MOSFET 30V 75A TO 252 Search Results

90T03GH

Contextual Info: AP90T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On- resistance D BVDSS 30V RDS ON Simple Drive Requirement 4m ID Fast Switching Characteristic G 75A S Description The TO-252 package is widely preferred for commercial-industrial

Contextual Info: AP6679GH/J RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -75A S Description G The TO-252 package is widely preferred for commercial-industrial

85t03gh

Abstract: 85t03g
Contextual Info: AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D BVDSS RDS ON Simple Drive Requirement ID Fast Switching G 30V 6m 75A S Description G D S The TO-252 package is widely preferred for all commercial-industrial

Contextual Info: AP90T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On- resistance D ▼ Simple Drive Requirement BVDSS 30V RDS ON 4mΩ ID ▼ Fast Switching Characteristic G 75A S Description The TO-252 package is widely preferred for commercial-industrial

Contextual Info: AP6679GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic G BVDSS -30V RDS ON 9m ID -75A RoHS Compliant S Description G The TO-252 package is widely preferred for commercial-industrial

6679GH

Abstract: 6679GJ 6679G AP6679gh marking codes transistors SSs PART MARKING 24V
Contextual Info: AP6679GH/J RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description G The TO-252 package is widely preferred for commercial-industrial

GFD55N03

Contextual Info: GFD55N03 Vishay Semiconductors New Product N-Channel Enhancement-Mode MOSFET H C N E ET R T ENF G TO-252 DPAK D VDS 30V RDS(ON) 7mΩ ID 75A 0.265 (6.73) 0.255 (6.48) G 0.094 (2.39) 0.087 (2.21) S 0.214 (5.44) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) 0.190

APM3004N

Abstract: APM3004NU STD-020C VGEN-10V APM3004
Contextual Info: APM3004NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/75A, RDS ON =3.3mΩ (typ.) @ VGS=10V G RDS(ON)=4.5mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

SSD70N03-04D

Abstract: MosFET
Contextual Info: SSD70N03-04D 75A, 30V, RDS ON 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power

Contextual Info: PD -96097A IRF2903ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS on = 2.4mΩ G ID = 75A S

Contextual Info: PD -96097A IRF2903ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS on = 2.4mΩ G ID = 75A S

90T03GH

Abstract: AP90T03GH 90t03 90t03g marking codes transistors SSs AP90T03GJ
Contextual Info: AP90T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On- resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 4mΩ ID G 75A S Description G The TO-252 package is widely preferred for commercial-industrial

6679gh

Abstract: 6679GJ AP6679GH 6679G marking codes transistors SSs
Contextual Info: AP6679GH/J RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description G The TO-252 package is widely preferred for commercial-industrial

SSM85T03H

Contextual Info: SSM85T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 30V R DS ON 6mΩ 75A ID G S Description The SSM85T03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

Abstract: TO-251 footprint SSM90T03GH SSM90T03 ssm90t03gj
Contextual Info: SSM90T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free; RoHS compliant. BVDSS 30V R DS ON 4mΩ ID 75A S DESCRIPTION G D S The SSM90T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

ssm85T03

Abstract: MOSFET having TO-252 PAckage ssm85t03gh ssm85t03j
Contextual Info: SSM85T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free; RoHS compliant. BV DSS 30V R DS ON 6mΩ ID 75A S DESCRIPTION The SSM85T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

SSM90T03H

Abstract: ssm90t03j
Contextual Info: SSM90T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 30V R DS ON 4mΩ 75A ID G S Description G D S The SSM90T03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

IRF P CHANNEL MOSFET

Abstract: irf1010 applications mosfet 30V 18A TO 252 AN-1005
Contextual Info: PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS on = 2.4mΩ

AN-1005

Contextual Info: PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS on = 2.4mΩ

AN-1005

Contextual Info: PD - 96098 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZSPbF IRF2903ZLPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V

Contextual Info: PD - 96988 IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ

IRF2903Z

Abstract: IRF2903ZL IRF2903ZS 24v 12v 10A regulator
Contextual Info: PD - 96988A IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ

Contextual Info: PD - 96988A IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ

IRF2903Z

Abstract: IRF2903ZL IRF2903ZS
Contextual Info: PD - 96988A IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS on = 2.4mΩ