom) = 25°C) 326 A PQFN 5X6 mm Applications  Synchronous Rectifier MOSFET for Sync Buck Converters

transistor ac51

Abstract: WF020000 SCM0100200 WF141100 WF-141 UE100 EN61000-4-2 55GB WF191100 WF070000
Contextual Info: celduc r e l a i S/CON/SCM0100200/D/28/11/03 s Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM0100200 ! Latest MOSFET technology generation. ! Ultra low on-state resistance. ! New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

Contextual Info: StrongIRFET IRFH8201PbF HEXFET Power MOSFET VDSS 25 RDS on max (@ VGS = 10V) (@ VGS = 4.5V) V 0.95 m 1.60 Qg (typical) 56 nC ID (@TC (Bottom) = 25°C) 100 A PQFN 5X6 mm Applications  OR-ing MOSFET for 12V (typical) Bus in-Rush Current