MOS TECHNOLOGY Search Results

pa1556ah

Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

NE5500434

Abstract: nec RF package SOT89 nec 2501
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our MOS technology our 0.6 m WSi gate lateral MOS

Contextual Info: POWER MOS FET New-Product Lineup New-Product Series Our original technology has improved the performance of the conventional 7^MOS series. L2-;r-MOS IV, V Low-voltage Series •••Low-voltage drive (4V), ultralow on-resistance tt-MOS II*5, III'5, IV (High-voltage Series)*"Low on-resistance, large current, high voltage

power bjt advantages and disadvantages

Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
Contextual Info: Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in

Contextual Info: Preliminary Datasheet R2J20658BNP R07DS0550EJ0101 Previous No.: R07DS0542EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver

Contextual Info: Preliminary Datasheet R2J20658BNP R07DS0550EJ0101 Previous No.: R07DS0542EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver

Contextual Info: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: NJU7043 Input/Output Full-Swing High Output Current Dual C-MOS Operational Amplifier •GNERAL DESCRIPTION The NJU7043 is a dual C-MOS operational amplifier permitting a full-swing input and output in under high load. Based on C-MOS technology, there are excellent features

Contextual Info: NJU7043SCC Input/Output Full-Swing High Output Current Dual C-MOS Operational Amplifier •GENERAL DESCRIPTION The NJU7043 is a dual C-MOS operational amplifier permitting a full-swing input and output in under high load. Based on C-MOS technology, there are excellent features

APT6015JVFR

Contextual Info: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS

Contextual Info: Preliminary Datasheet R2J20655BNP R07DS0548EJ0101 Previous No.: R07DS0540EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver

APT10050LVR

Contextual Info: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10086BVR

Contextual Info: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT12045L2VFR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT12080LVR

Abstract: 1200v diode
Contextual Info: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1001RSVR

Contextual Info: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

fet series

Abstract: fet book
Contextual Info:  MOS FET Series .04
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'&5 Panasonic’s MOS FET Series open the new dimension of applications. Panasonic MOS FET series facilitate the industry-top-level process technology. Panasonic adds to a rich MOS FET portfolio which includes composite and high tolerance in smaller package types.

Contextual Info: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10086SVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®