MOSFET 337 Search Results

mosfet 337

Contextual Info: SENSITRON SEMICONDUCTOR SHD239602 TECHNICAL DATA DATA SHEET 337, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.020 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT40P04 Power MOSFET 40V, 50A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

AN569

Abstract: MTB36N06V MTB36N06VT4
Contextual Info: MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

5962F9951102VXC

Abstract: HS-4423BRH HS-4423RH 5962F9951101VXC 5962F9951101QXC HS9-4423RH-Q HS-1825ARH HS9-4423BRH-Q 5962F9951102QXC
Contextual Info: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current

FDD4141-F085

Abstract: FDD4141 25c337 fdd4141_f085 Fairchild FDD4141
Contextual Info: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

Contextual Info: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current

5962F9956002VXC

Abstract: 5962F9956001VXC HS-4424RH 4424 FS055 HS-4424BRH HS9-4424BRH-8 5962-F9956002QXC HS9-4424RH-8 SMD SINGLE GATE
Contextual Info: HS-4424RH, HS-4424BRH Data Sheet June 1999 Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers The Radiation Hardened HS-4424RH and HS-4424BRH are non-inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current

337 SMD

Abstract: KRF7703 mosfet 337
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7703 TSSOP-8 Unit: mm Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.2mm 1,5,8: Drain Available in Tape & Reel 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter

AN1001

Abstract: AN-994 IRFB59N10D IRFS59N10D IRFSL59N10D 354A
Contextual Info: PD - 93890 IRFB59N10D IRFS59N10D IRFSL59N10D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 0.025Ω 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

AN569

Abstract: MTP30N06V MTP36N06V
Contextual Info: MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Rad hard MOSFETS in Harris

Contextual Info: HS-4424RH, HS-4424BRH Data Sheet June 1999 Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers The Radiation Hardened HS-4424RH and HS-4424BRH are non-inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current

Contextual Info: FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of

Contextual Info: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

p06e

Abstract: Mosfet Sot223
Contextual Info: [ /Title RFT1 P06E /Subject (1.4A, 60V, 0.285 Ohm, ESD Rated, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, PChannel Power MOSFET, SOT223) /Creator () /DOCI NFO pdfmark T UCT ROD ACEMEN SIL P E T L OLE REP 8-INTER OBS ENDED 88 m 1 MM cations tersil.co

TB 2926

Abstract: N CHANNEL MOSFET 10A 1000V logic level n channel MOSFET IRF7413Z LTC2926 LTC2926CGN LTC2926CUFD LTC2926IGN LTC2926IUFD
Contextual Info: LTC2926 MOSFET-Controlled Power Supply Tracker U FEATURES DESCRIPTIO • The LTC2926 provides a simple solution for tracking and sequencing up to three power supply rails. An N-channel MOSFET and a few resistors per channel configure the load voltages to ramp up and down together, with voltage

IRFZ44 pwm pv charge controller circuit diagram

Abstract: motor driver IRFZ44 gate drive for mosfet irfz44 IRFZ44 "pin compatible" IRFZ44 COMPLEMENT OF IRFZ44 IRFZ44 mosfet motor driver full bridge 10A mosfet class d Amplifier 200w circuit diagrams application irfz44
Contextual Info: LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off

PD-96026

Abstract: IRF7703
Contextual Info: PD-96026 IRF7703PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max (mW) ID -40V 28@VGS = -10V 45@VGS = -4.5V -6.0A -4.8A 9 Description

FDS8813NZ

Contextual Info: FDS8813NZ N-Channel tm PowerTrench MOSFET 30V, 18.5A, 4.5mΩ Features General Description „ Max rDS on = 4.5mΩ at VGS = 10V, ID = 18.5A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

IRF7703

Abstract: IRF770
Contextual Info: PD- 96148 IRF7703GPbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS(on) max (mW) ID -40V 28@VGS = -10V 45@VGS = -4.5V -6.0A

Contextual Info: Freescale Semiconductor Advance Information Document order number: MC33816 Rev. 2.0, 11/2012 Automotive Engine Control IC with Smart Gate Control The 33816 is a 12 channel gate driver IC for automotive engine control applications. The IC consist of five external MOSFET high side predrivers and seven external MOSFET low side pre-drivers. The 33816

VKM40-06P1

Abstract: eco-pac CoolMOS Power Transistor power mosfet 200A mosfet Vds 50 Vgsth a22055 welding mosfet
Contextual Info: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13

IRF7702

Abstract: IRF7703
Contextual Info: PD - 94221 IRF7703 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS Ω) RDS(on) max (mΩ) ID -40V 28@VGS = -10V 45@VGS = -4.5V -6.0A -4.8A Description HEXFET® Power MOSFETs from International Rectifier

mosfet transistor 0.35 um

Contextual Info: VHM 40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 Preliminary data L4 L6 K 12 L9 P 18 R 18 NTC F 10 X 15 K 10 K 13 T 18 V 18

CoolMOS Power Transistor

Abstract: power mosfet 200A VHM40-06P1
Contextual Info: VHM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 K 12 Preliminary data sheet L9 P 18 R 18 NTC F10 K 13 K10 Pin arangement see outlines