MOSFET 20V 45A Search Results

AOD424

Abstract: PF7000
Contextual Info: AOD424 20V N-Channel MOSFET General Description Product Summary The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AOL1404

Contextual Info: AOL1404 20V N-Channel MOSFET General Description Product Summary The AOL1404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

Contextual Info: AOL1404 20V N-Channel MOSFET General Description Product Summary The AOL1404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

Contextual Info: AOD424 20V N-Channel MOSFET General Description Product Summary The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

Contextual Info: AP9918GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID Low on-resistance Capable of 2.5V gate drive Low drive current 20V 14m 45A Surface mount package Description Advanced Power MOSFETs from APEC provide the

9918GH

Abstract: AP9918GH marking codes transistors SSs
Contextual Info: AP9918GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID D 20V 14mΩ 45A G ▼ Surface mount package S Description

Contextual Info: Single N-channel MOSFET ELM32420LA-S •General description ■Features ELM32420LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=45A Rds(on) < 14mΩ (Vgs=5V) Rds(on) < 26mΩ (Vgs=2.5V)

AP9918GH

Contextual Info: AP9918GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 20V ▼ Capable of 2.5V gate drive RDS ON 14mΩ ▼ Low drive current ID D 45A G ▼ Surface mount package S Description

Contextual Info: Single N-channel MOSFET ELM32420LA-S •General description ■Features ELM32420LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=45A Rds(on) < 14mΩ (Vgs=5V) Rds(on) < 26mΩ (Vgs=2.5V)

ELM32420LA

Contextual Info: 单 N 沟道 MOSFET ELM32420LA-S •概要 ■特点 ELM32420LA-S 是 N 沟道低输入电容，低工作电压， •Vds=20V 低导通电阻的大电流 MOSFET。 ·Id=45A ·Rds on < 14mΩ (Vgs=5V) ·Rds(on) < 26mΩ (Vgs=2.5V) ■绝对最大额定值 项目

STV160NF02LA

Contextual Info: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED

9918h

Abstract: SSM9918H
Contextual Info: SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance D Capable of 2.5V gate drive BV DSS 20V R DS ON 14mΩ ID Low drive current 45A G Surface mount package S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

AP9918H

Contextual Info: AP9918H/J Advanced Power Electronics Corp. ▼ Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Capable of 2.5V gate drive ▼ Low drive current BVDSS 20V RDS ON 14mΩ ID 45A G ▼ Surface mount package S Description The Advanced Power MOSFETs from APEC provide the

STV160NF02LA

Contextual Info: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

Contextual Info: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

Contextual Info: STV160NF02LA N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

STV160NF02L

Contextual Info: STV160NF02L  N - CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED

STV160NF02L

Abstract: motherboard schematic diagram
Contextual Info: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

Contextual Info: STB130NH02L N-CHANNEL 20V - 0.0034 Ω - 90A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION TYPE STB130NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0044 Ω 90 A(#) TYPICAL RDS(on) = 0.0034 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

STV160NF02L

Contextual Info: STV160NF02L  N - CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED

STV160NF02L

Contextual Info: STV160NF02L N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02L • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0025 Ω 160 A TYPICAL RDS(on) = 0.0016 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

STV160NF02LA

Contextual Info: STV160NF02LA N-CHANNEL 20V - 0.0018Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF02LA • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0027 Ω 160 A TYPICAL RDS(on) = 0.0018 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING

Contextual Info: シングル N チャンネル MOSFET ELM32420LA-S •概要 ■特長 ELM32420LA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=45A ・ Rds on < 14mΩ (Vgs=5V) ・ Rds(on) < 26mΩ (Vgs=2.5V)

Contextual Info: Single P-channel MOSFET ELM321504A-S •General description ■Features ELM321504A-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-45A Rds(on) < 15mΩ (Vgs=-10V) Rds(on) < 29mΩ (Vgs=-4.5V)