MOSFET 300V 10A Search Results

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-6 HIGH-SPEED SWITCHING USE FS10UM-6 ' V dss . .300V ' rDS ON (MAX) . . 0.68Í2 ' Id . . 10A

10N30

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

10N30

Abstract: 738A power mosfet 200A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE FS5VS-6 ♦ # • Voss . 300V • rDS ON (MAX) .1 ,6Q • Id . 5A

n channel mosfet 1400 v

Abstract: FS20SM6
Contextual Info: MITSUBISHI Neh POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE FS20SM-6 OUTLINE DRAWING D im ension s in mm 4.5 • V dss .300V .0.26Q • I d . 20 A

FS20KM-6

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KM-6 HIGH-SPEED SWITCHING USE FS20KM-6 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 V d s s . 300V rDS ON (MAX) . 0.26Í2

Contextual Info: MITSUBISHI Neh POWER MOSFET FK20KM-6 HIGH-SPEED SWITCHING USE FK20KM-6 OUTLINE DRAWING Dim ensions in mm 10 ± 0.3 2.8 ± 0.2 V d s s . 300V rDS ON (MAX) . 0.33Í2

Contextual Info: MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 • V dss . 300V • ros O N (M AX ) . 0.33Q • ID . 20A • Integrated Fast Recovery Diode (M A X .)

SAM25

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OVS-6 HIGH-SPEED SWITCHING USE FS1 OVS-6 OUTLINE DRAWING Dimensions in mm , 4.5 . .1-3 C\ a ,CQ -0 ^ - 4 ; 0.5 •ï • V dss . 300V • rDS ON (MAX) . 0.68Q

TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω

IRF737LCL

Abstract: f1010h
Contextual Info: PD - 9.1314 International M Rectifier IRF737LC PRELIMINARY HEXFET Power MOSFET • • • • • Reduced Gate Drive Requirement Enhanced 30V Vqs Rating Reduced Qss, Coss, Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V ^ D S o n =

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE FS20SM-6 O UTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 kf ff 4.4 1.0 5.45 5.45 0.6 Q w r V d s s .300V q O q w

Contextual Info: International S Rectifier PD 91314 IRF737LC preliminary HEXFET^ Power MOSFET • Reduced Gate Drive Requirement • Enhanced 30V V qs Rating • Reduced Ciss. Coss> C rss • Extrem ely High Frequency Operation • Repetitive Avalanche Rated Voss = 300V RDS on =

FK20UM-6

Contextual Info: MITSUBISHI Nch POWER MOSFET FK20UM-6 HIGH-SPEED SWITCHING USE FK20UM-6 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr ¡VDSS . 300V

Contextual Info: MITSUBISHI Neh POWER MOSFET FK20UM-6 HIGH-SPEED SWITCHING USE FK20UM-6 OUTLINE DRAWING I V iu g 'u j I Dimensions I in mm Ti < 5 i -3-Ê V' r G A TE • VDSS . 300V • rDS ON (MAX) . 0.33Q

FK20SM-6

Contextual Info: MITSUBISHI Nch POWER MOSFET FK20SM-6 HIGH-SPEED SWITCHING USE FK20SM-6 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 300V

FK20VS-6

Contextual Info: MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 OUTLINE DRAWING r Dimensions in mm 4.5 1.3 +0.3 –0 1.5 3.0 –0.5 +0.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr ¡VDSS . 300V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OVS-6 HIGH-SPEED SWITCHING USE FS1 OVS-6 OUTLINE DRAWING Dimensions in mm ♦ •st q w e ■V 6 -H CD Q w r oj q w e r GATE DRAIN SOURCE DRAIN V d s s .300V

TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Contextual Info: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve

TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Contextual Info: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve

Contextual Info: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20VS-6 HIGH-SPEED SWITCHING USE FS20VS-6 OUTLINE DRAWING I q Dimensions in mm J w e o +i CO Q w r q w e r q o- V d s s .300V rDS ON (MAX) .0.26Í2

88N30W

Contextual Info: Advanced Power Electronics Corp. AP88N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristics G BV DSS 300V R DS ON 48mΩ ID 48A S Description Advanced Power MOSFETs from APEC provide the designer with the best

IXTI76N25T

Abstract: IXTP76N25T IXTQ76N25T 2ZAO0732373 76N25T DIODE 76A t244
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 IXTH S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C