MOSFET 2057 Search Results

46343

Abstract: 4634 2SK1839
Contextual Info: Ordering number:EN4634 N-Channel Enhancement Silicon MOSFET 2SK1839 Analog Switch Applications Package Dimensions unit:mm 2057A [2SK1839] 0.3 0.15 0.2 • Ultrasmall-sized package permitting 2SK1839applied sets to be made small and slim. · Largeyfs.

2SK1067

Abstract: EN2719
Contextual Info: Ordering number:EN2719 N-Channel Silicon MOSFET 2SK1067 FM Tuner, VHF-Band Amplifier Applications Package Dimensions unit:mm 2057 0.3 0.15 0.2 [2SK1067] 3 0 to 0.1 0.425 2.1 1.250 • Low noise NF=1.8dB typ f=100MHz . · High power gain PG=27dB typ (f=100MHz).

TUSB2040

Contextual Info: TPS2045A, TPS2046A TPS2047A, TPS2048A, TPS2055A TPS2056A, TPS2057A, TPS2058A www.ti.com SLVS251C – SEPTEMBER 2000 – REVISED JANUARY 2008 CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES FEATURES 1 • • • • • • • • • • • 80-mΩ High-Side MOSFET Switch

TF WIRE

Abstract: vmm 90-09f ZY180L ZY180R
Contextual Info: Advanced Technical Information VMM 90-09F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 900 V = 85 A = 76 mW Phaseleg Configuration Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C TC = 80°C

Contextual Info: SD2931-12MR 150 W – 50 V moisture resistant HF/VHF DMOS transistor Datasheet - production data Description The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V DC large

Contextual Info: Advanced Technical Information VMM 90-09F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 900 V = 85 A Ω = 76 mΩ Phaseleg Configuration Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 900 V ±20 V ID25 ID80 TC = 25°C

UL758

Contextual Info: VMM 650-01F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 100 V = 680 A Ω = 1.8 mΩ Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 100 V ±20 V ID25 ID80 TC = 25°C TC = 80°C

Contextual Info: VMM 650-01F Dual Power HiPerFETTM Module VDSS = 100 V ID25 = 680 A Ω RDS on = 1.8 mΩ Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ¬ ¬ ¬ ¬ ID25 ID80 TC = 25°C TC = 80°C

ZY180L

Abstract: ZY180R 650-01F UL758 VMM 650-01F
Contextual Info: VMM 650-01F Dual Power HiPerFETTM Module VDSS = 100 V ID25 = 680 A RDS on = 1.8 mW Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 100 V ±20 V ID25 ID80 TC = 25°C TC = 80°C ① ①

VO1263

Abstract: HOW TO DRIVE SSR USING MOSFET DRIVER phototriac Spice triac spice model IN5235B j177 model J177 equivalent photovoltaic mosfet driver spice model solid state relay sSR spice model
Contextual Info: Vishay Semiconductors SSR Design Using VO1263 Introduction Solid State Relay SSR is a semiconductor device that can be used in place of mechanical relay to switch electricity to a load in many applications. SSRs are purely electronic and normally composed of a low

IN5235B

Abstract: solid state relay spice model VO1263 sSR spice model spice model solid state relay phototriac Spice spice model TRIAC OUTPUT OPTOCOUPLER arcing spice model J177 equivalent 1N5235B spice model
Contextual Info: Vishay Semiconductors SSR Design Using VO1263 Introduction Solid State Relay SSR is a semiconductor device that can be used in place of mechanical relay to switch electricity to a load in many applications. SSRs are purely electronic and normally composed of a low

Application Note 60

Abstract: spice model TRIAC OUTPUT OPTOCOUPLER phototransistor spice model phototriac Spice sSR spice model spice model solid state relay IN5235 mosfet dc switch arcing spice model exercise "P-Channel JFET"
Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers Application Note 60 SSR Design Using VO1263 INTRODUCTION A solid state relay SSR is a semiconductor device that can be used in place of a mechanical relay in many applications to switch electricity to a load. SSRs are purely electronic and

Contextual Info: DEMO MANUAL DC2057A LTC3638EMSE High Efficiency, High VIN, 250mA Step-Down Converter DESCRIPTION Demonstration circuit 2057A is a high input voltage, 250mA output DC/DC power supply featuring the LTC 3638. The IC operates with high efficiency Burst Mode® operation

Contextual Info: bq2057, bq2057C bq2057T, bq2057W SLUS025F − MAY 2001 − REVISED JULY 2002 ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLEĆ AND TWOĆCELL LITHIUMĆION AND LITHIUMĆPOLYMER FEATURES D Ideal for Single 4.1 V or 4.2 V and Dual-Cell D D D D D D D D D D D

Contextual Info: bq2057, bq2057C bq2057T, bq2057W SLUS025F − MAY 2001 − REVISED JULY 2002 ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLEĆ AND TWOĆCELL LITHIUMĆION AND LITHIUMĆPOLYMER FEATURES D Ideal for Single 4.1 V or 4.2 V and Dual-Cell D D D D D D D D D D D

Contextual Info: bq2057, bq2057C bq2057T, bq2057W SLUS025F − MAY 2001 − REVISED JULY 2002 ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLEĆ AND TWOĆCELL LITHIUMĆION AND LITHIUMĆPOLYMER FEATURES D Ideal for Single 4.1 V or 4.2 V and Dual-Cell D D D D D D D D D D D

intel 845 MOTHERBOARD pcb CIRCUIT diagram

Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
Contextual Info: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete

newark

Abstract: Nebraska Dy-Tronix S1912 1-800-4NEWARK 1-800-4-NEWARK 1-800-56SONIC
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 POWEREX WORLDWIDE POWER SEMICONDUCTOR SALES AND MARKETING HEADQUARTERS USA - INTERNATIONAL Youngwood, Pennsylvania Powerex, Inc. 200 Hillis Street Youngwood, PA 15697-1800

MIL-STD-750E

Abstract: 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES

transistors IGBT

Abstract: 4221 transistor datasheet igbt testing
Contextual Info: EXPERIENCE RELIABILITY Powerex has Group A, B and C testing capabilities allowing for efficient evaluation of customer-defined specifications Global Power-Semiconductor Solution Provider On the Leading Edge of Research and Manufacturing Technology Powerex High Reliability Testing Experience Includes:

4005A

Abstract: mosfet induction heater T4 3560 welding rectifier D-68623
Contextual Info: VBH 40-05A Advanced Technical Information Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V Ω RDSon = 116 mΩ VRRM = 1200 V IDAV25 = 90 A Application Mains Rectifier Bridge D1 - D4 Symbol Conditions Maximum Ratings VRRM

ixys VBH 40-05B

Abstract: mosfet induction heater D-68623 T4 3560 80c40
Contextual Info: VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V Ω RDSon = 116 mΩ Preliminary VRRM = 1200 V IDAV25 = 90 A Mains Rectifier Bridge D1 - D4 Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A