MOSFET 14A 400V Search Results

application IRFP450

Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
Contextual Info: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

p14nk50zfp

Abstract: P14NK50Z
Contextual Info: STP14NK50Z - STP14NK50ZFP STB14NK50Z-STB14NK50Z-1-STW14NK50Z N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK50Z 500V <0.38Ω 14A 150W 1 STP14NK50ZFP 500V

W14NK50Z

Abstract: p14nk50zfp p14nk50z B14NK50Z w14nk50 P14NK50 st w14nk50z STP14NK50ZFP Part Marking TO-220 STMicroelectronics STW14NK50Z
Contextual Info: STP14NK50Z - STP14NK50ZFP STB14NK50Z-STB14NK50Z-1-STW14NK50Z N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK50Z 500V <0.38Ω 14A 150W 3 1 STP14NK50ZFP 500V

datasheet irfp450 mosfet

Abstract: rectifier d 355 n 2000 IRFP450 TA17435 TB334
Contextual Info: IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 • 14A, 500V • rDS ON = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

MIL-PRF-19500/592

Abstract: IRFN350 JANTX2N7227U JANTXV2N7227U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD - 91551C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

IRFM350

Abstract: JANTX2N7227 JANTXV2N7227
Contextual Info: PD - 90491D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

Contextual Info: PD-91551D POWER MOSFET SURFACE MOUNT SMD-1 IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

MIL-PRF-19500/592

Abstract: MOSFET 150 N IRF IRFN350 JANTX2N7227U JANTXV2N7227U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD-91551D POWER MOSFET SURFACE MOUNT SMD-1 IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

P15NK50

Abstract: STW15NK50
Contextual Info: STP15NK50Z/FP - STB15NK50Z STB15NK50Z-1 - STW15NK50Z N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STP15NK50Z 500V <0.34Ω 14A 160 W 1 STP15NK50ZFP 500V <0.34Ω

P15NK50

Abstract: B15NK50Z P15NK50ZFP w15nk50 w15nk50z p15nk50z P15N STB15NK50Z STB15NK50Z-1 B15NK50
Contextual Info: STP15NK50Z/FP - STB15NK50Z STB15NK50Z-1 - STW15NK50Z N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STP15NK50Z 500V <0.34Ω 14A 160 W 3 1 STP15NK50ZFP 500V <0.34Ω

w15nk50z

Abstract: P15NK50ZFP B15NK50Z zener diode 3.0 b2 p15nk50z P15NK50 ZENER DIODE STMicroelectronics DIODE marking code STMicroelectronics marking code date diode Zener Diode B1 2
Contextual Info: STP15NK50Z/FP - STB15NK50Z STB15NK50Z-1 - STW15NK50Z N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STP15NK50Z 500V <0.34Ω 14A 160 W 3 1 STP15NK50ZFP 500V <0.34Ω

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 14N40K-MT Preliminary Power MOSFET 14A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N40K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 14N40K-MT Preliminary Power MOSFET 14A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 14N40K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

MOSFET DRIVER circuits

Contextual Info: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

700v 5A mosfet

Abstract: FS3UM-14A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS3UM-14A HIGH-SPEED SWITCHING USE FS3UM-14A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

65w 20v smps

Abstract: FS2UM-14A 1A 700V MOSFET
Contextual Info: MITSUBISHI Nch POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE FS2UM-14A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

MOSFET 700V 10A

Abstract: FS5UM-14A MOSFET 700V TO 220
Contextual Info: MITSUBISHI Nch POWER MOSFET FS5UM-14A HIGH-SPEED SWITCHING USE FS5UM-14A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

FS3SM-14A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS3SM-14A HIGH-SPEED SWITCHING USE FS3SM-14A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

smps 200w 20V

Abstract: FS14SM-14A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS14SM-14A HIGH-SPEED SWITCHING USE FS14SM-14A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

FS18SM-14A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS18SM-14A HIGH-SPEED SWITCHING USE FS18SM-14A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

FS5SM-14A

Abstract: mosfet 600v
Contextual Info: MITSUBISHI Nch POWER MOSFET FS5SM-14A HIGH-SPEED SWITCHING USE FS5SM-14A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

FS7SM-14A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS7SM-14A HIGH-SPEED SWITCHING USE FS7SM-14A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

MOSFET 700V 10A

Abstract: 700v 5A mosfet FS10SM-14A
Contextual Info: MITSUBISHI Nch POWER MOSFET FS10SM-14A HIGH-SPEED SWITCHING USE FS10SM-14A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V

FS7UM-14A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS7UM-14A HIGH-SPEED SWITCHING USE FS7UM-14A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V