MOS FET UHF LOW POWER Search Results

Contextual Info: HITACHI PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 3rd. Edition December, 1996 Features • Small package: 30 x 10 x 5.9mm • Low operation voltage: 7W at 7.2V

3SK196

Abstract: Marking G1s
Contextual Info: H ITACH I 3SK196-Silicon N Channel Dual Gate MOS FET VHF/UHF TV Tuner RF Amplifier Features MPAK-4 • Compact package. • Low noise amplifier for VHF to UHF band, capable of RF amplifier for CATV wide band tuner. 2 Table 1 Absolute Maximum Ratings

3SK196

Abstract: mos fet uhf low power NF 028
Contextual Info: 3SK196 Silicon N Channel Dual Gate MOS FET VHF/UHF TV Tuner RF Amplifier Features MPAK-4 • Compact package. • Low noise amplifier for VHF to UHF band, capable of RF amplifier for CATV wide band tuner. 2 Table 1 Absolute Maximum Ratings Ta = 25°C Item

PF0348

Abstract: PF0349 PF0350 PF0351 PF0352 PF0353 Hitachi DSA0046
Contextual Info: PF0348 Series MOS FET Power Amplifier Module for UHF Band ADE-208-343C Z 4th. Edition December, 1996 Features • Small package:30 x 10 × 5.9mm • Low operation voltage: 7W at 7.2V • Low power control current: 200µA Typ Ordering Infomation Type. name

Load VSWR tolerance

Abstract: PF0350 PF0348 PF0349 PF0351 PF0352 PF0353 ADE-208-343C 68w fet Hitachi DSA00304
Contextual Info: PF0348 Series MOS FET Power Amplifier Module for UHF Band ADE-208-343C Z 3rd. Edition December, 1996 Features • Small package:30 x 10 × 5.9mm • Low operation voltage: 7W at 7.2V • Low power control current: 200µA Typ Ordering Infomation Type. name

Contextual Info: PF0341A Series MOS FET Power Amplifier Module for UHF Band HITACHI Features • Small package: 30 x 10 x 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 ¡lA Typ Ordering Information Type Name Operating Frequency

Contextual Info: PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 4th Edition December 1996 Features • Small package: 30 x 10 x 5.9 mm • Low operation voltage: 7 W at 7.2 V • Low power control current: 200 ¡lA Typ Ordering Information

PF0350

Abstract: Hitachi DSA0096 PF0348 PF0349 PF0351 PF0352 PF0353
Contextual Info: PF0348 Series MOS FET Power Amplifier Module for UHF Band ADE-208-343C Z 4th Edition December 1996 Features • Small package: 30 x 10 × 5.9 mm • Low operation voltage: 7 W at 7.2 V • Low power control current: 200 µA Typ Ordering Information Type Name

Hitachi DSA002759

Contextual Info: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline 3SK297 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA002759

Contextual Info: 3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline 3SK298 Absolute Maximum Ratings Ta = 25°C

3SK318

Abstract: DSA003643
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK235

Contextual Info: HITACHI 3SK235-Silicon N Channel Dual Gate MOS FET UHF/VHF TV Tuner RF Amplifier Features MPAK-4 • Low voltage operation. • High gain, low noise. Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Drain to source voltage VDS

3SK319

Abstract: Hitachi DSA002759
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

marking is "yb-"

Abstract: Hitachi DSA002759
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK319

Abstract: ADE-208-602 DSA003643
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK319

Abstract: ADE-208-602 Hitachi DSA00395
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

PF0340A

Abstract: BL01RN1-A62 MURATA MW 20 PF0341A PF0342A PF0343A PF0344A PF0345A Hitachi DSA00221 Hitachi DSA00221025
Contextual Info: PF0341A Series MOS FET Power Amplifier Module for UHF Band ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information

3SK143

Contextual Info: High Frequency FETs 3SK143 Silicon N-Channel 4-pin MOS FET For UHF high-gain and low-noise amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic

PF0340A

Abstract: PF0343A Hitachi DSA0096 BL01RN1-A62 PF0341A PF0342A PF0344A PF0345A PF034
Contextual Info: PF0341A Series MOS FET Power Amplifier Module for UHF Band ADE-208-338C Z 4th Edition July 1996 Features • Small package: 30 x 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information

PF0340A

Abstract: PF0341A PF0342A BL01RN1-A62 PF0343A PF0344A PF0345A Hitachi DSA00311
Contextual Info: PF0341A Series MOS FET Power Amplifier Module for UHF Band ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 × 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 µA Typ Ordering Information

bl01rn1-a62-001

Abstract: BL01RN1-A62
Contextual Info: HITACHI PF0341A Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 x 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 |iA Typ

3SK296ZQ-TL-E

Abstract: 3SK296 3sk296zq SC82A
Contextual Info: 3SK296 Silicon N-Channel Dual Gate MOS FET REJ03G0815-0300 Previous ADE-208-388A Rev.3.00 Aug.10.2005 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline RENESAS Package code: PTSP0004ZA-A

Hitachi DSA002759

Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline

Hitachi DSA002759

Contextual Info: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline 3SK295 Absolute Maximum Ratings Ta = 25°C Item Symbol