MOSFET 30V 12A TO 252 Search Results

IRHF53Z30

Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
Contextual Info: PD - 93793A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)

IRHF53Z30

Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
Contextual Info: PD - 93793B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)

APM3055L

Abstract: 3055L APM3055L voltage APM3055L equivalent APM3055L datasheet J-STD-020A marking 3055l f 3055l A6 sot223
Contextual Info: APM3055L N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =100mΩ(max) @ VGS=10V RDS(ON)=200mΩ(max) @ VGS=4.5V • • • Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages

mosfet y1

Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
Contextual Info: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A

Contextual Info: APM3054NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

3055L

Abstract: f 3055l
Contextual Info: APM3055LU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/12A, RDS ON =75mΩ(typ.) @ VGS=10V RDS(ON)=100mΩ(typ.) @ VGS=4.5V • • • G D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

AP15T03J

Abstract: C1864
Contextual Info: AP15T03H/J Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement BVDSS 30V RDS ON 80mΩ ID ▼ Fast Switching Characteristic G 12A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

Contextual Info: AP15T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET  Lower Gate Charge D  Simple Drive Requirement BVDSS 30V RDS ON 80m ID  Fast Switching Characteristic G 12A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

RD-188

Abstract: AP15T03GJ
Contextual Info: AP15T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement BVDSS 30V RDS ON 80mΩ ID ▼ Fast Switching Characteristic G 12A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

ELM32405LA-S

Abstract: SS510
Contextual Info: Single P-channel MOSFET ELM 32405LA-S • General description B F e a tu re s ELM32405LA-S uses advanced trench technology to provide excellentRds on , low gate charge and low gate resistance. • Vds=-30V • Id=-12A • Rds(on) < 45mQ (Vgs=-10V) • Rds(on) < 75mQ (Vgs=-4.5V)

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

Si4830

Abstract: Fast Switching mosfet SI3433B smd diode 615
Contextual Info: Notebook Table of Contents POWER MANAGEMENT, Charger Power. 3 POWER MANAGEMENT, CPU Power. 6

Contextual Info: AP25T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET  Lower Gate Charge D  Simple Drive Requirement BVDSS 30V RDS ON 35m ID  Fast Switching Characteristic G 20A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

ap25t03gj

Contextual Info: AP25T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 35mΩ ID G 20A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

PIMB103E-1R0MS

Contextual Info: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION • Input Voltage Range: 3V to 27V  Output Voltage Range: 0.5V to 12V  Continuous 12A Load Capability  Constant On-Time Control  Compensation Loop not Required  Excellent Efficiency at Very Low Output Currents

k 1058 mosfet

Contextual Info: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make

irf Lot Codes

Contextual Info: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make

lot date code panasonic 0603 resistor

Abstract: Sanyo "date code" POSCAP Capacitor Sanyo "date code"
Contextual Info: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make

k 1058 mosfet

Abstract: lot date code panasonic 0603 resistor IR3476 3476M Sanyo lot code Capacitor TP20 capacitor 330uF 25V GRM188F51H224ZA01D taiyo yuden date code PD97603
Contextual Info: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make

Sanyo lot code Capacitor

Abstract: lot date code panasonic 0603 resistor V18 marking
Contextual Info: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION The IR3476 SupIRBuckTM is an easy-to‐use, fully integrated and highly efficient DC/DC voltage regulator. The onboard constant on time hysteretic controller and MOSFETs make

Contextual Info: AP9469GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D RDS ON Simple Drive Requirement ID Fast Switching Characteristic G RoHS Compliant 40V 50m 18A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

panasonic capacitor date code

Abstract: 805 smd code capacitor 400KHZ ir347 lot date code panasonic 0603 resistor RK73H*1002f GRM188R71E105K PIMB103E-1R0MS
Contextual Info: 12A Highly Integrated SupIRBuckTM FEATURES IR3476 DESCRIPTION • Input Voltage Range: 3V to 27V  Output Voltage Range: 0.5V to 12V  Continuous 12A Load Capability  Constant On-Time Control  Compensation Loop not Required  Excellent Efficiency at Very Low Output Currents

25e-4

Abstract: HUF76407D3ST TB334 AN7254 AN7260 AN9321 AN9322 HUF76407D3 HUF76407D3S
Contextual Info: HUF76407D3, HUF76407D3S Data Sheet October 1999 File Number 4664.1 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76407D3S HUF76407D3

10lbxin

Abstract: classd audio amplifier
Contextual Info: PD - 96909 IRFB4103PbF DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI