MOS CONTROLLED THYRISTOR Search Results

SMCTTA32N14A10

Abstract: TA32N14A10
Contextual Info: SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid.

TA65N14A10

Abstract: 1E21 MCT thyristor SMCTTA65N14A10 RG-47
Contextual Info: SMCT TA65N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area

AA32N14A10

Abstract: MOS-Controlled Thyristor Solidtron aa32n14 RG47 SMCTAA32N14A10 RG-47 SCR 3KA 02uF edis
Contextual Info: SMCT AA32N14A10 Advanced Pulse Power Device N-MOS VCS, TO-247 Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five leaded TO247 plastic package. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with

NTE5457

Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be

Contextual Info: H ^ r tm ^ s • « / < S e m ico n d ucto r mm M m m T 3 5 P 6 F 1 D \ 35A, 600V P-Type MOS Controlled hyristor MCT with Anti-Parallel Diode W tH O B ^ o E S IG N S - ApriM99n V r r : ^ S S OBSOLi ! i - - — 1 Package Featuw§ • 35A ,-6 00V JEDEC STYLE TO-247

Q4010LS2

Abstract: BJT amplifiers BJT IC Vce red laser pointer bipolar junction transistor Q4015L5 laser diode mosfet triggering circuit MC14007 Photo resistor bjt ic operational amplifier
Contextual Info: EE 330 Laboratory 9 Semiconductor Parameter Measurement and Thyristor Applications Spring 2011 Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second

NTE5629

Contextual Info: NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

BT168 Series

Abstract: BT134W BT151 BT168 BT168W BT169 BT169W pin configuration of BT169
Contextual Info: Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB applications GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in Residual Current Devices/ Ground Fault Interrupters/

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

2N6784

Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Contextual Info: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds

Contextual Info: HIP2030 HARRIS SEMICONDUCTOR 30V MCT/IGBT Gate Driver March 1995 Features Description • ± Polarity Gate Drive The HIP2030 is a medium voltage integrated circuit MVIC capable of driving large capacitive loads at high voltage slew rates (dv/dts). This device is optimized for driving 60nF of

Difference between LS, HC, HCT devices

Abstract: TC4S69F Small Signal Zener Diod difference between 74ls and 74hc ic TC74HC04
Contextual Info: C2MOS Logic TC74HC/HCT Series 9. Precautions in Designing Circuits 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high impedance that the logic level becomes undefined under open conditions. If the input is at an intermediate level, the P-channel and Nchannel transistors both turn on, and excessive supply

74AC series

Abstract: POM-n
Contextual Info: 9 P R E C A U T IO N S IN D E S IG N IN G C IR C U IT S 9-1 Input Processing 1 Processing of unused gates. Inputs of CMOS IC have such a high im pedance th at the logic level becom es undefined under open conditions. If the input is a t an interm ediate level, the P -channel and N -channel transistors both turn

CIRCUITS-13

Contextual Info: 9. PRECAUTIONS IN DESIGNING CIRCUITS 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high im pedance th at th e logic level becom es undefined under open conditions. If th e input is a t an interm ediate level, the P-channel and N-channel transistors both tu rn on, and excessive supply cu rren t flows.

sfh817a

Abstract: 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter
Contextual Info: TND401/D Rev. 2, September 2010 300 W High Performance SLIM LCD TV Power Solution Jean-Paul Louvel LCD TV System Applications 2010 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated

SCHEMATIC WITH IGBTS

Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
Contextual Info: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high

IBJT

Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
Contextual Info: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but

mosfet to ignition coil

Abstract: scr speed control dc motor thyristor drive dc motor speed control AN7332 CR8 thyristor equivalent thyristor motor speed control circuit thyristor family scr driver dc motor speed control mosfet structure Ignition Transformer
Contextual Info: Harris Semiconductor No. AN7332.1 Harris Power MOSFETs May 1992 The Application Of Conductivity-Modulated Field-Effect Transistors Author: Jack Wojslawowicz Summary The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer

schematic diagram 120v ballast

Abstract: ELECTRONIC BALLAST 36W circuit diagram fluorescent lamp starter circuit diagram electronic ballast for 36W tube 50Hz to 60Hz 115v circuit diagram circuit diagram electronic ballast for 18W 4 pin EFS 600 EN55015 driver fluorescent tube starter capacitor required in electromagnetic pulse generator kit
Contextual Info: EFS  STARLIGHT-KIT Application Specific Discretes 2-CHIPS SET FOR FLUORESCENT LAMP STARTER A.S.D. FEATURES n n n n n n n VERY WIDE TEMPERATURE RANGE: tube ignition from - 30 to + 85 °C SINGLE SHOT IGNITION FROM -30 to 0°C : 350mA, 1350V striking pulse

fluorescent lamp starter

Abstract: working of fused tube light using diodes 36 led lamp 230v circuit diagram circuit diagram electronic ballast for 36W tube capacitor discharge ignition scr led lamp 230v circuit diagram circuit diagram electronic ballast for 18W 4 pin Electronic ballast 58W Fluorescent BALLAST low loss ELECTRONIC BALLAST 18W SCHEMATIC
Contextual Info: EFS  STARLIGHT-KIT 2-CHIPS SET Application Specific Discretes FOR FLUORESCENT LAMP STARTER A.S.D. FEATURES n n n n n n n VERY WIDE TEMPERATURE RANGE: tube ignition from - 30 to + 85 °C SINGLE SHOT IGNITION FROM -30 to 0°C : 350mA, 1350V striking pulse

D3157

Abstract: TLC2652 TLC2652AMJ TLC2652AMJG TLC2652MJ TLC2652MJG TLC2654AM TLC2654M
Contextual Info: TLC2652M, TLC2652AM Advanced LinCMOS PRECISION CHOPPER-STABILIZED OPERATIONAL AMPLIFIERS SGLS048 – SEPTEMBER 1988 – REVISED OCTOBER 1991 JG PACKAGE TOP VIEW available features • • • • • • • • Extremely Low Offset Voltage . . . 1 µV Max

3 phase smps circuit diagram

Abstract: SMPS CIRCUIT DIAGRAM and working K2102 IL44608N MCR22 TL431 120 VAC to DC smps circuit diagram IL44 smps control ic with 7 pin TOP
Contextual Info: TECHNICAL DATA External Components Reliable and Flexible SMPS Controller DESCRIPTION The IL44608N is a high performance voltage mode controller designed for off–line converters. This high voltage circuit that integrates the start–up current source and the oscillator capacitor, requires few external components

sn76131

Abstract: sn76670 uA703 ua702 Fairchild dtl catalog ca3458 UA703 equivalent UA740 703HC lm741
Contextual Info: FAIRCHILD SEMICONDUCTOR THE LINEAR INTE INTRODUCTION NUMERICAL INDEX OPERATIONAL AMPLIFIERS COMPARATORS Each Product Sectio n Contains The Follow ing Categories O rganized By Function Index Selection Guide Data Sh e e ts G lo ssary VOLTAGE REGULATORS COMPUTER/INTERFACE