MOS FET VDS 120V Search Results

SDK09

Contextual Info: Surface-mount MOS FET Array SDK09 under development • ID — VDS Characteristics 0.15 0.2 400 130 30 VDS=10V f=1.0MHz VGS=0V ID=4A VDD=12V RL=3Ω VGS=5V RG=50Ω 100 300 250 200 1.0 ISD=6A, VGS=0V V µA µA V S 0.2 0.25 Ω ■ ID — VGS Characteristics

STA508A

Abstract: LF412
Contextual Info: MOS FET Array STA508A • ID — VDS Characteristics VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω ISD = 6A, VGS = 0V 0.2 0.25 1.5 ■ ID — VGS Characteristics ±0.5 C1.5 1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S a Type No.

Contextual Info: MOS FET Array STA508A • ID — VDS Characteristics VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω ISD = 6A, VGS = 0V 0.2 0.25 1.5 ■ ID — VGS Characteristics 16 C1.5 1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S a Part No. b) Lot No.

Contextual Info: MOS FET Array STA508A • ID — VDS Characteristics VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω ISD = 6A, VGS = 0V 0.2 0.25 1.5 ■ ID — VGS Characteristics 16 ±0.5 C1.5 1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S a Part No.

SKP253

Abstract: 051124 mos fet 120v 10A sanken power transistor B105 CF35
Contextual Info: MOS FET SKP253 December 2005 •Package-TO-263 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings

Package-FM20

Abstract: fkp*253 FKP253 fet t02
Contextual Info: N-Channel MOS FET FKP253 •Features June, 2007 ■Package-FM20 TO220 Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1)

FKP253

Abstract: Package-FM20 mos n fet e sanken power transistor B105 CF35 FM20 DC switching 60V 10A FET
Contextual Info: N-Channel MOS FET FKP253 •Features June, 2007 ■Package-FM20 TO220 Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1)

Contextual Info: MOS FET SKP253 December 2005 •Package-TO-263 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings

Contextual Info: MOS FET SKP253 December 2005 •Package-TO-263 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings

Contextual Info: MOS FET SKP253 December 2005 Package-TO-263 Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed Applications • PDP driving • High speed switching Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings

fkp253

Contextual Info: N-Channel MOS FET FKP253 June, 2007 Features Package-FM20 TO220 Full Mold Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SK3526-01L

Contextual Info: 2SK3526-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3512-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

2SK3650-01L

Contextual Info: 2SK3650-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

2SK3592-01L

Abstract: n-channel, 75v, 40a
Contextual Info: 2SK3592-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: 2SK3604-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

Contextual Info: MP4410 TOSHIBA TO SHIBA POWER MOS FET M O D U LE SILICON N CHANN EL MOS TYPE L2-? r-M O S V 4 IN 1 M P4 4 1 0 HIGH POWER, HIGH SPEED SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE A N D INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm SW ITCHING

Sj 35 diode

Contextual Info: / 2SK3512-01L,S,SJ Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

MP4403

Abstract: mp44
Contextual Info: TOSHIBA MP4403 TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2- tt-M OSIV 4 IN 1 MP4 4 0 3 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. • 4-Volt Gate Drive Available Small Package by Full Molding (SIP 12 Pin)

2am smd transistor

Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Contextual Info: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels

MP4401

Abstract: T120 Switch
Contextual Info: MP4401 TO SH IBA TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-7r-MOSlII 4 IN 1 M P4 4 0 1 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. • 4-Volt Gate Drive Available Small Package by Full Molding (SIP 12 Pin)

SMA2409M

Abstract: spf 9001 sanken mn638s SPF0001 SPF3004 SPF3006 relay Re 04501 Ignition ICs SPF7211 ssd103
Contextual Info: SANKEN ELECTRIC CO.,LTD. CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein