MOSFET 016N03LS Search Results

MOSFET 016N03LS Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TCK424G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet
TCK420G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK425G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet

MOSFET 016N03LS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
016N03LS Abstract: Mosfet 016n03ls BSC016N03LS IEC61249-2-21 JESD22 bsc016n03l BSC016N03LS G BSC016N03LSG Contextual Info: BSC016N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 1.6 mΩ ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8	Original	BSC016N03LS IEC61249-2-21 016N03LS 016N03LS Mosfet 016n03ls IEC61249-2-21 JESD22 bsc016n03l BSC016N03LS G BSC016N03LSG	PDF
Contextual Info: BSC016N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 1.6 mΩ ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8	Original	BSC016N03LS IEC61249-2-21 016N03LS	PDF
016n03ls Abstract: BSC016N03LSG Contextual Info: BSC016N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 1.6 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel	Original	BSC016N03LS 016N03LS 016n03ls BSC016N03LSG	PDF
016N03ls Abstract: BSC016N03LS JESD22 A 104 j PG-TDSON-8 BSC016N03LSG Contextual Info: BSC016N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 1.6 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel	Original	BSC016N03LS 016N03LS 016N03ls JESD22 A 104 j PG-TDSON-8 BSC016N03LSG	PDF
016n03ls Abstract: Mosfet 016n03ls BSC016N03LSG Contextual Info: BSC016N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 1.6 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel	Original	BSC016N03LS 016N03LS 016n03ls Mosfet 016n03ls BSC016N03LSG	PDF