GT30J110SRA
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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XPH13016MC
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Toshiba Electronic Devices & Storage Corporation
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P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) |
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TK055U60Z1
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET x 2, 600 V, 40 A, 0.046 Ω@10V, TOLL |
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XPH8R316MC
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Toshiba Electronic Devices & Storage Corporation
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P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) |
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SSM14N956L
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET x 2, 12 V, 20 A, 0.001 Ω@4.5V, TCSPED-302701 |
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TPH3R10AQM
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) |
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