MOSFET 337 Search Results

3nf CAPACITOR

Abstract: 839B IXS839S1
Contextual Info: IXYS IXS839 / IXS839A / IXS839B Synchronous Buck MOSFET Driver Features: General Description • Logic Level Gate Drive Compatible The IXS839/IXS839A/IXS839B are 2A Source / 4A Sink Synchronous Buck MOSFET Drivers. These Synchronous Buck MOSFET Drivers are specifically

SHD239602

Abstract: mosfet 337
Contextual Info: SENSITRON SEMICONDUCTOR SHD239602 TECHNICAL DATA DATA SHEET 337, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.020 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

mosfet 337

Contextual Info: SENSITRON SEMICONDUCTOR SHD239602 TECHNICAL DATA DATA SHEET 337, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.020 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT40P04 Power MOSFET 40V, 50A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25

transistor P18

Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET

NTC K15

Abstract: 125OC PSMG150
Contextual Info: ECO-PACTM 2 Power MOSFET in ECO-PAC 2 PSMG 150/01* Single MOSFET Die X18 I K10/11 A1 L N 8/9 Preliminary Data Sheet K13 MOSFET VDSS ID25 RDS on trr *NTC optional K15 Symbol Test Conditions V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

uc3854 3kw pfc

Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
Contextual Info: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager

AN569

Abstract: MTB36N06V MTB36N06VT4
Contextual Info: MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

HS-4424

Abstract: HS4424B 5962F9951102VXC 5962F9951101VXC HS-4423 IS1715 HS-4423RH hs4423brh HS- RH HS4423
Contextual Info: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current

FDD4141

Contextual Info: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

5962F9951102VXC

Abstract: HS-4423BRH HS-4423RH 5962F9951101VXC 5962F9951101QXC HS9-4423RH-Q HS-1825ARH HS9-4423BRH-Q 5962F9951102QXC
Contextual Info: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current

FDD4141-F085

Abstract: FDD4141 25c337 fdd4141_f085 Fairchild FDD4141
Contextual Info: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

Contextual Info: HS-4423RH, HS-4423BRH Data Sheet June 1999 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current

Contextual Info: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

VS-40MT060WFHT

Abstract: 01100-T
Contextual Info: VS-40MT060WFHT www.vishay.com Vishay Semiconductors Full Bridge IGBT and MOSFET MTP Power Module FEATURES • Generation 4 warp speed IGBT and power MOSFET technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses

Contextual Info: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to

AAT4615

Abstract: AAT4615ITP-T1
Contextual Info: AAT4615 2.25A Current Limited Load Switch General Description Features The AAT4615 SmartSwitch is a member of AnalogicTech™'s Application Specific Power MOSFET™ ASPM™ product family. It is a Current Limited P-channel MOSFET power switch designed

RMW150N03

Contextual Info: Data Sheet 4.5V Drive Nch MOSFET RMW150N03  Structure Silicon N-channel MOSFET  Dimensions Unit : mm (8) (6) (5) 5.0 6.0 Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 3) Low voltage drive(4.5V drive). (7) 0.5

AN1001

Abstract: AN-994 IRFB59N10D IRFS59N10D IRFSL59N10D
Contextual Info: PD - 93890 IRFB59N10D IRFS59N10D IRFSL59N10D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 0.025Ω 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

5962F9956002VXC

Abstract: 5962F9956001VXC HS-4424RH 4424 FS055 HS-4424BRH HS9-4424BRH-8 5962-F9956002QXC HS9-4424RH-8 SMD SINGLE GATE
Contextual Info: HS-4424RH, HS-4424BRH Data Sheet June 1999 Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers The Radiation Hardened HS-4424RH and HS-4424BRH are non-inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current

337 SMD

Abstract: KRF7703 mosfet 337
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7703 TSSOP-8 Unit: mm Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.2mm 1,5,8: Drain Available in Tape & Reel 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter

AN1001

Abstract: AN-994 IRFB59N10D IRFS59N10D IRFSL59N10D 354A
Contextual Info: PD - 93890 IRFB59N10D IRFS59N10D IRFSL59N10D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 100V 0.025Ω 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including