MOSFET 20V 80A Search Results

STV160NF02LA

Contextual Info: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

STV160NF02L

Contextual Info: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

STV160NF02L

Contextual Info: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

STV160NF02LA

Contextual Info: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

Contextual Info: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N05 Power MOSFET 80A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, superior switching performance

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial

80N08

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 80N08 Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial

FDB8442

Contextual Info: FDB8442 N-Channel PowerTrench MOSFET 40V, 80A, 2.9mΩ Applications „ Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 181nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

alternator diode 35a 12v

Abstract: AN7514 FDP8441
Contextual Info: FDP8441 tm N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Applications „ Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

FDB8441

Contextual Info: FDB8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.5mΩ Applications „ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

FDI8441

Contextual Info: FDI8441_F085 N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Features Applications „ Typ rDS on = 2.2mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

FDB8441

Contextual Info: FDB8441_F085 N-Channel PowerTrench MOSFET 40V, 80A, 2.5mΩ Applications „ Automotive Engine Control „ Typ Qg 10 = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers „ Low Qrr Body Diode „ Electronic Steering

Contextual Info: FDP8441_F085 N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Features Applications ̈ Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A ̈ Automotive Engine Control ̈ Typ Qg(10) = 215nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N06 Power MOSFET 60V, 80A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and high switching speed. It can

AN9757

Contextual Info: 2012 FDB9403_F085 N-Channel Power Trench MOSFET 40V, 110A, 1.2mΩ D D Features „ Typ rDS on = 1mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB FDB SERIES

Contextual Info: UniFETTM FDP80N06 tm N-Channel MOSFET 60V, 80A, 10mΩ Features Description • RDS on = 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A • Low gate charge(Typ. 57nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

SHDCG225701

Contextual Info: SENSITRON SEMICONDUCTOR SHD225701 SHDCG225701 TECHNICAL DATA DATA SHEET 4146, REV. - LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 100 Volt, 0.009 Ohm, 80A MOSFET for Glidcop version • Isolated Hermetic Metal Package • Ultra Low RDS on • Characterised at VGS of 4.5V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics including fast switching speed and low thermal resistance. It is usually used

Contextual Info: FDI8442_F085 N-Channel PowerTrench MOSFET 40V, 80A, 3.1m: Features Applications „ Typ rDS on = 2.3m: at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10)= 181nC at VGS= 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

4800 mosfet

Contextual Info: SENSITRON SEMICONDUCTOR SHD224514 TECHNICAL DATA DATA SHEET 1172, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 80A, 15 mili Ohm œ Isolated Hermetic Metal Package œ Fast intrinsic Rectifier œ Very Low RDS on œ Low package inductance-easy to drive and protect

BSC 26 2121

Abstract: MOSFET 40A 100V
Contextual Info: SENSITRON SEMICONDUCTOR SHD224622 TECHNICAL DATA DATA SHEET 4197, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 80A, 36 milliohm œ Isolated Hermetic Metal Package œ Fast intrinsic Rectifier œ Low package inductance-easy to drive and protect

SHDCG225701

Contextual Info: SENSITRON SEMICONDUCTOR SHD225701 SHDCG225701 TECHNICAL DATA DATA SHEET 4146, REV. A LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 100 Volt, 0.009 Ohm, 80A MOSFET for Glidcop version • Isolated Hermetic Metal Package • Ultra Low RDS on • Characterised at VGS of 4.5V

SHDCG224701

Contextual Info: SENSITRON SEMICONDUCTOR SHD224701 SHDCG224701 TECHNICAL DATA DATA SHEET 4151, REV. A LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 100 Volt, 0.009 Ohm, 80A MOSFET for Glidcop version • Isolated Hermetic Metal Package • Ultra Low RDS on • Characterised at VGS of 4.5V