MOSFET 12A 600V Search Results

FS10KM-12A

Abstract: fs10km 200v 5A mosfet power Diode 400V 20A mosfet 10a 600v
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KM-12A FS10KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

FS14KM-12A

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS14KM-12A FS14KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS14KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

mosfet 12A 600V

Abstract: MOSFET 600V 7A smps inverter circuit FL14KM-12A
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FL14KM-12A FL14KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FL14KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

FS2KM-12A

Abstract: FS2KM
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS2KM-12A FS2KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS2KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2

FS7KM-12A

Abstract: FS7KM12 FS7KM
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS7KM-12A FS7KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS7KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2

FS4KM-12A

Abstract: fs4km12a fs4km
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS4KM-12A FS4KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS4KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2

Contextual Info: MITSUBISHI Neh POWER MOSFET FL7KM-12A HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 à • 10V DRIVE • V d s s . 600V rD S ON ( M A X ) . 1 .3D.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

FS22SM-12A

Abstract: POWER MOSFET 4600
Contextual Info: MITSUBISHI Nch POWER MOSFET FS22SM-12A HIGH-SPEED SWITCHING USE FS22SM-12A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 20.0 5.0 ➃ 4 2 f 3.2 2 19.5MIN. 1.0 ➀ ➁ 4.4 ➂ 5.45 5.45 0.6 2.8 4 ➁➃ ● 10V DRIVE ● VDSS . 600V

12N60l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

12N60L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

UTC12N60

Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

R6012AN

Contextual Info: R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

r6012anx

Contextual Info: R6012ANX R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6012FNJ Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R6012ANX

Contextual Info: R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

AOTF12N60

Abstract: AOT12N60 VDS-100V AOTF12
Contextual Info: AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description Features The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

AOTF12N60

Abstract: AOT12N60 AOT4N60
Contextual Info: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOW12N60 & AOWF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

Contextual Info: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: MITSUBISHI Nch POWER MOSFET FL12KM-12A •§;> >>•+. :W> ^ »ft fin*' slljü \e cl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FL12KM-12A OUTLINE DRAWING Dim ensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 600V

AOTF12N60L

Abstract: AOT12N60 AOTF12N60
Contextual Info: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.